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    T 2N3055 Search Results

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    T 2N3055 Price and Stock

    Microchip Technology Inc Jantx2N3055

    Bipolar Transistors - BJT 70V 15A 6W NPN Power BJT THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Jantx2N3055
    • 1 $52.35
    • 10 $52.27
    • 100 $50.38
    • 1000 $50.38
    • 10000 $50.38
    Get Quote

    Continental Device India Ltd T2N3055HV

    Transistor: NPN; bipolar; 100V; 15A; 100W; TO3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME T2N3055HV 117 1
    • 1 $1.26
    • 10 $0.95
    • 100 $0.75
    • 1000 $0.68
    • 10000 $0.68
    Buy Now

    Continental Device India Ltd T2N3055

    Transistor: NPN; bipolar; 60V; 15A; 115W; TO3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME T2N3055 1
    • 1 $1.51
    • 10 $1.2
    • 100 $0.81
    • 1000 $0.72
    • 10000 $0.72
    Get Quote

    T 2N3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CA3066

    Abstract: AN6668 LC1 E18 01 darlington cascode second stage CA3130 CA3130A CA5130 CA5130A CA5130AE CA5130E
    Text: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark TM T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT S 3 1 E A3 IBL C S S PO Data Sheet 15MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET


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    PDF CA3130 15MHz, CA5130A CA5130 CA3066 AN6668 LC1 E18 01 darlington cascode second stage CA3130 CA3130A CA5130AE CA5130E

    2N3055S

    Abstract: No abstract text available
    Text: 2N3055S SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055S is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O -3 U B75 15 A I \ .1 3 5 MAX, I MAX. 7.0 A T .u SEATÍNG 60 V PLANE. .655 117 W @ T = 25 °C


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    PDF 2N3055S 2N3055S

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    Abstract: No abstract text available
    Text: 2N3055S m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055S is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O - 3 U 4J 15 A lc 7.0 A T -U S E A T IN G PLANE. V CE 60 V p 1 DISS 117 W @ Tc = 25 °C


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    PDF 2N3055S 2N3055S

    Untitled

    Abstract: No abstract text available
    Text: MICRO E LE CT RONI CS LTD 41E D b G T I TÛ ê 0 0 0 0 cl ci2 3 MEHK T -3 3 "/^ 2N3055 NPN HIGH POWER SILICON PLANER TRANSISTOR MECHANICAL UUTblWE. GENERAL DESCRIPTION The 2N3055 is an NPN silicon planer power transistor. It is intended for use in class B


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    PDF 2N3055 2N3055 15Amp l00ohm

    TIP 2n3055

    Abstract: transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 122 transistor TIP 41 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127
    Text: T Y P E TIP3055 N-P-N SIN G LE-D IFFU SED M ESA SILICON POWER TRAN SISTO R FO R POWEiR A M P L IF IE R A N D H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S P L A S T IC -C A S E R E P L A C E M E N T F O R 2N3055 • 90 Watts at 25°C Case Temperature


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    PDF TIP30S5 2N3055 TIP 2n3055 transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 122 transistor TIP 41 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127

    IRF5402

    Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
    Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M


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    PDF BZX55C5V6CSM T0220SM 2N2222CSM 2N2907CSM BCW33CSM BZX55C7V5CSM 2N2369ACSM 2N3209CSM 3250C BCY59CSM IRF5402 IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342

    2M3055

    Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
    Text: G E N E R A L P U R P O S E T R A N S IS T O R S Comple­ Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047


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    PDF 2N3055 2N3715 2N3716 2N3771 2M3772 2N3791 2N3792 2N4234 2N4398 2N4399 2M3055 B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908

    2n3055 tos

    Abstract: 2n3714 fairchild 10 amp npn power transistors 2N3715 FAIRCHILD 2N4915 2N3054 2N3440 2N6233 BFX34 SE9331
    Text: Semiconductors Fairchild Semiconductors Silicon Power Transistors NPN Power Transistors Metal Can T05 REFEREN CE T A B L E MAX ra See small signal general purpose amplifier and high voltage sections | C H A R A C T E R IS T IC S @25‘ C in g s V Pfo T T c—25“C


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    PDF BFX34 35373H 2N3440 35374F 2N3713 3M54E 2N3714 2N3715 35BSIA 2N3716 2n3055 tos 2n3714 fairchild 10 amp npn power transistors 2N3715 FAIRCHILD 2N4915 2N3054 2N6233 SE9331

    2SD5703

    Abstract: 2sd 209 l 2N6883 638s IC 638S T1P61 BD223 CX704 2n6125
    Text: T- SEMICONDUCTORS INC OTE S | 813tUS0 0 D M 2 6 2 4 | S3 -fi Power Transistors •c D E V IC E M ax v CEO M ax A v hF E M in /M a x ?f l ç P O L A R IT Y v C E (sa t M ax fti Iq »T M in p D (M ax) T C =25°C W A V A M Hi PACK­ AGE 2N3054 2N3055 2N3055SD


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    PDF 813tUS0 O-48D 2SD5703 2sd 209 l 2N6883 638s IC 638S T1P61 BD223 CX704 2n6125

    2N3065

    Abstract: MJ16015 mj15015 MJ15016 2N3055A 2N3065A 3055A 2N3055* motorola
    Text: D FJt.3t.7SS4 n O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA, SC XSTRS/R D 96D 8 0 2 7 5 F DDflOaTS T r i ^ b L ~ r ~ 3 3 - s ^ MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA NPN PNP 2N3055A MJ15015 MJ2955A MJ15016 C O M P L E M E N T A R Y S IL IC O N HIGH-POW ER TR A N SISTO R S


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    PDF 2N3055A MJ15015 MJ2955A MJ15016 2N3065 MJ16015 mj15015 MJ15016 2N3065A 3055A 2N3055* motorola

    Untitled

    Abstract: No abstract text available
    Text: 2N3055A m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T03 U 4J MAXIMUM RATINGS 7.0 A VCE p 1 DISS T 60 V .65 5 -675 115 W @ T c = 25°C -65 °C to +200 °C "^"sTG


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    PDF 2N3055A 2N3055A

    Untitled

    Abstract: No abstract text available
    Text: 2N3055 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O - 3 lc 15 A Ib 7.0 A L - . 6 7 5 «J I MAX. [ .1 3b MAX. T V2bQ filò -L ÏÏ SE A U N G


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    PDF 2N3055 2N3055

    zn409ce servo diagram

    Abstract: mabuchi rs54 ZN409CE ZN409 Mabuchi Motor ZTX502 27 MHZ transmitter FERRANTI ELECTRONICS 2N3055 power amplifier circuit diagram ztx550 equivalent
    Text: Precision Servo integrated Circuit 5 =t4 FEATU RES • • • • • • • • • • V Lo w E xte rn a l C o m p o n e n t C o u n t Lo w Q u ie sce n t C u rre n t 7 m A ty p ic a l at 4.8V E x c e lle n t V o lta g e and T e m p e ra tu re S ta b ility


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    PDF ZN409CE ZN409CE ZIM409CE, ZTX450 100kD. ZN409CE, IN409CE. zn409ce servo diagram mabuchi rs54 ZN409 Mabuchi Motor ZTX502 27 MHZ transmitter FERRANTI ELECTRONICS 2N3055 power amplifier circuit diagram ztx550 equivalent

    RCA 40251

    Abstract: 2N3055H 2N3055H RCA 2n6254 2N6253 2N6371 40251 2N637 2N6371 RCA rca 2n6254
    Text: SEMELAB y i ï i l Sb' POWER T R A N S IS T O R S 2N3055H, 2N 6253, 2N 6254, 2N6371, 40251 H om etaxial*Base High-Power Silicon N-P-N Transistors • 2 N 6 2 5 4 : premium type from 2N3055H family Rugged, Broadly Applicable Devices For Industrial and Commercial Use


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    PDF 2N3055H, 2N6253, 2N6254, 2N6371, 2N3055H 2N6253 2N6251 RCA 40251 2N3055H RCA 2n6254 2N6371 40251 2N637 2N6371 RCA rca 2n6254

    2N3599

    Abstract: 1b01
    Text: -JoütroiI S P A C E FLIG H T P O W E R T R A N S IS T O R S POWER @ 100“C WATTS CASE TYPE 5.0 5.0 5.0 5.0 5.0 4.0 30.0 30.0 30.0 30.0 TO-5 TO-111 TO-111 T O - l ll / I T O -1 l l / I 5.0 5.0 2.0 2.0 2.0 5.0 4.0 4.0 4.0 TO-5 TO-5* TO-5 TO-5 TO-5 5.00 —


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    PDF S2N2S58 S2N2880 S2N2380-1 S2N3749 S2N3749-1 S2N4150 S2N4I50-1 S2N4863 2SN4863-1 S2N4B63-2 2N3599 1b01

    Untitled

    Abstract: No abstract text available
    Text: 1563698 B OW M AR / W HI T E BOUMA R / U H I T E I T W h TECHNOLOGY TECHNOLOGY 9 7D 00322 T? 15^3^0 A ^ W B S S S tL T-5T-/H3 ^ S E R IE S 8000 A N D 8001 nmnnri onhalHI.lru nl-R iiw m af lnfllniiT ipnI.C ornoroll IW 0D 0D 32E H YB R ID V O LTA G E R EG U LA TO R S


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    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEHICOND/DISCRETE 'IS NPN DIFFUSED JUNCTION i - 33. D ËT | 725GS33 □oo4cmb j / T A B L E 1 - N P N S IL IC O N D IF F U SE D J U N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a


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    PDF 725GS33 2N6103 O-220 2N3055 FGT3055 2N3442 2N6101 T0-220 2N6099

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    pmd12k-40

    Abstract: 2n6543 bu208 2n3713 LM3661TL-1.40
    Text: Power Transistors Ir " -— y i TO-3 Case TYPE NO. •c PD @ lc hpE BVc b O BVc e o v c e s a t) *c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 m MAX *T ‘ TYP (V) (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160


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    PDF 2N3055 2N3442 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773 2N4913 pmd12k-40 2n6543 bu208 LM3661TL-1.40

    2N1720

    Abstract: 2n2891 2N3055C 2n3198 2N1718 2N3172 2N3171 2N2632 2n2854 2N2984
    Text: ^alitran_ ^ moj©? ©atoil©© Devices. Inc. S T A N D A R D P A R T L IS T SINGLE DIFFUSED CHIP SELECTIONS MIN. VOLTS 306XC001 306XC092 331XC002 331XC0CI3 55 140 40 BO 140 333XC0D1 345XC0CI1 345XC002 345XC003 349XC001 349XC0C2 140 45


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    PDF 306XC001 306XC092 33ixca 331XC002 331XC0CI3 333XC0D1 345XC0CI1 345XC002 345XC003 349XC001 2N1720 2n2891 2N3055C 2n3198 2N1718 2N3172 2N3171 2N2632 2n2854 2N2984

    2N3055 TO-220

    Abstract: 2n3055 to 220 2N3055 TO220 2N3055 2N6103 FGT3055 "Solenoid Drivers" 2N3442 2N3054 2N3441
    Text: NPN DIFFUSED JUNCTION T A B L E 1 - N P N S IL IC O N D IF F U S E D J U N C T IO N T R A N S IS T O R S The transistors show n in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching


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    PDF 2N6103 2N3055 FGT3055 T0-220 2N3442 2N610t, 2N3055 TO-220 2n3055 to 220 2N3055 TO220 "Solenoid Drivers" 2N3054 2N3441

    TIP 2n3055

    Abstract: tip41c tip42c 2n3055 2N3055 TO-220 2n3055 application note OF transistor 2n3055 to-3 package 7 amps pnp transistor 2N3055 TO220 NPN 1.5 AMPS POWER TRANSISTOR n6111 2N6103
    Text: NPN DIFFUSED JUNCTION T A B L E 1 - N P N S IL IC O N D IF F U S E D J U N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching


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    PDF 2N6103 2N3055 FGT3055 T0-220 2N3442 2N610KAGE) 2N6288 2N6111 TIP29 TIP30 TIP 2n3055 tip41c tip42c 2n3055 2N3055 TO-220 2n3055 application note OF transistor 2n3055 to-3 package 7 amps pnp transistor 2N3055 TO220 NPN 1.5 AMPS POWER TRANSISTOR n6111

    6822 TRANSISTOR equivalent

    Abstract: transistor T009 transistor W1A 93 TRANSISTOR NPN 6822 TRANSISTOR 434 transistor w1a 84 w1a 02 transistor transistors 6822 CECC50000 cecc00200
    Text: BRITISH STAND ARD S INSTITUTION 2, PARK STREET. LONDON, W1A 2BS BS CECC 50 004-042 Specification available from:— AS SH O W N IN PD 9 0 0 2 , and CECC 0 0 2 0 0 S EM E L A B MANUFACTURING LTD. COVENTRY ROAD. LU T T E R W O R T H , L E I C E S T E R S H I R E .


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    PDF 2N3055 6822 TRANSISTOR equivalent transistor T009 transistor W1A 93 TRANSISTOR NPN 6822 TRANSISTOR 434 transistor w1a 84 w1a 02 transistor transistors 6822 CECC50000 cecc00200

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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