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    STH55N10 Search Results

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    STH55N10 Price and Stock

    SGS Thomson STH55N10

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components STH55N10 18
    • 1 $6.768
    • 10 $4.9632
    • 100 $4.512
    • 1000 $4.512
    • 10000 $4.512
    Buy Now

    STH55N10 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STH55N10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STH55N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STH55N10F1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STH55N10FI Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STH55N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON STH55N10 STH55N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 55N 10 STH55N1 OFI Vdss R D S on Id 100 V 100 V 0.030 U 0.030 S2 55 A 33 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


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    PDF STH55N10 STH55N10FI STH55N1 175cC O-218 ISOWATT218 STH55N10/FI

    TSD45N50V

    Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
    Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00


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    PDF O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V

    STH55N10

    Abstract: STW55N10 STH55N10FI gc352 n55a
    Text: 7^5^237 0 04S cî5ti TTfl • S 6 T H _ *57 SGS-THOMSON STH55N1 o/Fl STW55N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 55N 10 STH55N1OFI STW 55N10 ■ . . . . . ■ . V dss RoS on Id 100 V 100 V 100 V < 0.030 n < 0.030 Q


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    PDF STH55N10/FI STW55N10 STH55N10 STH55N10FI STW55N10 7R21237 004S1b2 STH55N10/FI-STW55N10 gc352 n55a

    TSD45N50V

    Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
    Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000


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    PDF STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V