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    Text: SSG8205N Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 20V 6A TSSOP-8 8 RDS(ON) (m ) Max 7 6 5 25 @VGS = 4.5V 1 37 @VGS = 2.5V 2 3 4 D1 (1) D2 (8) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G2(5) G1(4)


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