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Sirenza Microdevices SPA-1118Z 810 MHz - 960 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SPA-1118Z		2,520			1 $19.2375 10 $19.2375 100 $19.2375 1000 $12.825 10000 $12.825	Buy Now
	SPA-1118Z		1,170			1 $17.1 10 $17.1 100 $17.1 1000 $8.55 10000 $8.55	Buy Now
RF Micro Devices Inc SPA-1118Z 810 MHz - 960 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SPA-1118Z		20			1 $13.1985 10 $11.732 100 $11.732 1000 $11.732 10000 $11.732	Buy Now
Bristol Electronics	SPA-1118Z		25			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SPA1118Z Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SPA-1118Z		RF Micro Devices	RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 850MHZ 8-SOIC		Original	PDF
SPA-1118Z		Sirenza Microdevices	850 MHz 1 Watt Power Amplifier with Active Bias		Original	PDF

SPA1118Z Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic	Original	PDF	SPA1118Z 850MHz 850MHz SPA1118Z MCH18 100nH, 1008HQ
Untitled Abstract: No abstract text available Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic	Original	PDF	SPA1118Z 850MHz 850MHz SPA1118Z MCH18 100nH, 1008HQ
Untitled Abstract: No abstract text available Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT	Original	PDF	SPA1118Z 850MHz SPA1118Z DS111217 ECB-101161
Untitled Abstract: No abstract text available Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VCC InGaP HBT N/C VBIAS SiGe BiCMOS Active Bias	Original	PDF	SPA1118Z 850MHz SPA1118Z 106K020R MCH18
1watt wireless amplifier schematic Abstract: No abstract text available Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic	Original	PDF	SPA1118Z 850MHz SPA1118Z 100nH, MCH18 106K020R 1watt wireless amplifier schematic
MCH18 Abstract: MCR03 SPA-1118 SPA-1118Z TAJB106K020R Text: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial	Original	PDF	SPA-1118 SPA-1118 SPA-1118Z EDS-101427 MCH18 MCR03 SPA-1118Z TAJB106K020R
2005Z Abstract: TRANSISTOR a105 a105 transistor 2005 Z 2005.z SXA3318BZ JESD22-A113C spa2318z JESD22-A-102 JESD22-A104B Text: Reliability Qualification Report SPA-2318 - SnPb Plated SPA-2318Z - Matte Sn, RoHS compliant Products Qualified by Similarity SPA-1118 SPA-1218 SPA-1318 SPA-2118 SXA-3318B SPA-1118Z SPA-1218Z SPA-1318Z SPA-2118Z SXA-3318BZ The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for	Original	PDF	SPA-2318 SPA-2318Z SPA-1118 SPA-1218 SPA-1318 SPA-2118 SXA-3318B SPA-1118Z SPA-1218Z SPA-1318Z 2005Z TRANSISTOR a105 a105 transistor 2005 Z 2005.z SXA3318BZ JESD22-A113C spa2318z JESD22-A-102 JESD22-A104B
200 watt schematics power amp Abstract: MCH18 MCR03 SPA-1118 SPA-1118Z TAJB106K020R Sirenza Microdevices al Text: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial	Original	PDF	SPA-1118 SPA-1118 SPA-1118Z EDS-101427 200 watt schematics power amp MCH18 MCR03 SPA-1118Z TAJB106K020R Sirenza Microdevices al
1watt wireless amplifier schematic Abstract: SPA-1118 SPA-1118Z MCH18 MCR03 SPA11 Text: SPA-1118 Z SPA-1118(Z) 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP 8 Product Description Features RFMD’s SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic	Original	PDF	SPA-1118 850MHz 850MHz MCH18 106K020R 1000pF, 1watt wireless amplifier schematic SPA-1118Z MCR03 SPA11