SOT89 marking GA
Abstract: BAW78B SOT89 marking GD BAW78C BAW78D Diode Marking C.3 diode 78a BAW78A BAW78 VPS05162
Text: BAW78A.BAW78D Silicon Switching Diodes 1 Switching applications 2 High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW78A GA 1=A 2=C 3 = n.c. SOT89 BAW78B GB 1=A 2=C 3 = n.c. SOT89 BAW78C GC 1=A 2=C 3 = n.c. SOT89
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BAW78A.
BAW78D
VPS05162
EHA07007
BAW78A
BAW78B
BAW78C
EHB00095
EHB00096
SOT89 marking GA
BAW78B
SOT89 marking GD
BAW78C
BAW78D
Diode Marking C.3
diode 78a
BAW78A
BAW78
VPS05162
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Untitled
Abstract: No abstract text available
Text: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW78D BAW79D ! ! Type Package Configuration Marking BAW78D BAW79D SOT89 SOT89 single
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BAW78.
/BAW79.
BAW78D
BAW79D
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Diode markings 79a
Abstract: BAW79D BAW78 BAW78D
Text: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW78D BAW79D ! ! Type Package Configuration Marking BAW78D BAW79D SOT89 SOT89 single
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BAW78.
/BAW79.
BAW78D
BAW79D
Diode markings 79a
BAW79D
BAW78
BAW78D
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SOT89 MARKING CODE 43
Abstract: No abstract text available
Text: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage BAW78D BAW79D ! Type BAW78D BAW79D ! Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW78.
/BAW79.
BAW78D
BAW79D
BAW78D
50/60Hz,
BAW78D,
BAW79D,
SOT89 MARKING CODE 43
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marking code TS
Abstract: No abstract text available
Text: BAW78./BAW79. Silicon Switching Diodes Switching applications High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW78.
/BAW79.
BAW78D
BAW79D
BAW78D
BAW78D,
BAW79D,
marking code TS
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BAW78D
Abstract: BAW78 BAW79D tp200 marking GD
Text: BAW78./BAW79. Silicon Switching Diodes Switching applications High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW78.
/BAW79.
BAW78D
BAW79D
BAW78D,
BAW79D,
EHB00100
BAW78D
BAW78
BAW79D
tp200
marking GD
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Untitled
Abstract: No abstract text available
Text: BAW78./BAW79. Silicon Switching Diodes Switching applications High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW78.
/BAW79.
BAW78D
BAW79D
BAW78D
BAW78D,
BAW79D,
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MARKING N93
Abstract: 4446 FCX493 FCX593 fcx493ta
Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.
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FCX493
FCX593
FCX493TA
FCX493TC
MAX00
MARKING N93
4446
FCX493
FCX593
fcx493ta
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Untitled
Abstract: No abstract text available
Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet Case: SOT89 Low Saturation Voltage VCE sat < -500mV @ -0.5A Case Material: Molded Plastic, “Green” Molding Compound
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BCX51/
-500mV
J-STD-020
BCX54,
MIL-STD-202
DS35368
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Untitled
Abstract: No abstract text available
Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.
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FCX493
FCX593
FCX493TA
FCX493TC
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BSS225
Abstract: No abstract text available
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Ordering Code Tape and Reel Information Marking BSS225 SOT89
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BSS225
Q67042-S4266
E6327:
3000PCS/reel
BSS225
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marking A1 SOT89
Abstract: C1 SOT89 marking A2 SOT89 BAW79A BAW79B BAW79C BAW79D C123 Marking gg SOT89
Text: BAW79A.BAW79D Silicon Switching Diodes 1 Switching applications 2 High breakdown voltage 3 Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW79A GE 1 = A1 2 = C1/2 3 = A2 SOT89 BAW79B GF 1 = A1 2 = C1/2 3 = A2 SOT89
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BAW79A.
BAW79D
VPS05162
EHA07003
BAW79A
BAW79B
BAW79C
marking A1 SOT89
C1 SOT89
marking A2 SOT89
BAW79A
BAW79B
BAW79C
BAW79D
C123
Marking gg SOT89
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FCX619
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FCX619 50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V Case: SOT89 IC = 3A high Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound
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FCX619
220mV
AEC-Q101
J-STD-020
FCX619
DS33067
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2DB1188P
Abstract: P23Q
Text: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V Case: SOT89 IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A Case material: Molded Plastic, "Green" Molding Compound.
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2DB1188P/Q/R
800mV
2DD1766
AEC-Q101
J-STD-020
MIL-STD-202,
DS31144
2DB1188P
P23Q
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BCX5216QTA
Abstract: No abstract text available
Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet Case: SOT89 Low Saturation Voltage VCE SAT < -500mV @ -0.5A Case Material: Molded Plastic, “Green” Molding Compound
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BCX51/
-500mV
J-STD-020
BCX54,
MIL-STD-202
DS35368
BCX5216QTA
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Untitled
Abstract: No abstract text available
Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V Case: SOT89 IC = -1A Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound ICM = -1.5A Peak Pulse Current
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BCX51/
-500mV
BCX54,
AEC-Q101
DS35368
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state
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ZXTP2008Z
ZX5T949Z
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FCX690BTA
Abstract: SOT89 MARKING CODE .3B
Text: A Product Line of Diodes Incorporated Green FCX690B 45V NPN HIGH GAIN POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 45V Case: SOT89 IC = 2A high Continuous Collector Current Case material: molded plastic. “Green” molding compound.
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FCX690B
300mV
FCX790A
AEC-Q101
J-STD-020
MIL-STD-202,
FCX690B
DS33070
FCX690BTA
SOT89 MARKING CODE .3B
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AM/mcl d01 94V0
Abstract: No abstract text available
Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V Case: SOT89 IC = -1A Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound ICM = -1.5A Peak Pulse Current
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BCX51/
-500mV
J-STD-020
BCX54,
MIL-STD-202
DS35368
AM/mcl d01 94V0
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BSS225
Abstract: L6327
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes
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BSS225
L6327:
3000PCS/reel
BSS225
L6327
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MARKING KD
Abstract: BSS225
Text: Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 600 V R DS on ,max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated SOT89 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes
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BSS225
L6327:
3000PCS/reel
MARKING KD
BSS225
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Untitled
Abstract: No abstract text available
Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP
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ZXTP19100CZ
-100V
-130mV
ZXTN19100CZ
ZXTP19100CZTA
D-81541
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ZXTN19020DZ
Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Text: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor
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ZXTP19020DZ
-47mV
ZXTN19020DZ
D-81541
ZXTN19020DZ
ZXTP19020DZ
ZXTP19020DZTA
TS16949
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Untitled
Abstract: No abstract text available
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
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