Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SSSMINI3-F1 TRANSISTOR Search Results

    SSSMINI3-F1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SSSMINI3-F1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40)


    Original     		PDF 2002/95/EC) 2SC5846

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40)


    Original     		PDF 2002/95/EC) 2SC5846

    2SC5846

    Abstract: No abstract text available
    Text: Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 2 0.15 min. 1 0.23+0.05 –0.02 0.40 (0.40) 0.80±0.05 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC5846 2SC5846

    2SC5846G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type For general amplification • Package • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the


    Original     		PDF 2002/95/EC) 2SC5846G 2SC5846G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package ■ Features • Code SSSMini3-F1


    Original     		PDF 2002/95/EC) 2SK3372

    2SC5846

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02


    Original     		PDF 2002/95/EC) 2SC5846 2SC5846

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type For general amplification • Package • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the


    Original     		PDF 2002/95/EC) 2SC5846G

    2SC5846G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SC5846G 2SC5846G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3426 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package ■ Features • Code SSSMini3-F1


    Original     		PDF 2002/95/EC) 2SK3426

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 di p Pl lan nclu ea e se pla m d m des


    Original     		PDF 2002/95/EC) 2SC5846

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type For general amplification • Features ■ Package • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the


    Original     		PDF 2002/95/EC) 2SC5846G

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062