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    ST93C57 Search Results

    ST93C57 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ST93C57B1 Microchip Technology 2K (128 x 16 or 256 x 8) microwire serial EEPROM, 3 to 5.5V Original PDF
    ST93C57B1 SGS-Thomson EEPROM Serial Original PDF
    ST93C57B1013TR Microchip Technology 2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C57B1TR Microchip Technology 2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C57B3 Microchip Technology 2K (128 x 16 or 256 x 8) microwire serial EEPROM, 3 to 5.5V Original PDF
    ST93C57B3 SGS-Thomson EEPROM Serial Original PDF
    ST93C57B3013TR Microchip Technology 2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C57B3TR Microchip Technology 2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C57B6 Microchip Technology 2K (128 x 16 or 256 x 8) microwire serial EEPROM, 3 to 5.5V Original PDF
    ST93C57B6 SGS-Thomson EEPROM Serial Original PDF
    ST93C57B6013TR STMicroelectronics 2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C57B6TR Microchip Technology 2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C57C STMicroelectronics 2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C57CB1 Microchip Technology 2K (128 x 16 or 256 x 8) microwire serial EEPROM, 3 to 5.5V Original PDF
    ST93C57CB1 SGS-Thomson EEPROM Serial Original PDF
    ST93C57CB1013TR Microchip Technology 2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C57CB1TR Microchip Technology 2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C57CB3 Microchip Technology 2K (128 x 16 or 256 x 8) microwire serial EEPROM, 3 to 5.5V Original PDF
    ST93C57CB3 SGS-Thomson EEPROM Serial Original PDF
    ST93C57CB3013TR Microchip Technology 2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM Original PDF

    ST93C57 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 56c

    Abstract: ST93C56 ST93C57C
    Text: ST93C56, 56C ST93C57C SERIAL MICROWIRE BUS 2K 128 x 16 or 256 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


    Original     		PDF ST93C56, ST93C57C ST93C56 ST93C57 ST93C57C ST93C56. diode 56c

    M93C56

    Abstract: ST93C56 ST93C56C ST93C57C
    Text: ST93C56, 56C ST93C57C 2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


    Original     		PDF ST93C56, ST93C57C ST93C56 ST93C57 ST93C56C, ST93C57C M93C56 ST93C56 ST93C57 M93C56 ST93C56C

    ST93C56

    Abstract: No abstract text available
    Text: ST93C56, 56C ST93C57C 2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


    Original     		PDF ST93C56, ST93C57C ST93C56 ST93C57 ST93C56C, ST93C57C M93C56

    Untitled

    Abstract: No abstract text available
    Text: ST93C56, 56C ST93C57C SERIAL MICROWIRE BUS 2K 128 x 16 or 256 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


    Original     		PDF ST93C56, ST93C57C ST93C56 ST93C57 ST93C57C ST93C56.

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    asm eagle

    Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
    Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:


    Original     		PDF BRMEMSEL/0997 asm eagle M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    s2914a

    Abstract: ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45
    Text: データシート マイクロワイヤー TMタイプ . SCIタイプ（Serial Communication Interface） . I2CTMタイプ .


    Original     		PDF AK93CXX SCIAK64XX DACEEPROMAK98XX ST25C16 ST25W16 NM24C17LZ AK6010A AT24C32 CAT24C32 CAT24WC32 s2914a ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45

    PJ 1179

    Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
    Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a


    Original     		PDF

    256k x8 SRAM 5V

    Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
    Text: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)


    Original     		PDF M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 256k x8 SRAM 5V ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09

    M93C46BN1

    Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA


    Original     		PDF M2716-1F1 M2716-1F6 M2716F1 M2716F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-3F1 M2764A-1F1 M2764A-20F1 M93C46BN1 PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7

    am29ma16

    Abstract: AM29M16 AM29M16 PLD atmel 404 93c46 29f512 gal18v8 ATMEL 24C32A COP8622C atmel 93C46 AT27040
    Text: Ironwood Electronics Programming Adapters PR.1 Programming Adapters allow the programming of PROM, PLD, EPROM, EEPROM or PAL devices on programmers or ATE equipment with DIP sockets. We support PLCC, LCC, PGA, SOIC including TSOP , FP, BGA and QFP packages.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: / Z T SGS-THOMSON *7#» »»IUI !! «©® ST93C56, 56C ST93C57C SERIAL MICROWIRE BUS 2K 128 x 16 or 256 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 128 x 16 or 256 x 8 ■ BYTE/WORD and ENTIRE MEMORY


    OCR Scan     		PDF ST93C56, ST93C57C ST93C56 ST93C57 ST93C57C ST93C56/56C,

    Untitled

    Abstract: No abstract text available
    Text: /T T SGS-THOMSON ^ 7 # . HDlg^OllLIgTOOIfSlDgi ST93C56, 56C ST93C57C SERIAL M ICR O W IR E BUS 2K 128 x 16 or 256 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 1 2 8 x1 6 or 2 5 6 x 8 ■ BYTE/WORD and ENTIRE MEMORY


    OCR Scan     		PDF ST93C56, ST93C57C ST93C56 ST93C57 ST93C57C ST93C56. ST93thout

    Untitled

    Abstract: No abstract text available
    Text: / Z T SGS-IHOMSON ST93C56, 56C * 71 , ST93C57C 2K 128 X 16 or 256 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION > DUAL ORGANIZATION: 1 2 8 x1 6 or 2 5 6 x 8 ■ BYTE/WORD and ENTIRE MEMORY


    OCR Scan     		PDF ST93C56, ST93C57C ST93C56 ST93C57 ST93C56C, ST93C57Care M93C56 SC57C

    Untitled

    Abstract: No abstract text available
    Text: r Z Z SGS-THOMSON ST93CS57 s 2 K BITS 128 x 16 SERIAL ACCESS CMOS EEPROM MEMORY • 2.5V - 5.5V SINGLE POWER SUPPLY IN ALL MODES ■ USER DEFINED SIZE OF A MEMORY SEC­ TION PROTECTED AGAINST WRITE. ■ WORD AND PAGE WRITE MODES. ■ HIGHLY INCREASED RELIABILITY OF CMOS


    OCR Scan     		PDF ST93CS57 ST93CS57B1 ST93CS57M1 ST93CS57ML1 ST93CS57M6 ST93CS57B6 ST93CS57ML6 ST93CS57M3