DSA003720
Abstract: No abstract text available
Text: SILICON PLANAR HIGH SPEED SWITCHING DIODES HD2A HD3A HD4A I 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE VR IF Continuous Reverse Voltage Forward Current UNIT 75 V 100 mA mW Power Dissipation at T amb = 25°C P T O T 330 Operating and Storage Temperature Range
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Abstract: No abstract text available
Text: DSEI2X161-02A Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition)75# Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current V(RRM) (V) Rep.Pk.Rev. Voltage t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)
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DSEI2X161-02A
StyleSOT-227B
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Untitled
Abstract: No abstract text available
Text: PA89PA89 • PA89A • PA89A P r o d u c t IPA89A Innnnoovvaa t i o n FFr roomm PA89, High Voltage Power Operational Amplifiers FEATURES • 1140V P-P SIGNAL OUTPUT • WIDE SUPPLY RANGE — ±75V to ±600V • Programmable CURRENT LIMIT • 75 mA CONTINUOUS OUTPUT CURRENT
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IPA89A
PA89A
PA89A
MO-127
PA89U
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Untitled
Abstract: No abstract text available
Text: HD1707 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current80m V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time20n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)100m
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HD1707
Current80m
Voltage50
Time20n
Current25u
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Untitled
Abstract: No abstract text available
Text: HD1706 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current80m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time15n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)100m
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HD1706
Current80m
Voltage80
Time15n
Current25u
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Untitled
Abstract: No abstract text available
Text: BAS32L Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)5.0m
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BAS32L
Current200m
Voltage75
Current100u
StyleSOD-80
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AAAQ
Abstract: N2 SOT23-6 mosfet n3 MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA
Text: 19-1262; Rev 0; 3/98 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
AAAQ
N2 SOT23-6
mosfet n3
MAX4529CPA
MAX4529CSA
MAX4529CUA
MAX4529CUT-T
MAX4529EPA
MAX4529ESA
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Untitled
Abstract: No abstract text available
Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
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MAX4529
Abstract: MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T N2 SOT23-6
Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
MAX4529CPA
MAX4529CSA
MAX4529CUA
MAX4529CUT-T
MAX4529EPA
MAX4529ESA
MAX4529EUA
MAX4529EUT-T
N2 SOT23-6
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IC Analog Switch Chip
Abstract: MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T
Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
IC Analog Switch Chip
MAX4529CPA
MAX4529CSA
MAX4529CUA
MAX4529CUT-T
MAX4529EPA
MAX4529ESA
MAX4529EUA
MAX4529EUT-T
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diode G21
Abstract: FD4A G22 diode LD4RA LD4A SD15 switching diode g21 DIODE diode G23
Text: ELECTRICAL CHARACTERISTICS SINGLE HIGH VOLTAGE SWITCHING DIODE Forward Voltage V Dice Type HD3A rw m Max. vF Reverse Current T Ir @ lF Max. @ rr * VR Max. V V mA hA V ns 75 1.2 110 1 75 6 Geometry G19 DUAL HIGH VOLTAGE SWITCHING DIODE V Dice Type HD2A Forward Voltage
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Untitled
Abstract: No abstract text available
Text: OM6OL6OSB OM50F60SB Prelim inary Data Sheet OM45L120SB OM35F12QSB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES |o _ o i © © High Current, High Voltage 60 0V And 1200V. Up To 75 A m p IG B T s With F R E D Diodes FEATURES • • • • •
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OM50F60SB
OM45L120SB
OM35F12QSB
60L60SB
45L120SB
50F60SB
35F120SB
45L120SB
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diode b32
Abstract: b32 diode BAS21 dual COMMON cathode low leakage diodes DIODE b32 01
Text: 5bE D I TÎ7057Ô 0007053 b32 « Z E T B SEMICONDUCTOR DICE SWITCHING DIODES Dice type BAS21 Description High voltage single diode "V- o \ " 0 5 ^ ZETEX SEMICONDUCTORS Trr V BR v F Min. Max. at Volts Volts mA HA Volts 250 1.0 100 0.1 200 50* G 24 1.0 75
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BAS21
100S2
100il,
diode b32
b32 diode
dual COMMON cathode
low leakage diodes
DIODE b32 01
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B0004
Abstract: CDSV3-16-G CDSV3-56-G CDSV3-70-G CDSV3-99-G v50s
Text: COAICHII* Small Signal Switching Diodes CDSV3-99-G/ 70-G/ 5 6 -G /16G % Reverse Voltage: 75 Volts Forward Current: 200mA RoHS Device Features SO T-323 D es ig n ed fo r m ounting on sm all s urfa ce . High s p eed sw itching. 0.059 1.80 High m ounting cap ab ility, strong surge
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CDSV3-99-G/
56-G/16G
200mA
OT-323,
MIL-STD-750,
CDSV3-16-G
CDSV3-99-G
CDSV3-70-G
CDSV3-56-G
OT-323
B0004
CDSV3-56-G
v50s
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CIL 1302
Abstract: cil 1305
Text: T E L E D Y N E COMPONENTS a*U7fe.aa ÜOÜbt.75 3 EflE D ECONOMY LINE CURRENT REGULATOR FIELD EFFECT DIODES XCTP1U AiC CIL-1300 thru CIL-1305 c m • CURRENT CONSTANT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • CONNECT IN PARALLEL FOR HIGHER CURRENT
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CIL-1300
CIL-1305
CIL 1302
cil 1305
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Untitled
Abstract: No abstract text available
Text: BAS28 y V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icrominiature envelope intended fo r surface mounting. It concerns fast-switching general-purpose diodes. Q UICK REFERENCE D A T A VR max. 75 V Repetitive peak reverse voltage
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BAS28
BAS28
BAW62;
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BAW62
Abstract: FR 309 diode
Text: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage
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BAW62
BAW62
EAVV62
FR 309 diode
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1N4000 silicon diodes
Abstract: 1N4000 - 1N4007 1n4000 1n4000 a 1n4007
Text: 1N4001 . 1N4007 BY133. P513 FA G O R^ 1Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.600 V. Ï ! to ; 1— il_ o\ Ç.35 58.5 Current 1.0 A. at 75°C. a t r0 .2 0.5 • Low cost • Diffused junction • High current capability
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1N4001
1N4007
BY133.
DO-15
1N4000
1N4000 silicon diodes
1N4000 - 1N4007
1n4000 a 1n4007
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T-75 A HIGH VOLTAGE DIODES
Abstract: ultraFast Recovery Bridge Rectifier fast recovery bridge rectifier BRIDGE RECTIFIERS full wave bridge rectifier Full wave rectifier full wave rectifier 1 PHASE 2HVFWB10KCUF 2HVFWB10KDUF 2HVFWB15KDUF
Text: 2?0bûHb 0 0 0 0 1 7 4 TÛ3 Ir jN ^ I —F \W C ^ r - SERIES HVFWB UF 5 to 20 KV 2 Amps. 75 ns. Recovery Ultra-Fast • High Voltage • Full-Wave Rectifier Bridge Assemblies HVCA Number Repetitive Peak Reverse Voltage VRRM PerLeg V Volts Avg. Forward Current M ax
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2HVFWB10KCUF
T-75 A HIGH VOLTAGE DIODES
ultraFast Recovery Bridge Rectifier
fast recovery bridge rectifier
BRIDGE RECTIFIERS
full wave bridge rectifier
Full wave rectifier
full wave rectifier 1 PHASE
2HVFWB10KDUF
2HVFWB15KDUF
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BAS21
Abstract: No abstract text available
Text: SEMICONDUCTOR DICE SWITCHING DIODES vF V BR> Dice type BA S21 Description High voltage single diode Ir Ip T rr Max. at V R Typical Geometry Min. Max. at Volts Volts mA (jA Volts 250 1.0 100 0.1 200 50* G 24 6 G 25 nS H D 3A Single diode 85 1.0 10 1.0 75 H D 2A
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BAS21
100J2
100S1,
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diode g29
Abstract: No abstract text available
Text: SEMICONDUCTOR DICE SWITCHING DIODES vF V BRI Dice type Description T rr Ir Min. Max. at Volts Volts mA «A Volts nS 250 1.0 100 0.1 200 50* G24 lF Max. at V R Typical Geometry BA S21 High voltage single diode H D 3A Single diode 85 1.0 10 1.0 75 6 G25 H D 2A
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100J2
100i2,
diode g29
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B0013
Abstract: CDSF4448 CDSU4448 CDSW4148-G CDSW4448-G smd diode T3 SMD Diode r100ohm
Text: COMCHIP Small Signal Switching Di des S M D D IO D E S P E C IA L IS T CDSW4448-G Voltage: 75 Volts Pd:400mW RoHS Device SOD-123 Features D esig n ed fo r m ounting on sm all s u rfa c e High sp e e d sw itching. High m ounting c ap ability, strong surge w ith stan d , high reliability.
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CDSW4448-G
400mW
CDSN4448-1206
CDSF4448
OD-323F
CDSU4448
OD-523F
OD-123,
MIL-STD-750,
CDSW4148-G
B0013
CDSW4148-G
CDSW4448-G
smd diode T3
SMD Diode
r100ohm
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Untitled
Abstract: No abstract text available
Text: t.ME D • Sfi7bbSl OGDTV'îS 007 « N X n MAXIM I N T E G R A T E D P R O D U C T S 19-3786; Rav 1; 9/92 / l / l / I X I / l / l High-Speed, Low -Voltage, M icropow er Op Amps D escrip tio n The MAX402/MAX438 require less than 75|iA of supply current while delivering 2MHz gain bandw idth with 7V/|xs
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MAX402/MAX438
MAX402)
MAX438)
MAX402
MAX403
10MHz
AX403/MAX439
375nA
MAX438EPA
MAX438ESA
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TRANSISTOR NPN BA RV SOT - 89
Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
Text: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes
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CQ89N
CQ89DS
CQ89MS
CQ89NS
OT-89
CMPSS061
CMPS5062
CMPS5063
CMPS5064
CZS5064
TRANSISTOR NPN BA RV SOT - 89
bc816
transistor ZT 2222a
BO338
CMPSH-3SE
2222A transistors
NPN 800V 900 watt 3a
TR 3906 PNP SM
BG SOT26
CMPZ4124
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