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    Vishay Siliconix SUD50N025-06P-E3

    MOSFET N-CH 25V 78A TO252
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    Vishay Intertechnologies SUD50N025-06P-E3

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    SUD50N025 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUD50N025-05P Vishay Siliconix N-Channel 25-V (D-S) MOSFET Original PDF
    SUD50N025-06P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 78A TO252 Original PDF
    SUD50N025-09BP-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 62A TO252 Original PDF

    SUD50N025 Datasheets Context Search

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    sud*50n025-06p

    Abstract: SUD50N025-06P-E3
    Text: SUD50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5


    Original     		PDF SUD50N025-06P O-252 SUD50N025-06P--E3 18-Jul-08 sud*50n025-06p SUD50N025-06P-E3

    sud*50n025 09bp

    Abstract: SUD50N025-09BP
    Text: SUD50N025-09BP New Product Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0086 @ VGS = 10 V 62 0.012 @ VGS = 4.5 V 52 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 18 5 nC 18.5


    Original     		PDF SUD50N025-09BP O-252 SUD50N025-09BP--E3 18-Jul-08 sud*50n025 09bp SUD50N025-09BP

    Untitled

    Abstract: No abstract text available
    Text: SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC COMPLIANT


    Original     		PDF SUD50N025-4m5P O-252 SUD50N025-4m5P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    sud*50n025-06p

    Abstract: SUD50N025-06P SUD50N025-06P-E3
    Text: SUD50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5


    Original     		PDF SUD50N025-06P O-252 SUD50N025-06P--E3 S-50934--Rev. 09-May-05 sud*50n025-06p SUD50N025-06P SUD50N025-06P-E3

    sud*50n025 09bp

    Abstract: sud*50n025
    Text: SUD50N025-09BP New Product Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0086 @ VGS = 10 V 62 0.012 @ VGS = 4.5 V 52 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 18 5 nC 18.5


    Original     		PDF SUD50N025-09BP O-252 SUD50N025-09BP--E3 51449--Rev. 01-Aug-05 sud*50n025 09bp sud*50n025

    Untitled

    Abstract: No abstract text available
    Text: SUD50N025-09BP New Product Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0086 @ VGS = 10 V 62 0.012 @ VGS = 4.5 V 52 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 18 5 nC 18.5


    Original     		PDF SUD50N025-09BP O-252 SUD50N025-09BPâ 08-Apr-05

    CA15B

    Abstract: No abstract text available
    Text: New Product SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC


    Original     		PDF SUD50N025-4m5P O-252 SUD50N025-4m5P-E3 08-Apr-05 CA15B

    TB-17

    Abstract: SUD50N025-05P
    Text: SUD50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS


    Original     		PDF SUD50N025-05P O-252 SUD50N025-05P--E3 18-Jul-08 TB-17 SUD50N025-05P

    CA15B

    Abstract: No abstract text available
    Text: SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC COMPLIANT


    Original     		PDF SUD50N025-4m5P O-252 SUD50N025-4m5P-E3 18-Jul-08 CA15B

    SD 338

    Abstract: SUD50N025-05P
    Text: SPICE Device Model SUD50N025-05P Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N025-05P 18-Jul-08 SD 338 SUD50N025-05P

    sud*50n025

    Abstract: 8464 3882 power 7501 9377 sud50n025 AN609 SUD50N025-06P
    Text: SUD50N025-06P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD50N025-06P AN609 18-Sep-07 sud*50n025 8464 3882 power 7501 9377 sud50n025

    MOSFET 4407

    Abstract: 4407 mosfet sud*50n025 09bp 4407 4712 CIRCUIT 4407 sud*50n025 AN609 SUD50N025-09BP
    Text: SUD50N025-09BP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD50N025-09BP AN609 18-Sep-07 MOSFET 4407 4407 mosfet sud*50n025 09bp 4407 4712 CIRCUIT 4407 sud*50n025

    sud50n025

    Abstract: AN609 SUD50N025-05P
    Text: SUD50N025-05P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD50N025-05P AN609 12-Oct-07 sud50n025

    application notes 74121

    Abstract: 74121 spice model 74121 sud*50n025 09bp 74121 ON SUD50N025-09BP sud*50n025
    Text: SPICE Device Model SUD50N025-09BP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N025-09BP 18-Jul-08 application notes 74121 74121 spice model 74121 sud*50n025 09bp 74121 ON SUD50N025-09BP sud*50n025

    SD 338

    Abstract: 73-393 SUD50N025-05P
    Text: SPICE Device Model SUD50N025-05P Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N025-05P S-50907Rev. 16-May-05 SD 338 73-393 SUD50N025-05P

    SUD50N025-09BP

    Abstract: sud*50n025-09bp sud*50n025 09bp sud50n025 sud*50n025
    Text: SUD50N025-09BP New Product Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0086 @ VGS = 10 V 62 0.012 @ VGS = 4.5 V 52 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 18 5 nC 18.5


    Original     		PDF SUD50N025-09BP O-252 SUD50N025-09BP--E3 08-Apr-05 SUD50N025-09BP sud*50n025-09bp sud*50n025 09bp sud50n025 sud*50n025

    5102 mosfet

    Abstract: No abstract text available
    Text: SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC COMPLIANT


    Original     		PDF SUD50N025-4m5P O-252 SUD50N025-4m5P-E3 11-Mar-11 5102 mosfet

    sud*50n025-06p

    Abstract: SUD50N025-06P sud50n025 sud*50n025
    Text: SPICE Device Model SUD50N025-06P Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N025-06P S-61151Rev. 26-Jun-06 sud*50n025-06p SUD50N025-06P sud50n025 sud*50n025

    sud*50n025-06p

    Abstract: SUD50N025-06P SUD50N025-06P-E3
    Text: SUD50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5


    Original     		PDF SUD50N025-06P O-252 SUD50N025-06P--E3 08-Apr-05 sud*50n025-06p SUD50N025-06P SUD50N025-06P-E3

    sud*50n025

    Abstract: SUD50N025-05P 73362 TB-17
    Text: SUD50N025-05P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS


    Original     		PDF SUD50N025-05P O-252 SUD50N025-05P--E3 08-Apr-05 sud*50n025 SUD50N025-05P 73362 TB-17

    Untitled

    Abstract: No abstract text available
    Text: SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC COMPLIANT


    Original     		PDF SUD50N025-4m5P O-252 SUD50N025-4m5P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    74857

    Abstract: 18A60
    Text: SPICE Device Model SUD50N025-4m5P Vishay Siliconix N-Channel 25V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N025-4m5P 18-Jul-08 74857 18A60

    sud*50n025

    Abstract: sud50n025 AN609 68850
    Text: SUD50N025-4m5P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SUD50N025-4m5P AN609, C50N025-4m5P 16-Jul-08 sud*50n025 sud50n025 AN609 68850

    SUD50N025-05P

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50N025-05P Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N025-05P S-61151Rev. 26-Jun-06 SUD50N025-05P