SUMITOMO METAL Search Results

SUMITOMO METAL Result Highlights (5)

Part	Manufacturer	Description
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL

SUMITOMO METAL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Sumitomo Metal Abstract: diodes h7d A504 piezoelectric ultrasonic Sumitomo 1000 KR Electronics spem 1012C Ultrasonic Piezoelectric Text: SUMITOMO Piezoelectric Products May 2003 Sumitomo Metal SMI Electronics Devices Inc. 1 SPEM Sumitomo PiezoElectric Materials 製品群 Products 圧電材料微小位置決め用積層型アクチュエ−タ− バイモルフ型アクチュエ−タ−	Original	103kg/m3 Sumitomo Metal diodes h7d A504 piezoelectric ultrasonic Sumitomo 1000 KR Electronics spem 1012C Ultrasonic Piezoelectric	PDF
sumitomo 6600 Abstract: sumitomo epoxy 6600 4835 sumitomo EME 6600 sumitomo epoxy 8361H CY74FCT2245ATQC CY74FCT2646ATQC CY7C199-12VC JESD22 Text: Cypress Semiconductor Qualification Report QTP# 99101 VERSION 1.0 May, 1999 Sumitomo EME 6600CR Molding Compound Cypress Philippines CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor Quality and Reliability Department Cypress Semiconductor	Original	6600CR 6600CR 85C/85% CY7C63101A-OC CY74FCT2646ATQC CY74FCT2245ATQC 619903565M1 CY7C1399-VC CY62256V-VC sumitomo 6600 sumitomo epoxy 6600 4835 sumitomo EME 6600 sumitomo epoxy 8361H CY74FCT2245ATQC CY74FCT2646ATQC CY7C199-12VC JESD22	PDF
SUMITOMO EME6600 Abstract: EME6600 Compound 6600cs 3818 MIL-STD-883c-method 1010 6600CS Text: Cypress Semiconductor Package Qualification Report QTP# 99234 VERSION 1.1 September 2000 52-208-pin Plastic Quad Flatpack Package PQFP Sumitomo 6600CS molding Compound ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director	Original	52-208-pin 6600CS 52-208-Lead N52D/N208L 52/208-pin CY82C693-NC 619909669B SUMITOMO EME6600 EME6600 Compound 6600cs 3818 MIL-STD-883c-method 1010	PDF
sumitomo epoxy Abstract: 7C109A CY7C109 EME TI Text: Qualification Report January 1997 QTP# 95483, Version 1.0 SUMITOMO EME-9300 Low Alpha Molding Compound PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part	Original	EME-9300 CY7C109 32-pin, 400-mil CY7C109) 7C109A PassivaY7C109-VC CY7C109-VC sumitomo epoxy 7C109A CY7C109 EME TI	PDF
EME 7320 Abstract: Ablestik Ablestik 8361 7320 a144g SUMITOMO EME G A100A CY7C09579V-AC JESD22 ASE Cypress Text: Cypress Semiconductor Mold Compound Qualification Report QTP# 002403 VERSION 1.0 January, 2001 Sumitomo EME 7320 Mold Compound, MSL3 for DCD-Thin Quad Flat Pack, TQFP ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director	Original	160-lead CY7C375I-AC EME 7320 Ablestik Ablestik 8361 7320 a144g SUMITOMO EME G A100A CY7C09579V-AC JESD22 ASE Cypress	PDF
QMI 509 epoxy Abstract: SUMITOMO eme-6600hr 6600HR SOJ package MSL QMI 509 epoxy datasheet CY7C63001A-SC JESD22 EME6600HR mold compound EME 6600HR Text: Cypress Semiconductor Package Qualification Report QTP# 023401 VERSION 2.0 GI July, 2004 32-lead SOIC package using Sumitomo EME 6600HR Mold Compound, MSL1 Cypress Philippines CML-R CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Principal Reliability Engineer	Original	32-lead 6600HR 28-44lead 635mils 01BLL-SI 610221877M CY62128BLL-SI QMI 509 epoxy SUMITOMO eme-6600hr SOJ package MSL QMI 509 epoxy datasheet CY7C63001A-SC JESD22 EME6600HR mold compound EME 6600HR	PDF
EGN13B200IV-R Abstract: F14G JESD22-A114 Text: EGN13B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 170W min. @ Pin=4W (36dBm) •High Efficiency: 55%(typ.) @ Pin=4W (36dBm) DESCRIPTION Sumitomo GaN-HEMT EGN13B200IV-R offers high power, high	Original	EGN13B200IV-R 36dBm) EGN13B200IV-R F14G JESD22-A114	PDF
JESD22-A114 Abstract: No abstract text available Text: EGN28B100IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 120W min. @ Pin=6.3W (38dBm) •High Efficiency: 56%(typ.) @ Pin=6.3W (38dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high	Original	EGN28B100IV-R 38dBm) EGN28B100IV-R JESD22-A114	PDF
EGN28B400M1B-R Abstract: JESD22-A114 Sumitomo 1076 Text: EGN28B400M1B-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 400W min. @ Pin=25W (44dBm) •High Efficiency: 50%(typ.) @ Pin=25W (44dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B400M1B-R offers high power, high	Original	EGN28B400M1B-R 44dBm) EGN28B400M1B-R JESD22-A114 Sumitomo 1076	PDF
JESD22-A114 Abstract: Device Innovations Text: EGN29B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 200W min. @ Pin=15.8W (42dBm) •High Efficiency: 53%(typ.) @ Pin=15.8W (42dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high	Original	EGN29B200IV-R 42dBm) EGN28B100IV-R JESD22-A114 Device Innovations	PDF
EGN28B200IV-R Abstract: JESD22-A114 S-Band Radar Text: EGN28B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 230W min. @ Pin=12.6W (41dBm) •High Efficiency: 53%(typ.) @ Pin=12.6W (41dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high	Original	EGN28B200IV-R 41dBm) EGN28B100IV-R EGN28B200IV-R JESD22-A114 S-Band Radar	PDF
sumitomo CWDM Abstract: L-band laser Text: Wide Temperature -40 °C~95 °C Operation of Uncooled 1610 nm DFB Laser for CWDM Application Atsushi Matsumura, Takeshi Kishi, Michio Murata and Takashi Kato Sumitomo Electric Industries, Ltd.,1, Taya-cho, Sakae-ku, Yokohama, 244-8588, Japan, Email: [email protected]	Original		PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME	PDF
ELPIDA Abstract: Elpida Memory NEC-Hitachi Memory working principle scanner TSOP II elpida Yaesu sagami DRAM elpida Text: TOPICS INTRODUCTION TO Elpida Memory, Inc. FORMERLY NEC-Hitachi Memory, Inc. Launch of World’s First 0.13 µm 256 Mb DRAM Hidemori Inukai Corporate Name Address Head office Sumitomo Seimei Yaesu Bldg. 3F, 2-1 Yaesu 2-chome, Chuo-ku, Tokyo Development center	Original	66-pin ELPIDA Elpida Memory NEC-Hitachi Memory working principle scanner TSOP II elpida Yaesu sagami DRAM elpida	PDF

F0513 Abstract: F0513005L LM324 sumitomo Laser diode driver Text: SUMITOMO ELECTRIC INDUSTRIES, LTD. 01.02.21 ♦ Features • Up to 3 Gbps high speed operation • Positive thermal coefficient of modulation current • Differential ECL compatible interface • -5.2 V single power supply • Up to 50 mA p-p modulation current	Original	18-terminal F0513005L F0513005L F0513 LM324 sumitomo Laser diode driver	PDF
InP Laser Buried Heterostructure Abstract: Laser InP buried heterostructure InP Laser BH laser InP BH Laser InP MF50 10 gb laser diode Text: Highly Reliable AlGaInAs Buried Heterostructure Lasers for Uncooled 10Gb/s Direct Modulation N. Ikoma, T. Kawahara, N. Kaida, M. Murata, A. Moto, and T. Nakabayashi Transmission Devices R&D Laboratories, Sumitomo Electric Industries ltd.,1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan	Original	10Gb/s 000hours) 10-Gb/s InP Laser Buried Heterostructure Laser InP buried heterostructure InP Laser BH laser InP BH Laser InP MF50 10 gb laser diode	PDF
MIL-DTL-27500 Abstract: M22759/34 m27500 transfer impedance MIL-W-81381 M27500- twisted pair MIL-W-22759/44 m27500 m27500 sd XLETFE MIL-W-22759/34 Text: Aerospace Wire and Cable Mil-W-22759 Mil-DTL-22759 Mil-DTL-27500 JWXLT Lightweight XLTFE Specialty Products JUDD WIRE INC. A member of the Sumitomo Electric Industries group of companies JUDD WIRE INC. Manufacturers of Superior Insulation Systems for Electrical Aerospace Wire and Cable	Original	Mil-W-22759 Mil-DTL-22759 Mil-DTL-27500 Mil-W-22759/32 MIL-DTL-27500 M22759/34 m27500 transfer impedance MIL-W-81381 M27500- twisted pair MIL-W-22759/44 m27500 m27500 sd XLETFE MIL-W-22759/34	PDF
0.1micro farad capacitor datasheet Abstract: F0321818M F0321818Q RL-50 GAAS FET AMPLIFIER for optical receiver Text: Preliminary SUMITOMO ELECTRIC INDUSTRIES, LTD. 01.02.19 ♦ Features F0321818Q 2 GHz Bandwidth • -5 V single power supply • 20 dB typical gain • 2.0 GHz typical -3 dB cutoff frequency • On-chip matching to 50 Ω • 55 mA typical operating current	Original	F0321818Q 20-lead F0321818Q F0321818Q. F0321818M 0.1micro farad capacitor datasheet RL-50 GAAS FET AMPLIFIER for optical receiver	PDF
F0515 Abstract: F0515005L 18-terminal LM324 laser APC CIRCUIT Text: F0515005L 5 Gbps Laser Diode Driver SUMITOMO ELECTRIC INDUSTRIES, LTD. 00.02.24 ♦ Features F0515005L 5 Gbps NRZ Data Rate • Up to 5 Gbps high speed operation • Typical 110 psec rise and fall time • Differential ECL compatible interface • -5.2 V single power supply	Original	F0515005L 18-terminal F0515005L F0515 LM324 laser APC CIRCUIT	PDF
F0321818M Abstract: No abstract text available Text: SUMITOMO ELECTRIC INDUSTRIES, LTD. 01.02.19 ♦ Features • +5 V single power supply • 20 dB typical gain • 2.0 GHz typical -3 dB cutoff frequency • On-chip matching to 50 Ω • 55 mA typical operating current • Low-cost 18-lead MFP package • Differential input and output	Original	18-lead F0321818M F0321818M F0321818M.	PDF
EMM5068VU Abstract: MMIC MAR-6 EMM5068VUT EMM5068 MAR-2 MMIC RO4003 95GHZ 21373 power amplifier mmic EMM506 Text: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages	Original	EMM5068VU EMM5068VU MMIC MAR-6 EMM5068VUT EMM5068 MAR-2 MMIC RO4003 95GHZ 21373 power amplifier mmic EMM506	PDF
EMM5075VU Abstract: EMM5075 EMM5075VUT Rogers RO4003 RO4003 power amplifier mmic Text: EMM5075VU Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 12.7~15.4GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) Device DESCRIPTION	Original	EMM5075VU EMM5075VU 1200mA EMM5075 EMM5075VUT Rogers RO4003 RO4003 power amplifier mmic	PDF
EMM5832VU Abstract: EMM5832 k-band amplifier C 1162 RO4003 8-12 GHz power amplifier mmic 40 dBm power amplifier mmic Text: EMM5832VU K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=31.0dBm typ. ・High Linear Gain: GL=20.0dB (typ.) ・Broad Band: 21.2~26.5GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage	Original	EMM5832VU EMM5832VU 800mA EMM5832 k-band amplifier C 1162 RO4003 8-12 GHz power amplifier mmic 40 dBm power amplifier mmic	PDF
EMM5837V1BT Abstract: power amplifier mmic Text: EMM5837V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2～23.6GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5837V1B is a MMIC amplifier that contains a four-stage	Original	EMM5837V1B EMM5837V1B EMM5837V1BT power amplifier mmic	PDF

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SUMITOMO METAL Search Results

SUMITOMO METAL Result Highlights (5)

SUMITOMO METAL Datasheets Context Search

Sumitomo Metal

sumitomo 6600

SUMITOMO EME6600

sumitomo epoxy

EME 7320

QMI 509 epoxy

EGN13B200IV-R

JESD22-A114

EGN28B400M1B-R

JESD22-A114

EGN28B200IV-R

sumitomo CWDM

FLL57MK

ELPIDA

F0513

InP Laser Buried Heterostructure

MIL-DTL-27500

0.1micro farad capacitor datasheet

F0515

F0321818M

EMM5068VU

EMM5075VU

EMM5832VU

EMM5837V1BT