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    STESB01 Search Results

    STESB01 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STESB01 STMicroelectronics ESBT Base Driver Original PDF
    STESB01DR STMicroelectronics ESBT Base Driver Original PDF
    STESB01STR STMicroelectronics ESBT Base Driver Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: STESB01 ESBT Base Driver Features • Controls ESBT Base Current in Every Line/ Load Condition ■ Supply Voltage Range: 8V to 20 V ■ Storage Time Controlled by Closed Loop Architecture from 150ns to 1.5µs ■ SOT23-6L Under Voltage Lockout With Hysteresis


    Original     		PDF STESB01 150ns OT23-6L STESB01

    ESBT

    Abstract: JESD97 STESB01 STESB01DR STESB01STR
    Text: STESB01 ESBT Base Driver Feature summary • Controls ESBT base current in every line/load condition ■ Supply voltage range: 8V to 20 V ■ Storage time controlled by closed loop architecture from 150ns to 1.5µs ■ Under voltage lockout with hysteresis


    Original     		PDF STESB01 150ns OT23-6L STESB01 ESBT JESD97 STESB01DR STESB01STR

    ESBT

    Abstract: JESD97 STESB01 STESB01DR STESB01STR
    Text: STESB01 ESBT Base Driver Feature summary • Controls ESBT base current in every line/load condition ■ Supply voltage range: 8V to 20 V ■ Storage time controlled by closed loop architecture from 150ns to 1.5µs ■ Under voltage lockout with hysteresis


    Original     		PDF STESB01 150ns OT23-6L STESB01 ESBT JESD97 STESB01DR STESB01STR

    Untitled

    Abstract: No abstract text available
    Text: STESB01 ESBT Base Driver Feature summary • Controls ESBT base current in every line/load condition ■ Supply voltage range: 8V to 20 V ■ Storage time controlled by closed loop architecture from 150ns to 1.5µs ■ Under voltage lockout with hysteresis


    Original     		PDF STESB01 150ns OT23-6L STESB01

    ESBT

    Abstract: No abstract text available
    Text: STESB01 ESBT Base Driver Feature summary • Controls ESBT base current in every line/load condition ■ Supply voltage range: 8V to 20 V ■ Storage time controlled by closed loop architecture from 150ns to 1.5µs ■ Under voltage lockout with hysteresis


    Original     		PDF STESB01 150ns OT23-6L STESB01 ESBT