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    tic 2250

    Abstract: No abstract text available
    Text: SSS2316 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (mΩ) Max D 20 @VGS = 4.5V G 30 @VGS = 2.5V 5A 20V S 45 @VGS = 1.8V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S


    Original     		PDF SSS2316 OT-23 OT-23 Operati50% tic 2250