SXA289 Search Results

SXA289 Price and Stock

Filter by Manufacturer


SIRENZA MICRODEVICES INC SXA-289
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SXA-289		135			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SIRENZA MICRODEVICES INC SXA-289-BLK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SXA-289-BLK		135			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sirenza Microdevices SXA-289 IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,TO-243,3PIN,PLASTIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SXA-289		130			1 $4 10 $4 100 $2 1000 $2 10000 $2	Buy Now
	SXA-289		36			1 $9.9 10 $7.26 100 $6.6 1000 $6.6 10000 $6.6	Buy Now
Stanford Electronics SXA-289 IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,TO-243,3PIN,PLASTIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SXA-289		73			1 $9.9 10 $9.9 100 $6.105 1000 $6.105 10000 $6.105	Buy Now

SXA289 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SXA-289		Sirenza Microdevices	5-2000 MHz Medium Power GaAs HBTAmplifier		Original	PDF
SXA-289		Stanford Microdevices	5-2000 MHz medium power GaAs HBT amplifier		Original	PDF

SXA289 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
XA2 MMIC Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	PDF	SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No SIRENZA Sirenza C4 marking
Sirenza amplifier SOT-89 Marking Abstract: .XA2 Text: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth	Original	PDF	SXH-189 SXH-189 SXA-289 016REF 118REF 041REF EDS-101247 Sirenza amplifier SOT-89 Marking .XA2
XA2 MMIC Abstract: Xa2 TRANSISTOR Text: Preliminary Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular	Original	PDF	SXA-289 SXA-289 EDS-100622 XA2 MMIC Xa2 TRANSISTOR
Xa2 TRANSISTOR Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	PDF	SXA-289 SXA-289 016REF 118REF 041REF EDS-100622 Xa2 TRANSISTOR XA2 MMIC Sirenza amplifier SOT-89 marking XA2 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
Xa2 TRANSISTOR Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ Text: Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	PDF	SXA-289 016REF 118REF 041REF EDS-100622 Xa2 TRANSISTOR transistor 289 MMIC "SOT 89" marking rf power amplifier 850 MHZ
ze 003 driver Abstract: SXA-289-TR1 ze 003 SXA-289 Text: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which	Original	PDF	SXA-289 SXA-289 EDS-100622 ze 003 driver SXA-289-TR1 ze 003
SXA-289 Abstract: No abstract text available Text: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces	Original	PDF	SXA-289 SXA-289 EDS-100622
SXA 900 MHz Abstract: SXA-289 SXL-189-EB SXL-189-TR1 SXL-189-TR2 Text: Preliminary Product Description SXL-189 Stanford Microdevices’ SXL-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces	Original	PDF	SXL-189 SXL-189 110mA 1000pF 100pF SXA-289 SXA 900 MHz SXA-289 SXL-189-EB SXL-189-TR1 SXL-189-TR2
Untitled Abstract: No abstract text available Text: Preliminary Product Description SXL-189 Stanford Microdevices’ SXL-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces	Original	PDF	SXL-189 SXL-189 1000pF 100pF 100pF 110mA SXA-289
XA2 MMIC Abstract: MPO-100136 TOP MARKING C1 ROHM lot No Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	PDF	SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No
Untitled Abstract: No abstract text available Text: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces	Original	PDF	SXA-289 SXA-289
XA2 MMIC Abstract: No abstract text available Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular	Original	PDF	SXA-289 SXA-289 100mA EDS-100622 XA2 MMIC
SXA-289 Abstract: No abstract text available Text: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces	Original	PDF	SXA-289 SXA-289
Untitled Abstract: No abstract text available Text: Product Description SXA-289 Stanford M icrodevices’ SXA-289 am plifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. These HBT am plifiers are fabricated using m olecular beam epitaxial growth technology which produces	OCR Scan	PDF	SXA-289 SXA-289