Untitled
Abstract: No abstract text available
Text: SSR/U3055A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS on = 0.15 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
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SSR/U3055A
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SSR -25 DD
Abstract: No abstract text available
Text: SSR/U3055A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS on = 0.15 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
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SSR/U3055A
32oduct
SSR -25 DD
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Untitled
Abstract: No abstract text available
Text: SSR/U1N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS on = 5.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.3 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = 500V
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SSR/U1N50A
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MOSFET SSR
Abstract: No abstract text available
Text: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
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SSR/U3055LA
MOSFET SSR
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Untitled
Abstract: No abstract text available
Text: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
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SSR/U3055LA
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PDF
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Untitled
Abstract: No abstract text available
Text: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
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SSR/U3055LA
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA-SI 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)
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EDD2516KCTA-SI
66-pin
333Mbps/266Mbps
cycles/64d
M01E0107
E0555E40
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PDF
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7A SF
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA-SI 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)
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EDD2516KCTA-SI
66-pin
333Mbps/266Mbps
M01E0107
E0555E40
7A SF
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)
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EDD2516KCTA
66-pin
333Mbps/266Mbps
cycles/64ms
M01E0107
E0641E20
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PDF
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7A SF
Abstract: EDD2516KCTA
Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)
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EDD2516KCTA
66-pin
333Mbps/266Mbps
M01E0107
E0641E20
7A SF
EDD2516KCTA
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SSR -40 DD
Abstract: SSR -25 DD SSR -100 DD 861HSSR led 1 w 48 VDC voltage regulator SSR -60 DD
Text: R e l a y s S t a t e 861H Class 1, Division 2 Certified Solid State Relay GENERAL SPECIFICATIONS File No. E317746 www.magnecraft.com Class 1, Division 2 certification for use in hazardous locations IEC 60947-1 OUTPUT CHARACTERISTICS 861HSSR*-DD 861HSSR*-AC-1
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E317746
861HSSR*
400SP02-0709
SSR -40 DD
SSR -25 DD
SSR -100 DD
861HSSR
led 1 w
48 VDC voltage regulator
SSR -60 DD
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PDF
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SSR -25 DD
Abstract: SSR -100 DD 48 VDC voltage regulator 861HSSR SSR -40 DD mosfet current limiter E317746
Text: R e l a y s S t a t e 861H Class 1, Division 2 Certified Solid State Relay GENERAL SPECIFICATIONS File No. E317746 www.magnecraft.com Class 1, Division 2 certification for use in hazardous locations IEC 60947-1 Output Characteristics 861HSSR*-DD 861HSSR*-AC-1
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Original
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E317746
861HSSR*
400SP02-0709
SSR -25 DD
SSR -100 DD
48 VDC voltage regulator
861HSSR
SSR -40 DD
mosfet current limiter
E317746
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PDF
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ac to dc to ac voltage regulator
Abstract: schneider overload relay WIRING DIAGRAM ac to ac regulator ul 924 relay ac current regulator AC 2500 ac to dc regulator
Text: S t a t e R e la y 861 Solid State Relay GENERAL SPECIFICATIONS OUTPUT CHARACTERISTICS UNIT 861SSR210-DC-1 861SSR210-AC-1 861SSRA208-DC-1 861SSRA208-AC-1 861SSR115-DD 861SSR208-DD SPST-NO SCR 2 10 24….280 AC Zero Cross SPST-NO SCR (2) 10 24….280 AC Zero Cross
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861SSR210-DC-1
861SSR210-AC-1
861SSRA208-DC-1
861SSRA208-AC-1
861SSR115-DD
861SSR208-DD
16-788C1)
ac to dc to ac voltage regulator
schneider overload relay WIRING DIAGRAM
ac to ac regulator
ul 924 relay
ac current regulator
AC 2500
ac to dc regulator
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SSR -40 DD
Abstract: power mosfet j 162 MOSFET SSR
Text: SSR/U1N50A Advanced Power MOSFET FEATURES BVDss - 500 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance ■ Improved Gate Charge _P ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 ■ Lower RDS{oN) : 4.046 £2 (Typ.)
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OCR Scan
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SSR/U1N50A
SSR -40 DD
power mosfet j 162
MOSFET SSR
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SSR -40 DD
Abstract: No abstract text available
Text: SSR/U1N50A A d va n ce d Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ VDS= 500V
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OCR Scan
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SSR/U1N50A
1N50A
SSR -40 DD
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PDF
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Untitled
Abstract: No abstract text available
Text: SSR/Ü3055A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 6 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ Lower RDS{0N) : 0.097 £2 (Typ.)
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OCR Scan
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SSR/U3055A
300nF
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PDF
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SSR -100 DD
Abstract: No abstract text available
Text: SSR/U3055LA 60 V ^ D S o n = 0 .1 • Logic-Level Gate Drive ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10|iA (M ax.) @ VDS = 60V
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OCR Scan
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SSR/U3055LA
SSR -100 DD
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PDF
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SSR -100 DD
Abstract: SSR -25 DD
Text: Advanced SSR/U1N50A Power MOSFET FEATURES BVDSS - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-3 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ V DS = 500V
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OCR Scan
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SSR/U1N50A
SSR -100 DD
SSR -25 DD
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PDF
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Untitled
Abstract: No abstract text available
Text: SSR/U3055A FEATURES Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 60 V ^ D S o n = 0 .1 5 ft o II ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (M ax.) @ V DS = 60V
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SSR/U3055A
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PDF
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Untitled
Abstract: No abstract text available
Text: SSR/U1N50A Advanced Power MOSFET FEATURES B V DSs = 500 V • Avalanche Rugged Technology II O ■ Lower Input Capacitance CO ^DS on = ■ Rugged Gate Oxide Technology 5 .5 Î 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area D-PAK ■ Lower Leakage Current : 10 uA (Max.) @ V DS = 500V
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SSR/U1N50A
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PDF
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vde 0110
Abstract: No abstract text available
Text: M&CNECRAFT ELECTRIC CO SflE D S7D71G1 0DG3bS7 210 WM HGF SSR CLASS 6 D C IN P U T DC O UTPUT H IG H R E L IA B IL IT Y T Y P E 3 .5 -3 2 V D C IN P U T Transformer-Isolated. ,170 Dia. 4.4 2 Pis 10-32 Thd. 2 Pis. 1.70 (43.2) 2.25 (57.2) t - T 0.78 0.87 (1 9 8 ) ( 2 2 . 2 )
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00G3b57
W6212
vde 0110
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PDF
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on 4046
Abstract: No abstract text available
Text: Advanced SSR/U1N50A P o w e r MOSFET FEATURES BV DSS = 5 0 0 V • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n lD ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 nA (M ax.) @ V DS = 500V
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OCR Scan
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SSR/U1N50A
on 4046
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PDF
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Untitled
Abstract: No abstract text available
Text: IL329 SIEMENS Optically Coupled Telecom Switch Preliminary Data Sheet FEATURES • Solid state relay and AC input • Optocoupler Package— Single 18 Pin • I/O Isolation, 2500 VRMS • Surface Mountable • Optocoupler - Bidirectional C urrent Detection
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IL329
IL329
18-pln
fl535t
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PDF
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ECC89
Abstract: STR 6267 str g 5551 6C51H-B 6N3C ecc189 6H13C 6l6gt str f 6267 6CM5
Text: 6 Z a 121200 MOSKVA G 200 ELECTRONQRGTECHNICA 5 2 ELORG MOSKVA 200 0 240-96-07 5 3 411.386 REPLACEMENT GUIDE for USSR and FOREIGN ELECTRONIC TUBES U SSR - M O SC O W Type of U SSR Foreign eq u ivalen ts iA in 1147c 1142111 31422c 5J1038M 5I43C 5I44M K 5I44C
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1147c
31422c
5J1038M
5I43C
5I44M
5I44C
6/H22C
WT171
DY802
GY501
ECC89
STR 6267
str g 5551
6C51H-B
6N3C
ecc189
6H13C
6l6gt
str f 6267
6CM5
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