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    MOSFET TSSOP-8 dual n-channel

    Abstract: No abstract text available
    Text: SSG8810A Common Drain Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V TSSOP-8 8 RDS(ON) (mΩ) Max ID (A) 7 6 5 20 @VGS = 4.5V 7A 20V 1 24 @VGS = 2.5V 2 3 4 D1 (1) D2 (8) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.


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