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    Mosfet

    Abstract: SSF2816EB
    Text: SSF2816EB 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V


    Original     		PDF SSF2816EB SSF2816EB Mosfet

    Untitled

    Abstract: No abstract text available
    Text: SSF2816EB DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		PDF GDSSF2816EB SSF2816EB SSF2816EB

    SSF2816E

    Abstract: SSF2816 S-SF2816 2816E
    Text: SSF2816E DESCRIPTION The SSF2816E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		PDF SSF2816E SSF2816E Rating2500V 2816E 330mm SSF2816 S-SF2816 2816E

    Mosfet

    Abstract: SSF2816EBK
    Text: SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V


    Original     		PDF SSF2816EBK SSF2816EBK Mosfet

    Mosfet

    Abstract: SSF2816E SSF2816
    Text: SSF2816E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 16.5mohm(typ.) ID 7A TSSOP-8 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2816E Mosfet SSF2816E SSF2816

    Untitled

    Abstract: No abstract text available
    Text: SSF2816EBK DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		PDF GDSSF2816EBK SSF2816EBK SSF2816E