SS 297 TRANSISTOR Search Results

SS 297 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SS 297 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ss 297 transistor Abstract: Q67000-S118 Q67000-S292 Text: BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2Ω TO-92 SS 297 Type BSS 297 BSS 297 Ordering Code Q67000-S118	Original	PDF	Q67000-S118 Q67000-S292 E6288 E6325 ss 297 transistor Q67000-S118 Q67000-S292
ss 297 transistor Abstract: Q67000-S118 Q67000-S292 Text: BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2Ω TO-92 SS 297 Type BSS 297 BSS 297 Ordering Code Q67000-S118	Original	PDF	Q67000-S118 Q67000-S292 E6288 E6325 ss 297 transistor Q67000-S118 Q67000-S292
HT121WX2-210 Abstract: tablet display 10.1 WXGA FI-JT40S-HF10 THC63LVDM83A LCD 4 X 20 FI-JH40S-HF10 lcd monitor led stripe 40 pin led screen LVDS SMD Code WY Text: PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF HYDIS AND MUST BE RETURNED TO HYDIS UPON ITS REQUEST TITLE : HT121WX2-210 y Product Specification p Preliminary for Customer	Original	PDF	HT121WX2-210 B2005-C001-C HT121WX2-210 tablet display 10.1 WXGA FI-JT40S-HF10 THC63LVDM83A LCD 4 X 20 FI-JH40S-HF10 lcd monitor led stripe 40 pin led screen LVDS SMD Code WY
ss 297 transistor Abstract: Q62702-S616 sm 559 b* siemens bss 297 transistor transistor bss transistor Siemens sS 92 Text: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type ¡D 0.48 A BSS 297 VDS 200 V Type BSS 297 BSS 297 BSS 297 Ordering Code Q62702-S616 Q67000-S118 Q67000-S292 ^DS(on)	OCR Scan	PDF	Q62702-S616 Q67000-S118 Q67000-S292 E6288 E6325 ss 297 transistor sm 559 b* siemens bss 297 transistor transistor bss transistor Siemens sS 92
bss 97 transistor Abstract: ss 297 transistor Text: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • '/GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 297 ^DS 200 V Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 b 0.48 A ffDS<on) 2Q Pin 3 D Package	OCR Scan	PDF	Q67000-S118 Q67000-S292 E6288 E6325 bss 97 transistor ss 297 transistor
Untitled Abstract: No abstract text available Text: SIEMENS BSP 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type Vqs h BSP 297 200 V 0.65 A Type BSP 297 Ordering Code Q67000-S068 ^DS(on) Package Marking 2Q SOT-223 BSP 297 Tape and Reel Information	OCR Scan	PDF	OT-223 Q67000-S068 E6327
Untitled Abstract: No abstract text available Text: BSS 297 In fin e o n technologie* SIPMOS • Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 * ^ G S th VPT05548 = 0.8.2.0V Pin 1 Pin 2 G Type Vbs BSS 297 200 V Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 0.48 A	OCR Scan	PDF	VPT05548 Q67000-S118 Q67000-S292 E6288 E6325 S35bQ5 Q133777 SQT-89
buz25 Abstract: No abstract text available Text: PowerMOS transistor BUZ25 QbE D N AMER PHILIPS / D I S CR E T E bbS3T31 0014bDS S July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	BUZ25 bbS3T31 0014bDS T-39-11 BUZ25_ bb53131 0014blQ buz25
Untitled Abstract: No abstract text available Text: 32E D • 053b32G 001b720 2 « S IP PNP Silicon AF Transistors _ S I E M E N S / • • • • • SPCL-, BCX 69 T ' 2 1 - 2 3 _ SEMICONDS For general AF applications High collector current High current gain Low collector-em ltter saturation voltage	OCR Scan	PDF	053b32G 001b720 Q62702-C1080 Q62702-C1081 Q62702-C1082 Q62702-C1867 Q62702-C1868 Q62702-C1869 BCX69
Untitled Abstract: No abstract text available Text: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6	OCR Scan	PDF	BSP318S OT-223 Q67000-S127 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T
2SC373 Abstract: transistor 2sc373 2sc372 transistor 2SC372 2SC372 2SC373 2SC372 transistor 2sc373 toshiba 2SA495 2SC37 NPN 2sc372 Text: 2SC3 2 G 2 / U D > N P N Z t i ^ 5 / ? ;W B h 5 > 5 ;^ P C T S S C SILICON NPN EPITAXIAL TRANSISTOR ( PCT PROCES^^ 2S c 3 3 G O O a f t ! # « yf- INDUSTRIAL APPLICATIONS o H ig h Frequency A m p li fie r A p p lic a t io n s o H igh Speed S w itc h in g A p p lic a t io n s	OCR Scan	PDF	2SA495Â 2sc372Â 2sc373Â 2SC373 transistor 2sc373 2sc372 transistor 2SC372 2SC372 2SC373 2SC372 transistor 2sc373 toshiba 2SA495 2SC37 NPN 2sc372
MICROWAVE ASSOCIATES Abstract: pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298 Text: M/A-C'OM' SEMICONDUCTOR _ci3 DE \|St.45E] M □□00L30 S MA4F001 Series ¡88 Gallium Arsenide Field ^ Effect Transistors % S t su* mi IP I i Description a The MA4F001 series of gallium arsenide fieldeffect transistors (GaAs FETs) is a series of low power Schottky barrier gate devices with a 1	OCR Scan	PDF	00L30 MA4F001 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 MICROWAVE ASSOCIATES pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b^E D bbS3R31 ODBDhOO EOS H A P X Product Specification Philips Semiconductors BUK453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in	OCR Scan	PDF	bbS3R31 BUK453-60A/B O220AB BUK453 0030b04
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to	OCR Scan	PDF	BU2525DX /PD25

MA4F004 Abstract: No abstract text available Text: Vv M/A-COM ADVANCED DE \|st,4aifl3 ODDDDCH □ \| ' 7 ' 3 / ' ^ 5 A ßm MA4F004 Series Gallium Arsenide Field Effect Transistor Description Features The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X	OCR Scan	PDF	MA4F004 Number4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300
BUK453-60A Abstract: BUK453-60B T0220AB Text: PHILIPS INTERNATIONAL bSE D B 711065b □□bL4D3fc. 033 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	711065b BUK453-60A/B T0220AB BUK453-60A BUK453-60B
GEN 50 Abstract: No abstract text available Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	PDF	BUK453-60A/B BUK453 T0220AB GEN 50
BUZ MOSFET Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8	OCR Scan	PDF	615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
8uk453 Abstract: BUK453-60A BUK453-60B T0220AB Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B
Untitled Abstract: No abstract text available Text: 30E D 57 6 S • T 'i S 'I S a ? G 031115 S C S -T H O M S O N H L U m ! 3 ■ 2 N 2 2 1 8 A -2 N 2 2 1 9 A 2 N 2 2 2 1 A -2 N 2 2 2 2 A S-THOMSON H IG H SP EE D SWITCHES DESC RIPTIO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec	OCR Scan	PDF	2N2218A, 2N2219A, 2N2221A 2N2222A 2N2218A 2N2219A) 2N2222A) 2N2218A/2N2219A 2N2221A/2N2222A
BUK455 Abstract: BUK455-600B BUK455-600A BUK455 600b T0220AB BUK455 600 Text: N AMER P H I L I P S / D I S C R E T E 25E D • ^5 3 = 1 3 1 0 0 2D S1 5 1 ■ PowerMOS transistor BUK455-600A BUK455-600B r ^ 2 i-} 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	bb53T31 BUK455-600A BUK455-600B T-21-i3 BUK455 -600A -600B BUK455 600b T0220AB BUK455 600
Untitled Abstract: No abstract text available Text: CS-298 2A Dual H-Bridge Driver D escription Features The emitters of the lower transistors of each bridge are connected together and the corresponding pins SENSE A/SENSE B can be connected to a sense resistor which, when used with an appropriate external circuit, can detect load faults or	OCR Scan	PDF	CS-298 CS-298 CS-298M15 CS-298MV15
TV RADIO IC siemens Abstract: PSB8593 Text: S IE M E N S Dual-Tone Multi-Frequency Generator DTMF PSB 8593 CMOS 1C Type Ordering Code Package PSB 8593 Q 67100-H 8168 P-DIP-20 The DTMF generator PSB 8593 is specially designed to implement a dual-tone telephone dialing system. The device can be connected directly to a standard pushbutton keyboard	OCR Scan	PDF	67100-H P-DIP-20 TV RADIO IC siemens PSB8593
ir5040 Abstract: 2SC3143 100w amp sanyo pa 2030a A1257 SANYO SS 1001 2SA1257 103 7707 transistor s 2065 af Text: SA NY O S E M I C O N D U C T O R CORP SSE D 7 cic]7D7b 0 D 0 7 Q 4 S T 2SA1257, 2SC3143 T -2 7-09 PN P/N PN Epitaxial Planar Silicon Transistors 2 0 1 8A High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications 1057B F e a tu re s • V ery sm all-sized package p erm ittin g the 2SA1257/2SC3143-applied sets to be m ade sm all and slim	OCR Scan	PDF	7cH707fci 0D07042 2SA1257, 2SC3143 T-27-09 1057B 2SA1257/2SC3143-applied 2SA1257 ir5040 2SC3143 100w amp sanyo pa 2030a A1257 SANYO SS 1001 103 7707 transistor s 2065 af

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SS 297 TRANSISTOR Search Results

SS 297 TRANSISTOR Result Highlights (5)

SS 297 TRANSISTOR Datasheets Context Search

ss 297 transistor

ss 297 transistor

HT121WX2-210

ss 297 transistor

bss 97 transistor

Untitled

Untitled

buz25

Untitled

Untitled

2SC373

MICROWAVE ASSOCIATES

Untitled

Untitled

MA4F004

BUK453-60A

GEN 50

BUZ MOSFET

8uk453

Untitled

BUK455

Untitled

TV RADIO IC siemens

ir5040