Untitled
Abstract: No abstract text available
Text: 6mm FLANGE BASED LED LAMP BLFA064MGCK-6V Features !BUILT-IN MEGA GREEN Description CURRENT LIMITING RESISTOR FOR The Mega Green source color devices are made with DH DIRECT APPLICATION OF DIFFERENT ACROSS InGaAlP on GaAs substrate Light Emitting Diode. CURRENT.
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BLFA064MGCK-6V
CDA0914
APR/07/2002
BLFA064MGCK-6V
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Untitled
Abstract: No abstract text available
Text: 5mm FLANGE BASED LED LAMP BLFA054MGCK-6V Features !BUILT-IN MEGA GREEN Description CURRENT LIMITING RESISTOR FOR The Mega Green source color devices are made with DH DIRECT APPLICATION OF DIFFERENT ACROSS InGaAlP on GaAs substrate Light Emitting Diode. CURRENT.
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BLFA054MGCK-6V
CDA0888
APR/06/2002
BLFA054MGCK-6V
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sy 320 diode
Abstract: No abstract text available
Text: 4.0x3.0mm SMD CHIP LED LAMP PRELIMINARY SPEC KPEKA-4030SEC Features Description !4.0mmx3.0mm SMT LED, 2.65mm THICKNESS. The Super Bright Orange source color devices !LOW POWER CONSUMPTION. are made with DH InGaAlP on GaAs substrate !WIDE VIEWING ANGLE. Light Emitting Diode.
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KPEKA-4030SEC
500PCS
DSAC2466
JAN/08/2003
KPEKA-4030SEC
sy 320 diode
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MBR20150C DIODE Preliminary SCH OT T K Y BARRI ER RECT I FI ER ̈ DESCRI PT I ON The UTC MBR20150C is a Schottky Barrier Rectifier with high junction temperature capacity. ̈ FEAT U RES * Good trade off between leakage current and forward voltage drop
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MBR20150C
MBR20150C
MBR20150CL-TA3-T
MBR20150CG-TA3-T
MBR20150CL-TQ2-T
MBR20150CG-TQ2-T
MBR20150CL-TQ2-R
MBR20150CG-TQ2-R
O-220
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAT54SDW Preliminary DIODE SCH OT T K Y BARRI ER DU AL DI ODES 4 ̈ 5 DESCRI PT I ON 6 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
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BAT54SDW
OT-363
BAT54SDWL-AL6-R
BAT54SDWG-AL6-R
QW-R601-055
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAT54TDW DIODE SCH OT T K Y BARRI ER DU AL DI ODES 4 ̈ 5 DESCRI PT I ON 6 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
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BAT54TDW
OT-363
BAT54TDWL-AL6-R
BAT54TDWG-AL6-R
QW-R601-062
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAT54ADW Preliminary DIODE SCH OT T K Y BARRI ER DU AL DI ODES 4 ̈ 5 DESCRI PT I ON 6 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
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BAT54ADW
OT-363
BAT54ADWL-AL6-R
BAT54ADWG-AL6-R
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAT54DW Preliminary DIODE SCH OT T K Y BARRI ER DU AL DI ODES 4 ̈ 5 DESCRI PT I ON 6 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
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BAT54DW
OT-363
BAT54DWL-AL6-R
BAT54DWG-AL6-R
QW-R601-061
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAT54CDW Preliminary DIODE SCH OT T K Y BARRI ER DU AL DI ODES 4 ̈ 5 DESCRI PT I ON 6 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
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BAT54CDW
OT-363
BAT54CDWL-AL6-R
BAT54CDWG-AL6-R
QW-R601-056
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAT54SW DIODE SCH OT T K Y BARRI ER DU AL DI ODES ̈ DESCRI PT I ON Planar Schottky barrier diodes are encapsulated in the SOT-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
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BAT54SW
OT-323
BAT54SWL-AL3-R
BAT54SWG-AL3-R
QW-R601-054
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAT54W DIODE SCH OT T K Y BARRI ER DI ODES ̈ DESCRI PT I ON Planar Schottky barrier diodes are encapsulated in the SOT-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
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BAT54W
OT-323
BAT54WL-AL3-R
BAT54WG-AL3-R
QW-R60at
QW-R601-058
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAT54CW DIODE SCH OT T K Y BARRI ER DU AL DI ODES ̈ DESCRI PT I ON Planar Schottky barrier diodes are encapsulated in the SOT-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
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BAT54CW
OT-323
BAT54CWL-AL3-R
BAT54CWG-AL3-R
QW-R601-050
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sy 170
Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170
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N4001.
sy 170
SY 356
SY 360 05
sy 710
sy 360
Dioden SY 250
byx 21
SY 320
sy710
Halbleiterbauelemente DDR
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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200JH21
Abstract: toshiba 3-60B1A
Text: -_ 9097250 TOSHIBA 39C 02245 C D IS C R E T E / O P T O 0 7"- 0 3 - 2 3 FAST RECOVERY DIODE 0 SHIBA { D I S C R E T E / O P T 0> 200JH21 ln DËJ'iD^aSG 0002545 4 Unit in 600V 200A MAXIMUM RATINGS CHARACTERISTIC SY M B O L RATING UN IT Repetitive P eak R everse Voltage
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200JH21
30QJH21
Repeti25
toshiba 3-60B1A
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sy 320 diode
Abstract: No abstract text available
Text: P h ilip s Se m ico n d u cto rs P re lim in sry specification Schottky barrier diodes FEA T U R ES BAT54W series Q U IC K R E F E R EN C E DATA • Ultra-fast switching speed • Low forward voltage SY M B O L PA RAM ET ER CO N DITIO N S UNIT MAX. Per diode
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BAT54W
SA891
M80O46
sy 320 diode
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sy 320 diode
Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Text: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren
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sy 320 diode
Abstract: No abstract text available
Text: SEM ICONDUCTOR KTX403U TE CHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SW ITC H IN G A PPLICATION. LOW V O LT A G E HIGH SPEED SWITCHING. FEA T U RE S • Including tw o T R , D iode devices in USV. (U ltra Super M ini type w ith 5 leads)
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KTX403U
sy 320 diode
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6P45S
Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR | 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D
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TGLIO395
III/I8/379
6P45S
6N23P
6P14P
Selenstab 5 GE 200 AF Hochsp.leitg
6F1P
service-mitteilungen
D814D
D814A
hsk 103
taa550
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diode sy 345
Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989
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III/18/379
diode sy 345
diode SY 192
sd 339
sy 320 diode
SD 338
SY 345
KT 829 b
k3451
KT 828 A
SD337
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A5J diode
Abstract: BO-120 DI200 M109 sf transistor 1DI200M-120 1di200
Text: 1 DI 2 0 0 M -1 20 200a - J U L - J i , P O W E R T R A N S IS T O R M O D U LE : Features • • h F E ^ ffii' • 7 '; — • High Arm Short Circuit Capability High DC Current Gain — KJ*3 Including Free Wheeling Diode Insulated Type : Applications
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1DI200M-1
E82988
A5J diode
BO-120
DI200
M109
sf transistor
1DI200M-120
1di200
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SW22CXC320
Abstract: C320 CXC320 westcode diodes C-I-70C
Text: WESTCODE SEMICONDUCTORS BSE ^70^=135 D DD02S17 5 • lilESB T - o i - ¿ 3 T E C H N IC A L PU B LIC A T IO N WESTCODE SEMICONDUCTORS DC 320 IS S U E 2 May, 1989 Ceramic Capsule Silicon Diodes Type CXC 320 620 amperes average: up to2400 volts VRRM R A T IN G S
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ci70c1cÃ
OOOES17
CXC320
to2400
SW22CXC320
C320
westcode diodes
C-I-70C
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT BAT54WS SCHOTTKY DIODES SOD-323 FEATURES ♦ These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT54WS
OD-323
OD-323
300ns,
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L-442
Abstract: l43d L442
Text: SOT23 SILICON EPITAXIAL SOHOTTKY BARRIER DIODES ISSUE 1 - SEPTEMBER 1995 , 1 o c r ic c I ' O 1 A i f 2 3 t 3 \ 2 3 2 BAT54 BAT54A BAT54S BAT54C SINGLE COMMON ANODE SERIES COMMON CATHODE Pin Configuration L4Z L42 L44 L43 Partmarking Detail D evice T ype FEATURES: Low VF & High Current Capability
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BAT54
BAT54A
BAT54S
BAT54C
100mA
L-442
l43d
L442
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