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    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SOURCE GATE Datasheets (43)

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    SGMB201209C070 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
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    Untitled

    Abstract: No abstract text available
    Text: MMFTN3018W Silicon N-Channel MOSFET Applications • Interfacing, switching 1. Gate 2. Source 3. Drain SOT-323 Plastic Package Drain Gate Source Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Drain Source Voltage VDSS 30 V Gate Source Voltage


    Original     		PDF MMFTN3018W OT-323

    CURRENT SOURCE

    Abstract: ALD1107 Ald1103 ALD1105 ALD1106 Effects ALD1101 ALD1102 ALD1116 ALD1117
    Text: Category: Current Source CIRCUIT IDEAS FOR DESIGNERS Schematic no. cs_11005.0 Current Source with Gate Control Description This current source can be turned on and turned off with a logic control input. The source current is controlled by the ISET, which is in turn set by the RSET resistor.


    Original     		PDF ALD1103 ALD1103, ALD1106 ALD1107, ALD1116 ALD1117 ALD1101 ALD1102, ALD1105 CURRENT SOURCE ALD1107 Ald1103 ALD1105 ALD1106 Effects ALD1101 ALD1102 ALD1116 ALD1117

    4501ss

    Abstract: rd15 WTK4501 RD 15 4501s
    Text: WTK4501 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 30 VOLTAGE DRAIN CURRENT 7 AMPERES 7,8 DRAIN P b Lead Pb -Free 2 GATE 5,6 DRAIN P-CHANNEL DRAIN SOURCE VOLTAGE -30 VOLTAGE DRAIN CURRENT -5.3 AMPERES 3 SOURCE 1 1 SOURCE Features:


    Original     		PDF WTK4501 07-May-07 4501ss rd15 WTK4501 RD 15 4501s

    cs_11005.0

    Abstract: No abstract text available
    Text: Category: Current Source CIRCUIT IDEAS FOR DESIGNERS Schematic no. cs_11005.0 Current Source with Gate Control Description This current source can be turned on and turned off with a logic control input. The source current is controlled by the ISET, which is in turn set by the RSET resistor.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type Dual P-Channel 30-V D-S MOSFET KI4953DY Features 100% Rg Tested 1: Source 1 3: Source 2 2: Gate 1 4: Gate 2 7,8: Drain 1 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage


    Original     		PDF KI4953DY

    Untitled

    Abstract: No abstract text available
    Text: TSM6866D 20V Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 6A =30mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.2A =40mΩ Features Block Diagram


    Original     		PDF TSM6866D TSM6866DCA 300uS,

    MOSFET TSSOP-8 dual n-channel

    Abstract: TSM6968SD TSM6968SDCA
    Text: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected Pin assignment: 1. Drain 1 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain 2 VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 6.5A =25mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =35mΩ Features


    Original     		PDF TSM6968SD TSM6968SDCA 000/per 300uS, MOSFET TSSOP-8 dual n-channel TSM6968SD TSM6968SDCA

    MOSFET TSSOP-8 dual n-channel

    Abstract: TSM6968D TSM6968DCA
    Text: TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 6.5A =22mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =29mΩ Features Block Diagram


    Original     		PDF TSM6968D TSM6968DCA 000/per 300uS, MOSFET TSSOP-8 dual n-channel TSM6968D TSM6968DCA

    TSM902D

    Abstract: DFN PACKAGE thermal resistance Dual N-Channel MOSFET esd protect mosfet
    Text: Preliminary TSM902D 20V Dual N-Channel MOSFET w/ESD Protected DFN 2x5 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 2. Source 1 3. Gate 1 4. Gate 2 5, Source 2 6. Source 2 7. Drain (Exposed Pad) 20 Features ID (A) 22 @ VGS = 4.5V 7 28 @ VGS = 2.5V


    Original     		PDF TSM902D TSM902DCQ TSM902D DFN PACKAGE thermal resistance Dual N-Channel MOSFET esd protect mosfet

    TSM6866D

    Abstract: TSM6968DCA
    Text: TSM6866D 20V Dual N-Channel MOSFET w/ESD Protected Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 6.5A =28mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =40mΩ Features Block Diagram


    Original     		PDF TSM6866D TSM6968DCA 000/per 300uS, TSM6866D TSM6968DCA

    DIODE l02

    Abstract: code l02 2n7002 pinout marking 02J sot transistor pinout marking l02
    Text: CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)


    Original     		PDF CMLDM7002A CMLDM7002AJ* CMLDM7002AJ 2N7002 CMLDM7002A: 200mA, DIODE l02 code l02 2n7002 pinout marking 02J sot transistor pinout marking l02

    E024A

    Abstract: E018A E240D E240B E960B E040A WIRES bonding E025A E1200A
    Text: Excelics Semiconductor, Inc. Recommended Wire Bonding For Excelics FETs E018A E024A Drain Bonding Wire Grounded Source Bonding Wires Gate Bonding Wire E025A E030C Drain Bonding Wire Drain Bonding Wires Grounded Source Grounded Source Bonding Wires Bonding Wires


    Original     		PDF E018A E024A E025A E030C E040A E060A E240D, E480C, E720A, E960B E024A E018A E240D E240B E040A WIRES bonding E025A E1200A

    CMLDM7002AJ

    Abstract: 2N7002 CMLDM7002A marking 02J
    Text: CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)


    Original     		PDF CMLDM7002A CMLDM7002AJ OT-563 CMLDM7002AJ 2N7002 200mA, 400mA CMLDM7002A marking 02J

    p-channel mosfet

    Abstract: MOSFET TSSOP-8 P-Channel 1.8V MOSFET TSM6981D Dual P-Channel MOSFET
    Text: TSM6981D 20V Dual P-Channel MOSFET TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) -20 Features ID (A) 40 @ VGS = -4.5V -5 50 @ VGS = -2.5V -4 60 @ VGS = -1.8V


    Original     		PDF TSM6981D TSM6981DCA p-channel mosfet MOSFET TSSOP-8 P-Channel 1.8V MOSFET TSM6981D Dual P-Channel MOSFET

    P-Channel MOSFET code 1A

    Abstract: TSM6981D
    Text: TSM6981D 20V Dual P-Channel MOSFET TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 -20 Features ID (A) 40 @ VGS = -4.5V -5 50 @ VGS = -2.5V -4 60 @ VGS = -1.8V


    Original     		PDF TSM6981D TSM6981DCA P-Channel MOSFET code 1A TSM6981D

    TSM6963SDCA

    Abstract: No abstract text available
    Text: TSM6963SD 20V Dual P-Channel MOSFET TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) -20 ID (A) 30 @ VGS = -4.5V -4.5 42 @ VGS = -2.5V -3 68 @ VGS = -1.8V


    Original     		PDF TSM6963SD TSM6963SDCA

    Untitled

    Abstract: No abstract text available
    Text: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 22 @ VGS = 4.5V 6.5 29 @ VGS = 2.5V


    Original     		PDF TSM6968SD TSM6968SDCA

    4800 power mosfet

    Abstract: TSM6968D TSM6968DCA 4800 mosfet mosfet 4800
    Text: TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 22 @ VGS = 4.5V 6.5 29 @ VGS = 2.5V


    Original     		PDF TSM6968D TSM6968DCA 4800 power mosfet TSM6968D 4800 mosfet mosfet 4800

    "P-Channel MOSFET"

    Abstract: mosfet p-channel 12v JAN p-channel mosfet transistor low power p-channel mosfet ultra low igss pA TSM6963SD 20V P-Channel Power MOSFET MOSFET TSSOP-8 P-Channel MOSFET code L 1A Dual P-Channel MOSFET
    Text: TSM6963SD 20V Dual P-Channel MOSFET TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 -20 Features ID (A) 30 @ VGS = -4.5V -4.5 42 @ VGS = -2.5V -3 68 @ VGS = -1.8V


    Original     		PDF TSM6963SD TSM6963SDCA "P-Channel MOSFET" mosfet p-channel 12v JAN p-channel mosfet transistor low power p-channel mosfet ultra low igss pA TSM6963SD 20V P-Channel Power MOSFET MOSFET TSSOP-8 P-Channel MOSFET code L 1A Dual P-Channel MOSFET

    MOSFET TSSOP-8 dual n-channel

    Abstract: Dual N-Channel MOSFET MOSFET TSSOP-8 TSM6866D TSM6866DCA "MOSFET TSSOP-8"
    Text: TSM6866D 20V Dual N-Channel MOSFET TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 30 @ VGS = 4.5V 6.0 40 @ VGS = 2.5V 5.2 Block Diagram


    Original     		PDF TSM6866D TSM6866DCA MOSFET TSSOP-8 dual n-channel Dual N-Channel MOSFET MOSFET TSSOP-8 TSM6866D "MOSFET TSSOP-8"

    4800 N-channel mosfet

    Abstract: MOSFET TSSOP-8 dual n-channel esd protect mosfet mosfet 4800 4800 mosfet MOSFET TSSOP-8 TSM6968SD TSM6968SDCA y parameter of mosfet
    Text: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 22 @ VGS = 4.5V 6.5 29 @ VGS = 2.5V


    Original     		PDF TSM6968SD TSM6968SDCA 4800 N-channel mosfet MOSFET TSSOP-8 dual n-channel esd protect mosfet mosfet 4800 4800 mosfet MOSFET TSSOP-8 TSM6968SD y parameter of mosfet

    Untitled

    Abstract: No abstract text available
    Text: TSM6970D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 21 @ VGS = 4.5V 8 25 @ VGS = 2.5V 7


    Original     		PDF TSM6970D TSM6970DCA

    Dual N-Channel MOSFET

    Abstract: mosfet 4800 4800 mosfet MOSFET TSSOP-8 dual n-channel MOSFET TSSOP-8 4800 N-channel mosfet n-channel mosfet transistor FULLY PROTECTED MOSFET
    Text: Preliminary TSM6970D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 21 @ VGS = 4.5V 8 25 @ VGS = 2.5V


    Original     		PDF TSM6970D TSM6970DCA Dual N-Channel MOSFET mosfet 4800 4800 mosfet MOSFET TSSOP-8 dual n-channel MOSFET TSSOP-8 4800 N-channel mosfet n-channel mosfet transistor FULLY PROTECTED MOSFET

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA COMMON SOURCE COMMON SOURCE Tc = 25T; Tc = 2 5 V 3.5 V DRAIN-SOURCE VOLTAOE GATE"SOURCE VOLTAGE VDS V GATE-SOURCE VOLTAGE V Q3 CV) Vqc ; (V) Id (A) FORWARD TRANSFER A DM IT TA N C E DRAIN CURRENT -60 DRAIN CURRENT ID (A) -40


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