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    SYMB Price and Stock

    Honeywell Sensing and Control LSYMB6D

    SWITCH SNAP ACTION DPDT 10A 120V
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    DigiKey LSYMB6D Box 10 1
    • 1 $323.17
    • 10 $279.324
    • 100 $279.324
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    Mouser Electronics LSYMB6D 10
    • 1 $342.94
    • 10 $319.63
    • 100 $279.32
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    Newark LSYMB6D Bulk 10
    • 1 -
    • 10 $295.07
    • 100 $295.07
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    RS LSYMB6D Bulk 46 66 Weeks 1
    • 1 $368.44
    • 10 $368.44
    • 100 $368.44
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    TTI LSYMB6D Each 1
    • 1 $352.06
    • 10 $352.06
    • 100 $352.06
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    Powell Electronics LSYMB6D 25 1
    • 1 $862.11
    • 10 $775.9
    • 100 $677.37
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    onsemi DUALASYMB12VGEVB

    EVAL BOARD FOR NCP5386B NCP5901B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DUALASYMB12VGEVB Box 1 1
    • 1 $231.25
    • 10 $231.25
    • 100 $231.25
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    Avnet Americas DUALASYMB12VGEVB Bulk 3
    • 1 -
    • 10 $220.2381
    • 100 $205.55556
    • 1000 $205.55556
    • 10000 $205.55556
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    Mouser Electronics DUALASYMB12VGEVB
    • 1 $231.25
    • 10 $231.25
    • 100 $231.25
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    • 10000 $231.25
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    Newark DUALASYMB12VGEVB Bulk 1
    • 1 $240.5
    • 10 $240.5
    • 100 $240.5
    • 1000 $240.5
    • 10000 $240.5
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    Pentair Equipment Protection - Hoffman SYMBRK

    ALUM HMI MOUNTING BRACKETS
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    DigiKey SYMBRK Bulk 1
    • 1 $58.86
    • 10 $58.86
    • 100 $58.86
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    Onlinecomponents.com SYMBRK
    • 1 $57.21
    • 10 $49.52
    • 100 $44.24
    • 1000 $43.58
    • 10000 $43.58
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    Honeywell Sensing and Control LSYMB2D

    SWITCH SNAP ACTION DPDT 10A 120V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LSYMB2D Bulk 10
    • 1 -
    • 10 $361.398
    • 100 $361.398
    • 1000 $361.398
    • 10000 $361.398
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    Mouser Electronics LSYMB2D
    • 1 $465.38
    • 10 $361.39
    • 100 $361.39
    • 1000 $361.39
    • 10000 $361.39
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    Newark LSYMB2D Bulk 10
    • 1 -
    • 10 $476.1
    • 100 $434.34
    • 1000 $434.34
    • 10000 $434.34
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    TTI LSYMB2D 10
    • 1 -
    • 10 $337.48
    • 100 $337.48
    • 1000 $337.48
    • 10000 $337.48
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    Powell Electronics LSYMB2D 28 1
    • 1 $1031.19
    • 10 $928.07
    • 100 $810.23
    • 1000 $810.23
    • 10000 $810.23
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    Schneider Electric NSYMB32

    MOUNTING PLATE MB 32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NSYMB32 Bulk 1
    • 1 $10.02
    • 10 $10.02
    • 100 $10.02
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    Find more SYMB price and stock on Findchips.com

    SYMB Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NCR20C12 Symbios Semiconductors 20C12 Hart Modem Scan PDF
    NCR45CF Symbios Semiconductors Finite Impulse Response Filter Scan PDF
    NCR6518 Symbios Semiconductors Single-Chip Microprocessor With Ram And I/O Scan PDF
    NCR92C02 Symbios Semiconductors Ethernet Twisted Pair Transceiver Scan PDF
    NCR92C392 Symbios Semiconductors IEEE 802.3 10Base2 Transceiver Scan PDF
    SYM53C120 Symbios Logic SCSI Bus Expander Original PDF
    SYM53C810A Symbios Logic Original PDF
    SYM53C860 Symbios Logic Single-Chip High-Performance PCI-Ultra SCSI (Fast-20) I/O Processor Original PDF
    Symbols NXP Semiconductors RF & Microwave Power Transistors and Circulators/Isolators; Symbols Original PDF

    SYMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Reel Taping Specification JEDEC

    Abstract: No abstract text available
    Text: i V. AXIAL TAPING FOR DO-35 PACKAGE A. PRODUCT NAMING SYSTEM Type of package for shipment is classified by a symbol suffixed to a diode name. [Example] 1N4148 TPA2 © - © i- © B. Indicates the taping specifications Indicates JEDEC registration no.


    OCR Scan     		PDF DO-35 1N4148 Reel Taping Specification JEDEC

    TIM1414-4LA-371

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


    OCR Scan     		PDF TIM1414-4LA-371 TIM1414-4LA-371

    2SC994

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC994 Unit in mm VHF BANO POWER AMPLIFIER APPLICATIONS. 09.Z9UAX. FEATURES : Output Power '• Po=0.95W Min. ( f=l75MHz, VCC=13.5V, Pi=40mW ) Í¿Q.45 05 .C 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING vCBO


    OCR Scan     		PDF 2SC994 l75MHz, 100mA 175MHz, -30pF 175MHZ 2SC994

    GT15Q101

    Abstract: No abstract text available
    Text: GT15Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm #3 2±0.2 MOTOR CONTROL APPLICATIONS. I5.9MAX . High Input Impedance . High Speed : tf= 0 . 5ys Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode I1AXIMUM RATINGS (Ta=25°C) SYMBOL


    OCR Scan     		PDF GT15Q101 2-16C1C GT15Q101

    thyristor

    Abstract: reverse-conducting thyristor Gate Turn-off Thyristor Thyristor triac
    Text: 7. GRAPHICAL SYMBOL Type P Gate Thyristor SCR Bi Directional Triode Thyristor (Triac) Reverse-Conducting Thyristor Gate Turn-off Thyristor Graphical Symbol - ^ T,- 1 - - N-Gate Thyristor (PUT) 84 V T'


    OCR Scan     		PDF

    2SA1302

    Abstract: Toshiba 2Sa1302
    Text: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL


    OCR Scan     		PDF 2SA1302 2SC3281 2-21F1A 2SA1302 Toshiba 2Sa1302

    1SS239

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL SCHO TTKY BARRIER TY P E DIODE C A T V /U H F /V H F MIXER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range Vr Ip Tj Tstg RATING 6 30 125


    OCR Scan     		PDF 1SS239 1SS239

    TA8622N

    Abstract: No abstract text available
    Text: TOSHIBA TA8622N TENTATIVE T V S O U N D M P X D E M O D U L A T O R F O R U.S.A . S Y S T E M . Internal filters for SUB and SAP . SUB/SAP display . Space Wide . Volume, balance, bass, treble control M A X IM U M R A T IN G S T a = 2 5 ° C ITEM SYMBOL


    OCR Scan     		PDF TA8622N z/100% TA8622N

    F585

    Abstract: No abstract text available
    Text: February 6, 1997 TIM5964-16L-151 1•RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Pow er at 1dB SYMBOL CONDITION P id B Ta= 25 °C MIN. TYP. MAX. UNIT 41.5 42.5 6.0 7.0 — dBm Com pression Point Pow er G ain at 1dB G id B Com pression Point V d s = 10V


    OCR Scan     		PDF TIM5964-16L-151 TIM5964- 16L-151 2-16G1B) F585

    Untitled

    Abstract: No abstract text available
    Text: Apr. 1998 T IM 3 7 4 2 -4 5 S L -3 4 1 1. RF PERFORMANCE SPECIFICATIONS f Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at 1dB 46.0 46.5 PldB — dBm Compression Point VDS= 10V GldB — Power Gain at 1dB 10.0 f=3.3-3.6GHz —


    OCR Scan     		PDF TIM3742-45SL-34I 3600mfl,

    TC40H051P

    Abstract: No abstract text available
    Text: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA TiMnUflRI P/F I U l U n U w l l / l TC40H051 C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC DUAL A N D -O R -IN V E R T GATE TRUTH TA B LE CHARACTERISTIC Supply Voltage Input Voltage SYMBOL RATING UNIT VDD Vss-0.5 ^Vss+10


    OCR Scan     		PDF TC40H051 TC40H051P/F TC40H051P

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2414 SM U nit in mm HIGH CURRENT SW ITCH IN G APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. • Low Saturation Voltage : V q e (s a t)= 0.5V (M ax.) (at Ic= 4A ) M A X IM U M R ATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SD2414

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO


    OCR Scan     		PDF 2SC3666 100mA 800mA 800mA,

    ic 748

    Abstract: 2SC4688
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage


    OCR Scan     		PDF 2SC4688 ic 748 2SC4688

    2SC2319

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2319 Unit in mm HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. FEATURES : . Hide Band and High Gain for Class A Amplifier. . Excellent Cross Modulation Characteristics. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING


    OCR Scan     		PDF 2SC2319 100mA 250MHz 800MHz 2SC2319

    2SH14 toshiba

    Abstract: toshiba 2sh13 2SH21 2SH13 2SH13 TOSHIBA 2SH14 2SH20 tn41a
    Text: _ 9097250 TOSHIBA 39C 02370 < D IS C R E T E / O P T O D 'T- 3 5 ~-L.i T R IG G E R D E V IC E FOR T H Y R IS T O R TOSHIBA { D I S C R E T E / O P T 0} P U T 1 TN41A, TN41B 1 3T Ï Ë J t OITSSD 0Q0S37D 7 I ~ Unit in m M AXIM UM RATINGS CHARACTERISTIC SYMBOL


    OCR Scan     		PDF TN41A, TN41B 100/is 10jus 2SH13 2SH14 2SH20 2SH21 VB2B10 2SH13, 2SH14 toshiba toshiba 2sh13 2SH21 2SH13 TOSHIBA tn41a

    Untitled

    Abstract: No abstract text available
    Text: 2SC4793 SILICON NPN EPITAXIAL TYPE POW ER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : fr=100M H z Typ. Complementary to 2SA1837 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC4793 2SA1837 100mA 500mA, 500mA

    2SB863

    Abstract: 2SD1148
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB863 o POWER AMPLIFIER APPLICATIONS. Unit in mm 159 M AX. 0O.2ÌO.2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL


    OCR Scan     		PDF 2SB863 2SD1148 -140V, -50mA, 2SB863 2SD1148

    Untitled

    Abstract: No abstract text available
    Text: UT54ACS253/UT54ACTS253 a d v a n c e i n fo r m a t i o n R ad iatio n -H ard e n e d D u a l 4 -In p u t M u ltiplex e rs FEATURES LOGIC SYMBOL • Permits multiplexing from N lines to 1 line • Performs parallel-to-serial converstion • 1.2 1 radiation-hardened CMOS


    OCR Scan     		PDF UT54ACS253/UT54ACTS253 16-pin 16-lead UT54ACS253 UT54ACTS253

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm


    OCR Scan     		PDF TIM1414-7-252 IGS---72pA

    S1377

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE S1377 Unit in ram MEDIUM POWER AMPLIFIER APPLICATIONS. 9.9MAX. 0Z.2±aZ TV HORIZONTAL DRIVER APPLICATIONS. FEATURES: . High Collector to Emitter Breakdown Voltage -• Vcfi0=250V MAXIMUM RATINGS Ta =25°C CHARACTERISTIC SYMBOL


    OCR Scan     		PDF S1377 100mA 200mA, S1377

    Untitled

    Abstract: No abstract text available
    Text: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S 891C - A U G U S T 1996 - R EVISED O C TO BE R 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.


    OCR Scan     		PDF TMS418160A 16-BIT TMS418160As 1024-Cycle R-PDSO-J42) 18160A

    s27c64

    Abstract: TMS27C64JL
    Text: TM S27C64 65,536-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TM S27PC64 65,536-BIT PROGRAMMABLE READ-ONLY MEMORY NOVEM BER 1 9 6 5 - REVISED APRIL 1 9 8 8 This Data Sheet is Applicable to A ll TMS27C64s and TMS27PC64s Symbolized with Code " A " as Described on Page 12.


    OCR Scan     		PDF S27C64 536-BIT S27PC64 TMS27C64s TMS27PC64s /PC64-1 1007C/PC64 770C1 TMS27C64JL

    WO-61

    Abstract: No abstract text available
    Text: 9097250 TOSHIBA DISCRETE/OPTO SSR (ZERO-CROSS TYPE) TOSHIBA {DISCRETE/OPTO} 1>FJ Í D ^ a S D □0DE37b ñ 600V 2A TSS2J44 Unit in na C H A R A C TER ISTIC SYMBOL a O T SS2G 44 T SS2H 44 T S S 2J44 RMS On-state Current P e ii O at C jd e S irfe O r i U t C t n o t IKa-Rcyctitrre}


    OCR Scan     		PDF 0DE37b TSS2J44 100il WO-61