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    T 402 TRANSISTOR Search Results

    T 402 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T 402 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot-363 702

    Abstract: MPS5172 "cross-reference" BC237 BC307 MMVL3700T1
    Text: CHAPTER 4 Index http://onsemi.com 1121 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22


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    PDF MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 sot-363 702 MPS5172 "cross-reference" BC237 BC307 MMVL3700T1

    low noise transistors bc638

    Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
    Text: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22


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    PDF MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 low noise transistors bc638 BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856

    thermistor 100k

    Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
    Text: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,


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    PDF AN-090 SLD-1026Z EAN-105860 thermistor 100k 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E

    pnp 8 transistor array

    Abstract: ALA401 Boron 220 resistor array ALA402 RESISTORS transistor array pnp npn 8 transistor array GL RESISTOR ARRAY
    Text: A T & T MELEC I C 2SE D • G0 5 G 0 2 b 000^54 1 Preliminary Data Sheet ALA401/402 Semicustom Linear Arrays Description The ALA401/402 Semicustom Linear Arrays are fabricated using a complementary bipolar integrated cir­ cuit (CBIC) process that offers the advantages of vertical NPN and PNP transistors. CBIC technology


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    PDF 005005b 0002T54 ALA401/402 ALA401 ALA402 5002b 100x10-3 pnp 8 transistor array Boron 220 resistor array RESISTORS transistor array pnp npn 8 transistor array GL RESISTOR ARRAY

    700 allen-bradley

    Abstract: No abstract text available
    Text: 6115950 MICROSEMI CORP/POWER 71C 00312 Series D T - 3 3 - f "5 PTC 401, PTC 402 High Voltage NPN Transistors 3 Amperes *700 Volts FEATURES • High Voltage Rating - 700 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue


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    A22 T transistor

    Abstract: RS Components transistor t03
    Text: RS Technical Library T03 Transistor Cover Dimensions RS Stock No 402-131 A22-4015 T 0 3 thin flange 1.375 34 .93 480 ( 12 . 19 ) 00 in oo d m CM RS Components shall not b e liable for any liability or loss of any nature (howsoever caused and whether or not due to RS components' negligence)


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    PDF A22-4015 A22 T transistor RS Components transistor t03

    Avantek UTC 519

    Abstract: Avantek UTC 518 UTO 211 AVANTEK Avantek UTO-1004 AVANTEK utc AVANTEK utc 1004 UTO-1004 UTO1004 Avantek utc 573 TC 14066
    Text: AV A N T E K INC 7b deT| i m n t b □□□4sn Thin Film Cascadable Amplifier 10-1000 MHz 1004 Series o • t - 7 4 -/j ~&/ ^ 0AVAN TEK FEATURES • + 22.0 Output Power UTC 1004 TC 1 Case p. 398 UTO-1004 T O 8T C ase (p. 402) ELECTRICAL SPECIFICATIONS (Measured in a 50-ohm system @ + 15 VDC nominal unless otherwise noted)


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    PDF t-74-/j~ UTO-1004 50-ohm Avantek UTC 519 Avantek UTC 518 UTO 211 AVANTEK Avantek UTO-1004 AVANTEK utc AVANTEK utc 1004 UTO-1004 UTO1004 Avantek utc 573 TC 14066

    diode sy 162

    Abstract: SC236D 6P14P diode sy SF 127 C GF147S 6D22S 6P45S ECC88 6n23p
    Text: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN iR iU ii 1r a d i o - t e i e v i s l o n I SEITE JUNI 1 9 8 1 b 1 - 7 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S SERVICE-ANLEITUNG zum Translstor-Taschenempfänger "Signal 402"


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    cd4538b application

    Abstract: CD4538B MC14538 equivalent CD45388 15-V CD4098B MC14538 RCA-CD4538B
    Text: G E S OL I D STATE 01 DEI ' 3 fi 7 S 0 f l l - : : G0 1 3 4 0 2 4 i ~402 _ _D T - 5 H f CD4538B Types CMOS Dual Precision Monostable Multivibrator High-Voltage Types 20-Volt Rating Features: • Retriggerable/resettable capability ■ Trigger and reset propagation delays


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    PDF 00134DH CD4538B 20-Volt -Ht51ll RCA-CD4538B 92CM-3309I CD4S38BH. 92CS-36706 cd4538b application MC14538 equivalent CD45388 15-V CD4098B MC14538

    c454

    Abstract: No abstract text available
    Text: HIGH VOLTACI TRANSISTORS I TO-3 le Veto Ic SUS 25*C MAX SPC-401 SPC-402 SPC-410 SPC-411 SPC-413 SPC-423 SPC-423^ Sii C-454 S^C-425 ♦ V cex @ t} 9 PT TYPE NO. lA/atts A V 100 100 80 100 2.0 3.5 3.5 3.5 300 325 200 300 3¿S 16 *5 3.!> 1Ò0 100 3.5 3.5 iôô


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    PDF SPC-401 SPC-402 SPC-410 SPC-411 SPC-413 SPC-423 SPC-423^ C-454 C-425 SPC-413 c454

    tungsram

    Abstract: rft halbleiter service-mitteilungen service mitteilungen rft RFT Service Mitteilung Tesla VEB Funkwerk Erfurt VEB Kombinat Mitteilung VEB RFT Servicemitteilungen
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N r a d i o - television SEITE AUSGABE: OKTOBER E E 1 - 8 Der Taschenempfänger "QUARTZ - 402" setzt die Reihe der Impor­ te ähnlicher Empfänger aus der Sowjetunion fort. Abgesehen von


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    PDF QUARTZ402" 145x213x73 III/18/379 tungsram rft halbleiter service-mitteilungen service mitteilungen rft RFT Service Mitteilung Tesla VEB Funkwerk Erfurt VEB Kombinat Mitteilung VEB RFT Servicemitteilungen

    PLB16002U

    Abstract: No abstract text available
    Text: -7 = -3 3 - O S ' P re lim in a ry s p e c ific a tio n P h ilip s S e m ic o n d u c to rs PLB16002U SbE D 711GÛEt 0 0 M b 402 3b2 FEATURES D E S C R IP T IO N • Input m atching cell allows an easier design of circuits • Diffused em itter ballasting


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    PDF PLB16002U FO-229 00Mb402 PLB16002U

    b20100

    Abstract: ptc 205 ir 520 T0-204MA
    Text: Series PTC 401, PTC 402 High Voltage NPN Transistors 3 Amperes * 700 Volts FEATURES • High Voltage Rating - 7 0 0 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators • PWM Inverters


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    BUL 380

    Abstract: BUL 390 NPN Transistor 10A 24V transistor sd 965 SD1400-03 M118 930MHZ 25CC SD1400-3
    Text: H ffS-nnnnj-*. »ra r* S IV U C r O S e m i P ro g re s a P o w e re d b y T ec h no log y 140 Commerce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 b U l 4 U U -0 RF & MICROWAVE TRANSISTORS 900-960MHZ CLASS C, BASE STATIONS CLASS C TRANSISTOR


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    PDF 900-960MHZ 930MHz SD1400-03 SD1400-3 960MHz SD1400-3 BUL 380 BUL 390 NPN Transistor 10A 24V transistor sd 965 M118 930MHZ 25CC

    Untitled

    Abstract: No abstract text available
    Text: H m www S M lC ITßSQ uil « » mm W « w «UPI W « 1^0 Commerce Drive Afxfx Montgomeryville, PA 18936-1013 Tel: {215 631-3840 o n « o U 1 4 U U ” d> RF & MICROWAVE TRANSiSTORS 9Q0-960MHZ CLASS C, BASE STATIONS G LA S S C T R A N S IS T O R FREQUENCY


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    PDF 9Q0-960MHZ SD1400-03 SD1400 968MHz SD1400-3

    C2223

    Abstract: HR-R capacitor C2223 ic C2223-18 2238 capacitor 24v
    Text: M i c r o s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 T C C 2 2 2 3 - 1 8 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQ ïNCY 7. ? .-? 3GHz POWER OUT 18.SW POWER GAIN fi 5dB VOLTAGE ?4 (IV HERMETIC PACKAGE


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    PDF 1CC2223-18 wi1870 C2223-18 13S/3 C2223 HR-R capacitor C2223 ic C2223-18 2238 capacitor 24v

    transistor k 4110

    Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
    Text: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­


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    PDF i-noa36Â osit34Â 354G-01 transistor k 4110 K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13

    m147 transistor

    Abstract: 1029F M147 ci m147 SD1868
    Text: Hi f I r l / C lU O J v f I If P ro g re s s P o w ered b y T ec h no log y 140 Com m erce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1868 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.6-1.65GHz POWER OUT


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    PDF SD1868 65GHz SD1868 S88SDI868-34 m147 transistor 1029F M147 ci m147

    2sb772 TO92

    Abstract: 2sb772 2SB772S 2SD882
    Text: m Semiconductor 2SB772/2SB772S PNP Epitaxial Silicon Transistor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to 2SD882 M AXIM U M R A TIN G S ITa = 2 5 X. \ Symbol 2SB772S 2SB772 Unit Characteristic Max Max V -50 -50 Collector-Base Voltage


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    PDF 2SB772/2SB772S 2SD882 2SB772S 2SB772 300-500-L000 371R4Ã 2sb772 TO92 2SD882

    TCC2223-18

    Abstract: tic 223 M147 SD1870 23GHz filter
    Text: m m m R F Products m Microsemi P ro g re ss Pow ered b y T ech nology 140 C o m m erce D rive M o n tg o m e ry v ille , PA 18936-1013 Tel: 215 631-9840 TC C 22 2 3 -1 8 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 2.2-2 3GHz


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    PDF TCC2223-18 SD1870 2223-1B TCC2223-18 10OpF 000pF 988TCC2223-18-04 tic 223 M147 23GHz filter

    transistor c 6073

    Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
    Text: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005


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    PDF 00003b2 TQ-204MA PTC102 transistor c 6073 TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H O M S O N A T /. M «glLilgm 5ÜIDIgi_A M 817 1 9 -0 3 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A i REFRACTO RY/G O LD METALLIZATION • EM ITTER SITE BALLASTED . LOW THERMAL RESISTANCE . IN PU T/O U TPU T MATCHING


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    PDF AM81719-030

    2SD2436

    Abstract: 2SC4969 2SB1584 2sd2433 2sb1582 2sb1583 2sd2434 2SC4971 2sc4973 2sd2432
    Text: T Mini 3-pin Package IW f é Outline Transistors, Diodes s T S - a a O S m / 'C y 'f r - S / 't t . ? & |M > 3 il}:F 5 - S !i:ifc '< . a e.cc u — K a u t i J i t f i i t t i t £ / * • : / * r - y - e t c n - j f y - y 0) f f * Art) .7mmt » < , * » 0 5 f 5 lW b l= lllttt' t l i t o


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    PDF machine71 2SC4972 2SC4974 2SC4975 2SC4973 MA152A MA1U152A MA1U152K MA152K MA1U152WA 2SD2436 2SC4969 2SB1584 2sd2433 2sb1582 2sb1583 2sd2434 2SC4971 2sc4973 2sd2432

    4027 ram

    Abstract: 4027-3 ITT 4027 pin diagram 4027 4027 ttl 56482
    Text: Signetics Memories - R A M 4027-4096 Bit Dynamic RA M C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 4 0 2 7 is fabricated with n-channe! silicon gate tech­ nology fo r high perform ance and high functional density, and uses a single transistor d ynam ic storage cell and


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    PDF 16-pin 4027 ram 4027-3 ITT 4027 pin diagram 4027 4027 ttl 56482