Untitled
Abstract: No abstract text available
Text: SKKT 122, SKKH 122 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 2 Thyristor / Diode Modules MNIO MNNO= MDNO M SVV RAVV RBVV R¥VV M UVV RCVV R[VV R@VV PJTM Q RCC T G*2 > RUVW J5 Q UU XEH IYYJ RCCZVU? IYY$ RCCZVU? IYYJ RCCZRC? IYY$ RCCZRC? IYYJ RCCZR[? IYY$ RCCZR[?
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diode M5C
Abstract: m5c diode
Text: MMBD7000 Dual Small Signal Switching Diode TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) t c u rodFeatures P New • Silicon Epitaxial Planar Diode • Fast switching dual diode, especially suited for automatic insertion Top View .056 (1.43) .052 (1.33)
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MMBD7000
O-236AB
OT-23)
OT-23
O-236AB)
E8/10K
037iant
diode M5C
m5c diode
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m5c diode
Abstract: marking code m5c marking M5C 236AB MMBD7000
Text: MMBD7000 Dual Small-Signal Switching Diode TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) t c u rod P New Features • Silicon Epitaxial Planar Diode • Fast switching dual diode, especially suited for automatic insertion Top View .056 (1.43) .052 (1.33)
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MMBD7000
O-236AB
OT-23)
OT-23
O-236AB)
E8/10K
30K/box
100mA
m5c diode
marking code m5c
marking M5C
236AB
MMBD7000
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BIR-BM1341W SINCE 1981 END-LOOK PACKAGE LIGHT EMITTING DIODE z Package Dimensions: 3.1 .122 z Features: 4.5± 0.1 1. High radiant power and high radiant intensity. 2. Standard T-1package. 1.5(.059) MAX 3. Peak wavelength λp=940nm.
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BIR-BM1341W
940nm.
11000pcs
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IR LED 840 nm
Abstract: "Infrared LED" 880 nm wavelength circuits led sign diagram MIE-324H4 IR LED 840 nm 3mm
Text: GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-324H4 Package Dimensions Unit : mm inches The MIE-324H4 is a GaAlAs infrared LED having a peak wavelength at 850nm. It features ultra-high power, φ 3.50±0.25 (.138±.010) φ 3.10±0.20 (.122±.008)
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MIE-324H4
MIE-324H4
850nm.
00MIN
IR LED 840 nm
"Infrared LED" 880 nm wavelength circuits
led sign diagram
IR LED 840 nm 3mm
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TIP 122 100 V
Abstract: TIP 122 transistor QED121 QED122 QED123 qsd122
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • != 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
100021B
TIP 122 100 V
TIP 122 transistor
QED121
QED122
QED123
qsd122
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BIR-BM1331W SINCE 1981 END-LOOK PACKAGE LIGHT EMITTING DIODE z Package Dimensions: 3.1 .122 z Features: 1. High radiant power and high radiant intensity. 4.5±0.1 2. Lead T-1 1.0"(3mm) package. 3.8(.150) 1.5(.059) 3. Peak wavelength λp=940nm.
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BIR-BM1331W
940nm.
11000pcs
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qed12x
Abstract: No abstract text available
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
QED122
qed12x
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D880
Abstract: No abstract text available
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
QED122
D880
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qed12x
Abstract: QED121 QED122 QED123 QSD122
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
DS300336
qed12x
QED121
QED122
QED123
QSD122
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SOT-23 Rod
Abstract: diode marking e8 Diode Marking 016 SOT23 DIODE marking CODE AV
Text: MMBD914 Small-Signal Switching Diode t c u rod P New Features TO-236AB SOT-23 • Silicon Epitaxial Planar Diode • Fast switching diode in case SOT-23, especially suited for automatic insertion. .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33)
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MMBD914
O-236AB
OT-23)
OT-23,
OT-23
E8/10K
30K/box
30K/box
SOT-23 Rod
diode marking e8
Diode Marking 016
SOT23 DIODE marking CODE AV
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Untitled
Abstract: No abstract text available
Text: MMBZ5225 thru MMBZ5267 TO-236AB SOT-23 t c u rod P New .122 (3.1) .110 (2.8) Zener Diodes Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 0.035 (0.9) .016 (0.4) 0.031 (0.8) .016 (0.4) .045 (1.15)
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MMBZ5225
MMBZ5267
O-236AB
OT-23)
ZMM5225.
ZMM5267,
OD-123
MMSZ5225.
MMSZ5267.
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sot-23 Marking l7
Abstract: SOT23 MARKING L7
Text: BAT17 and BAT17DS Schottky Diodes t c u rod P New SOT-23 .122 3.1 .118 (3.0) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 0.037 (0.95) 0.037 (0.95) 2 .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) 0.079 (2.0) Dimensions in inches and (millimeters) max. .004 (0.1)
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BAT17
BAT17DS
OT-23
OD-123
BAT17W,
OD-323
BAT17WS
BAT17
OT-23ed)
sot-23 Marking l7
SOT23 MARKING L7
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t-122 diode
Abstract: Skkt122/16E
Text: se MIKRDN V rsm V rrm V drm d W d t c r Itrm s (maximum values for continuous operation) 195 A Ita v V/ns (sin. 180: Tease = 85 °C) 128 A V V 900 800 500 SKKT 122/08 D 1300 1200 1000 SKKT 122/12 E 1500 1400 1000 SKKT 122/14 E 1700 1600 1000 SKKT 122/16 E
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SKKT122
SKKH122
t-122 diode
Skkt122/16E
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QED122
Abstract: QEC121 QEC122 QED121 QED123 diode 465 nm 5 mm tinted radiant energy
Text: r*T | m m É éiìwiììbA ^ S ü J H i OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The QEC12X is an 880 nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution.
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QEC121/122
ST2131
QEC12X
QSC11X
QED123
mW/10Â
mA1671
QED122
QEC121
QEC122
QED121
diode 465 nm 5 mm tinted
radiant energy
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Untitled
Abstract: No abstract text available
Text: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q ED 12X is an 880 AIGaAs LED encapsulated in a clear, peach tinted, plastic T-1% package. FEATURES • Tight production E- distribution. ■ Steel lead fram es for im proved reliability in solder
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QED121/122/123
ST2132
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Diode 5A
Abstract: ot 112 FSH05A03L FSH05A03LB U-291
Text: SCHOTTKY BARRIER DIODE FSH05A03L FSH05A03LB s a /sov 3.H.122 . MAX FEATURES MAX •I.81189) ^ / rW m L tmax o Similar to T0-220AC and T0-220AB Case o Fully Molded Isolation t & 2.851112) 6.9 2721 6.3(.248l i 2.5 5 (.iW 5 ) 2.85(.U2) 15.41.606) 33 5 T IT O
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A/30V
FSH05A03L
FSH05A03LB
O-220AC
O-220AB
161IMAX
FSH05A.
Diode 5A
ot 112
FSH05A03LB
U-291
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jedec package TO-243AA
Abstract: G0177
Text: INTERNATIONAL RECTIFIER bSE ]> 4655452 OOlTb'H 122 * I N R Data Sheet No. PD-2.176 INTERNATIONAL RECTIFIER X O R 10J SERIES 1 Amp Surface Mount Silicon Rectifier Diodes Description/Features Major Ratings and Characteristics 10J 'F A V 1.0 A @ Max. T ^ 31
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QEC121
Abstract: No abstract text available
Text: EU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC121/122 126 3.20 REFERENCE SURFACE T h e Q EC 12X is an 8 8 0 nm AIG aA s LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES Tight production Ee distribution. Steel lead fram es for im proved reliability in solder
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QEC121/122
QSC11X
ST2131
QEC122
74bbfl51
QEC121
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F16KQ50S
Abstract: F16KQ50SB F16KQ60S F16KQ60SB
Text: SCHOTTKY BARRIER DIODE F16KQ50S F16KQ60S F16KQ50SB F16KQ60SB 16.6A/50— 60V 3.1 .122> MAX u_10.3{.405 _ M AX 4.8U 89) f*M AX FEATU RES 3.41.134)^ ° S i m i l a r to T 0 - 2 2 0 A C and T 0 - 2 2 0 A B Case Fully Molded Isolation T 6.9(,272) 6-30248) I 2.85(.112)
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F16KQ50S
F16KQ60S
F16KQ50SB
F16KQ60SB
T0-220AC
T0-220AB
3C248)
F16KQ*
bblS123
D001327
F16KQ60SB
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FSH05A03L FSH05A03LB sa/sov 3.H.122 , MAX FEATURES 10.3Î405J M AX -l.8l.189) 3 .4 U 3 4 U , /.WI[Ä)D ^ / T ? O T D IA rMAX o Similar to T0-220AC and T0-220AB Case — f— o Fully Molded Isolation 6.912721 6.3Î.2481 2.851112) *
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FSH05A03L
FSH05A03LB
T0-220AC
T0-220AB
TT3T353Ã
161IM
bbl5123
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LHi 878
Abstract: LHi 878 application A429 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A
Text: bbSBTBl Philips Semiconductors GGEL&3 E 122 M APX Product specification Low voltage avalanche diode N AMER PLVA400A P H IL IP S /D IS C R E T E FEATURES DESCRIPTION • Very low dynamic im pedance at low currents: approxim ately Vfeo of conventional series
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bbS3T31
PLVA400A
PLVA400A
DO-35
PLVA465A
PLVA468A
PLVA459A
PLVA456A
PLVA450A
PLVA453A
LHi 878
LHi 878 application
A429
PLVA453A
PLVA462A
PLVA465A
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TIP 122 127
Abstract: tip 122 tip 127 TIP 122 100 V tip 121
Text: f Z 7 SGS-THOMSON HP120/121/122 ^ 7# T IP 1 2 5 / 1 2 6 /1 2 7 G W fô m iO T « ! COMPLEMENTARY SiLICON POWER DARLINGTON TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALES TYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL
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HP120/121/122
TIP120,
TIP121
TIP122
T0-220
TIP125,
TIP126
TIP127.
TIP120/125
TIP 122 127
tip 122
tip 127
TIP 122 100 V
tip 121
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QEC121
Abstract: No abstract text available
Text: ü A IGaA s INFRARED EMITTING DIODE OPTOELECTRONICS QEC121/122 DESCRIPTION PACKAGE DIMENSIONS I REFERENCE SURFACE .126 3.20 .106(2.69) The QEC12X is an 880 nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES J .042(1.07) ±0 1 0 (± 2 5 )
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QEC121/122
QEC12X
QSC11X
QEC121
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