F100K
Abstract: SY100S304 SY100S304FC SY100S304JC SY100S304JCTR
Text: QUINT AND/NAND GATE FEATURES SY100S304 DESCRIPTION • Max. propagation delay of 1050ps ■ IEE min. of –60mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity ■ Internal 75KΩ input pull-down resistors
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SY100S304
1050ps
F100K
24-pin
28-pin
SY100S304
SY100S304FC
F24-1
SY100S304JC
J28-1
F100K
SY100S304FC
SY100S304JC
SY100S304JCTR
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Marking D1c
Abstract: F100K SY100S304 SY100S304JC SY100S304JCTR
Text: QUINT AND/NAND GATE Micrel, Inc. FEATURES SY100S304 SY100S304 DESCRIPTION • Max. propagation delay of 1050ps ■ IEE min. of –60mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity
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Original
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PDF
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SY100S304
1050ps
F100K
28-pin
SY100S304
M9999-042307
Marking D1c
F100K
SY100S304JC
SY100S304JCTR
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Untitled
Abstract: No abstract text available
Text: QUINT AND/NAND GATE Micrel, Inc. FEATURES SY100S304 SY100S304 DESCRIPTION • Max. propagation delay of 1050ps ■ IEE min. of –60mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity
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Original
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PDF
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SY100S304
1050ps
F100K
24-pin
28-pin
SY100S304
M9999-032206
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d2b 1
Abstract: SY100S304 F100K SY100S304FC SY100S304JC SY100S304JCTR
Text: QUINT AND/NAND GATE FEATURES SY100S304 FINAL DESCRIPTION • Max. propagation delay of 1050ps ■ IEE min. of –60mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity ■ Internal 75KΩ input pull-down resistors
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Original
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PDF
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SY100S304
1050ps
F100K
24-pin
28-pin
SY100S304
0S304FC
F24-1
SY100S304JC
J28-1
d2b 1
F100K
SY100S304FC
SY100S304JC
SY100S304JCTR
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Untitled
Abstract: No abstract text available
Text: « SYNERGY QUINT AND/NAND GATE SY100S304 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1050ps Ie e The SY100S304 is an ultra-fast quint AND/NAND gate designed for use in high-perform ance ECL system s. This device also features a Function F output which is the wireNOR of the AND gate outputs. The inputs on the device
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OCR Scan
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SY100S304
1050ps
SY100S304
75Ki2
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Untitled
Abstract: No abstract text available
Text: * QUINT AND/NAND GATE SYNERGY SY100S304 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1050ps The SY100S 304 is an ultra-fast quint AN D /N AN D gate designed for use in high-perform ance ECL system s. This device also fe a ture s a Function F output which is the w ireNOR of the AND gate outputs. T he inputs on the device
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SY100S304
1050ps
SY100S
75KC1
TDD13B1
SY100S304DC
D24-1
SY100S304FC
F24-1
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Untitled
Abstract: No abstract text available
Text: * QUINT AND/NAND GATE SYNERGY SY100S304 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1050ps Iee min. o f-6 0 m A Extended supply voltage option: V ee = -4 .2 V to -5 .5 V The SY100S304 is an ultra-fast quint AND/NAND gate designed for use in high-performance ECL systems. This
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OCR Scan
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PDF
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SY100S304
1050ps
SY100S304
75Ki2
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