SUBSTRATE TEFLON-GLASS ER 2.55 Search Results

SUBSTRATE TEFLON-GLASS ER 2.55 Result Highlights (5)

Part	Manufacturer	Description	Download
CO-316SMAX200-004	Amphenol Cables on Demand	Amphenol CO-316SMAX200-004 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 4ft	Datasheet
CO-316SMAX200-001	Amphenol Cables on Demand	Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft	Datasheet
CO-316SMAX200-005	Amphenol Cables on Demand	Amphenol CO-316SMAX200-005 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 5ft	Datasheet
CO-316SMAX200-007.5	Amphenol Cables on Demand	Amphenol CO-316SMAX200-007.5 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 7.5ft	Datasheet
CO-316SMAX200-002	Amphenol Cables on Demand	Amphenol CO-316SMAX200-002 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 2ft	Datasheet

SUBSTRATE TEFLON-GLASS ER 2.55 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DIODE 4005 Abstract: DIODE aay 49 100b choke M175 SD1660 AAY49 GE DIODE Text: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST	Original	SD1660 SD1660 DIODE 4005 DIODE aay 49 100b choke M175 AAY49 GE DIODE	PDF
DIODE aay 49 Abstract: 100MF 63V GE DIODE diode l19 AAY49 M175 SD1660 si diode Text: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST	Original	SD1660 SD1660 DIODE aay 49 100MF 63V GE DIODE diode l19 AAY49 M175 si diode	PDF
push pull class AB RF linear Abstract: R767 SD1492 BOX63B 400S M175 GE DIODE Text: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING POUT = 150 W MIN. WITH 6.5 dB GAIN	Original	SD1492 SD1492 push pull class AB RF linear R767 BOX63B 400S M175 GE DIODE	PDF
SD1732 Abstract: TDS595 s3 vision LCC capacitor S2 Text: SD1732 TDS595 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION	Original	SD1732 TDS595) TDS595 SD1732 TDS595 s3 vision LCC capacitor S2	PDF
SD1680 Abstract: M175 push pull class AB RF linear DIODE aay 49 j 4005 Text: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST	Original	SD1680 SD1680 M175 push pull class AB RF linear DIODE aay 49 j 4005	PDF
SD1492 Abstract: R767 16 AWG 400S M175 GE DIODE push pull class AB RF linear l21 diode Text: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING P OUT = 150 W MIN. WITH 6.5 dB GAIN	Original	SD1492 SD1492 R767 16 AWG 400S M175 GE DIODE push pull class AB RF linear l21 diode	PDF
30mils Abstract: SD1732 TDS595 transistor cross ref RF UHF modulat applications of Transistor BDX 54 Text: SD1732 TDS595 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION	Original	SD1732 TDS595) TDS595 SD1732 30mils TDS595 transistor cross ref RF UHF modulat applications of Transistor BDX 54	PDF
SD1680 Abstract: DIODE aay 49 Electronic ballast 100W push pull class AB RF linear SD168 M175 GE DIODE Text: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST	Original	SD1680 SD1680 DIODE aay 49 Electronic ballast 100W push pull class AB RF linear SD168 M175 GE DIODE	PDF
applications of Transistor BDX 54 Abstract: s3 vision Text: SD1732 TDS595 RF POWER BIPOLAR TRANSISTORS TV LINEAR APPLICATIONS FEATURES SUMMARY • 470 - 860 MHz Figure 1. Package ■ 25 VOLTS ■ CLASS A PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION	Original	SD1732 TDS595) SD1732 applications of Transistor BDX 54 s3 vision	PDF
on 5295 transistor Abstract: J374 on 5295 mosfet transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier	Original	MRF18085B MRF18085BR3 MRF18085BLSR3 on 5295 transistor J374 on 5295 mosfet transistor	PDF
MF 198 ferrite Abstract: capacitor j476 capacitor Marking J336 Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier	Original	RF18085BR3 MRF18085BLSR3 MRF18085BR3 MF 198 ferrite capacitor j476 capacitor Marking J336	PDF
TDS595 Abstract: SD1732 s3 vision Text: SD1732 TDS595 RF POWER BIPOLAR TRANSISTORS TV LINEAR APPLICATIONS FEATURES SUMMARY • 470 - 860 MHz Figure 1. Package ■ 25 VOLTS ■ CLASS A PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION	Original	SD1732 TDS595) SD1732 TDS595 s3 vision	PDF
copper permittivity Abstract: MLC092 Text: Philips Semiconductors Product specification PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN 1 • Interdigitated structure provides high emitter efficiency	OCR Scan	OT440A PTB23001X; PTB23003X; PTB23005Xps K10kl PTB23005X PTB23001X. copper permittivity MLC092	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification Microwave power transistor PLB16004U FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common base class C	OCR Scan	PLB16004U	PDF

NF4-5V Abstract: capacitor feed-through ERIE ceramic capacitor Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCEDATA . input matching cell allows an easier design of circuits Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.	OCR Scan	OT437A AT-3-7-271SL PLB16012U NF4-5V capacitor feed-through ERIE ceramic capacitor	PDF
erie feedthrough capacitors Abstract: PLB16012U SC15 Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCE DATA • Input matching cell allows an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors	OCR Scan	PLB16012U OT437A OT437A. erie feedthrough capacitors PLB16012U SC15	PDF
K 4005 transistor Abstract: No abstract text available Text: f Z 7 ^ 7 # . S G M S - 1 H 0 M » Ê t H ê r a M S 0 N SD1660 O g ! RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . . . . > 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY	OCR Scan	SD1660 SD1660 K 4005 transistor	PDF
Untitled Abstract: No abstract text available Text: S G S - IH O M S O N SD1732 TDS595 5 7 . RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS	OCR Scan	SD1732 TDS595) SD1732 0G7D723	PDF
5q 1265 rf Abstract: DIODE aay 49 Text: SGS-THOMSON 5 7 . SD1492 m RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS • ■ i ■ ■ . ■ . ■ 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION	OCR Scan	SD1492 SD1492 5q 1265 rf DIODE aay 49	PDF
Untitled Abstract: No abstract text available Text: S G S - T H Ç O M S O N IlO T M D Ê i ï. SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS > . . . . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY	OCR Scan	SD1680 SD1680 1994SGS-THOMSON 0D70b77	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	OCR Scan	MRF9822T1/D MRF9822T1 MRF9822/D	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE APX bb53T31 0Q3055b bSS BGY96A/B b'lE D UHF AMPLIFIER MODULE The BGY96 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 9.6 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,	OCR Scan	bb53T31 0Q3055b BGY96A/B BGY96 BGY96A BGY96A BGY96B	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E I> • APX bbS3T31 QD3D247 bl2 BGY95A/B UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 7.5 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,	OCR Scan	bbS3T31 QD3D247 BGY95A/B BGY95 BGY95A BGY95B bb53R31 D03D255 BGY95A	PDF
BGY95B Abstract: IG17 BGY95A Text: BGY95A/B J V UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF am plifier module designed prim arily fo r mobile transm itting equipment operating from a nominal 7.5 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,	OCR Scan	BGY95A/B BGY95 BGY95A BGY95B BGY95A BGY95B IG17	PDF

SUBSTRATE TEFLON-GLASS ER 2.55 Search Results

SUBSTRATE TEFLON-GLASS ER 2.55 Result Highlights (5)

SUBSTRATE TEFLON-GLASS ER 2.55 Datasheets Context Search

DIODE 4005

DIODE aay 49

push pull class AB RF linear

SD1732

SD1680

SD1492

30mils

SD1680

applications of Transistor BDX 54

on 5295 transistor

MF 198 ferrite

TDS595

copper permittivity

Untitled

NF4-5V

erie feedthrough capacitors

K 4005 transistor

Untitled

5q 1265 rf

Untitled

Untitled

Untitled

Untitled

BGY95B