9-GHz
Abstract: TOP MARKING C1 ROHM C100 ECG009 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm
Text: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz
|
Original
|
PDF
|
ECG009
900MHz
OT-89
ECG009
OT-89
AP-000192-000
AP-000194-000
AP-000487-000
AP-000515-000
AP-000516-000
9-GHz
TOP MARKING C1 ROHM
C100
JESD22-A113-B
MCH185A560JK
marking c7 sot-89
JESD22-A108-A
ROHM SOT89 MARKING
resistor de 27k ohm
|
GB11
Abstract: MSW11GB11-S89T MWS11GB11-G1 MWS11GB11-S1
Text: C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm 5V . The same RFIC will be available later in an advanced Microsemi
|
Original
|
PDF
|
MWS11-GB11-xx
OT-89
19dBm
GB11
MSW11GB11-S89T
MWS11GB11-G1
MWS11GB11-S1
|
JESD22-A113-B
Abstract: EC-1019
Text: EC-1019 PRODUCTION DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 3000 MHz Features Applications Broadband Gain Blocks DC to 3000 MHz 18.5 dB Gain at 1000 MHz 19 dBm Output P1dB at 1000 MHz 34 dBm Output IP3 at 1000 MHz 5.5 dB Noise Figure at 2000 MHz
|
Original
|
PDF
|
EC-1019
OT-89
EC-1019
AP-000194-000
AP-000192-000
AP-000487-000
SS-000115-000
JESD22-A113-B
|
PLCC-6 5050
Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Text: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case
|
Original
|
PDF
|
SA146RS
PLCC-6 5050
P-Channel mosfet 400v to220
pj 84
elmwood 2450
MOSFET 400V depletion p channel
240v n-channel depletion mosfet
mosfet driver 400v
ks 4290
P-Channel Depletion-Mode
HT0440LG
|
30 micro farad capacitor 6000 volt
Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
Text: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability
|
Original
|
PDF
|
ECG014
OT-89
ECG014
OT-89
SS-000122-000
30 micro farad capacitor 6000 volt
HBT transistor
j1 05075
LL1608-F33NK
MCH185A180JK
MCH185A560JK
7953
scr 50kA
ic 76660
|
Untitled
Abstract: No abstract text available
Text: MwT-A989SB 0.5-4 GHz Packaged FET June 2006 Features: • • • • • Designed for single voltage operations Ideal for 0.5 – 4.0 GHz High Linearity / High Dynamic Range Applications Excellent RF Performance: o 40 dBm IP3 o 65 dBc ACPR o 25 dBm P1dB o 17 dB SSG @ 2000MHz
|
Original
|
PDF
|
MwT-A989SB
2000MHz
OT-89
MwT-A989SB
|
InP HBT transistor
Abstract: HBT transistor BJT datasheet with i-v characteristics 1 micro farad capacitor high end amplifier schematics ECG003 MOTOROLA RF TRANSISTORS srf
Text: PRELIMINARY DATA SHEET ECG003 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications n n DC to 3000 MHz 39 dBm Typical OIP3 at 900 MHz 36 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 900 MHz
|
Original
|
PDF
|
ECG003
OT-89
ECG003
OT-89
SS-000375-000
InP HBT transistor
HBT transistor
BJT datasheet with i-v characteristics
1 micro farad capacitor
high end amplifier schematics
MOTOROLA RF TRANSISTORS srf
|
TN2524
Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Text: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)
|
Original
|
PDF
|
2N6660
2N6661
2N7000
2N7002
OT-23
2N7008
TN0104
TN0106
TN0110
VN2406
TN2524
SOT-89 N2
2N6660
2N6661
2N7000
2N7002
2N7008
TN0104
TN0106
TN0110
|
VN2460N8-G
Abstract: TRANSISTOR LIZ
Text: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
|
Original
|
PDF
|
VN2460
DSFP-VN2460
A102108
VN2460N8-G
TRANSISTOR LIZ
|
VN2450N8-G
Abstract: vn4ew
Text: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
|
Original
|
PDF
|
VN2450
DSFP-VN2450
A102108
VN2450N8-G
vn4ew
|
Untitled
Abstract: No abstract text available
Text: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain
|
Original
|
PDF
|
VN2460
DSFP-VN2460
A011409
|
marking AL sot89
Abstract: BP317 BST15 BST16 BST39 BST40
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST39; BST40 NPN high-voltage transistors Product specification Supersedes data of 1997 May 22 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistors BST39; BST40 FEATURES
|
Original
|
PDF
|
M3D109
BST39;
BST40
BST15
BST16.
BST39
SCA63
marking AL sot89
BP317
BST16
BST39
BST40
|
2108 npn transistor
Abstract: marking code P1D BP317 PXTA42 PXTA92
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA42 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 18 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistor PXTA42 FEATURES PINNING • Low current max. 100 mA
|
Original
|
PDF
|
M3D109
PXTA42
PXTA92.
MAM296
SCA63
115002/00/03/pp8
2108 npn transistor
marking code P1D
BP317
PXTA42
PXTA92
|
solenoid block valve
Abstract: solenoid valve 24v
Text: Supertex inc. FP0060 ±60V AC Switch with Current Fold-Back Protection Features ►► ►► ►► ►► ►► General Description Up to ±60V input voltage protection Low on resistance – 4.0Ω typical Current fold-back protection No external power supplies needed
|
Original
|
PDF
|
OT-89
FP0060
FP0060
24VAC
DSFP-FP0060
A041812
solenoid block valve
solenoid valve 24v
|
|
|
Untitled
Abstract: No abstract text available
Text: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low input and output leakage Low CISS and fast switching speeds High input impedance and high gain This enhancement-mode normally-off transistor utilizes a
|
Original
|
PDF
|
VN2450
DSFP-VN2450
A052209
|
CL2N8-G
Abstract: A0519
Text: CL2 Simple 90V, 20mA, Temperature Compensated Constant Current LED Driver IC Features General Description ► ► ► ► The Supertex CL2 is a high voltage, temperature compensated, constant current source. The device is trimmed to provide a constant current of 20mA±10% at an input voltage of 5.0
|
Original
|
PDF
|
O-243AA
OT-89)
O-252
A051909
CL2N8-G
A0519
|
JEDEC to 243
Abstract: 4 to 20ma current source circuit diagram marking code RAB AA
Text: CL1 Simple, 90V, 20mA, Temperature Compensated, Constant Current, LED Driver IC Features General Description ► ► ► ► The Supertex CL1 is a high voltage, temperature compensated, constant current source. The device is trimmed to provide a constant current of 20mA±5% at an input voltage of 45V. No
|
Original
|
PDF
|
O-243AA
OT-89)
O-252
C092409
JEDEC to 243
4 to 20ma current source circuit diagram
marking code RAB AA
|
StR 40000
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV29; BCV49 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 21 1999 Apr 08 Philips Semiconductors Product specification NPN Darlington transistors BCV29; BCV49 FEATURES
|
Original
|
PDF
|
M3D109
BCV29;
BCV49
BCV28
BCV48.
MAM300
SCA63
115002/00/05/pp8
StR 40000
|
transistor bt2
Abstract: 7430 ic data sheet BST16 BP317 BST15 BST39 BST40
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST15; BST16 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification PNP high-voltage transistors
|
Original
|
PDF
|
M3D109
BST15;
BST16
BST39
BST40.
BST15
SCA54
117047/00/02/pp8
transistor bt2
7430 ic data sheet
BST16
BP317
BST15
BST40
|
VP3203N3-G
Abstract: sivp
Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
|
Original
|
PDF
|
VP3203
DSFP-VP3203
A012009
VP3203N3-G
sivp
|
7430 ic data sheet
Abstract: data sheet IC 7430 Philips MARKING CODE Thermal considerations for SOT89 ALL SOT89 copper mumbai so sot89 SOT89 MARKING CODE 43 str 6707 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST39; BST40 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification NPN high-voltage transistors
|
Original
|
PDF
|
M3D109
BST39;
BST40
BST15
BST16.
BST39
SCA54
117047/00/02/pp8
7430 ic data sheet
data sheet IC 7430
Philips MARKING CODE
Thermal considerations for SOT89
ALL SOT89
copper mumbai
so sot89
SOT89 MARKING CODE 43
str 6707
BP317
|
PNP TRANSISTOR SOT89
Abstract: PXTA14 BP317 PXTA64
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA64 PNP Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 24 Philips Semiconductors Product specification PNP Darlington transistor
|
Original
|
PDF
|
M3D109
PXTA64
PXTA14.
MAM301
SCA54
117047/00/02/pp8
PNP TRANSISTOR SOT89
PXTA14
BP317
PXTA64
|
LF 358
Abstract: SOT89 marking cec BC868 BC869 BC869-16 BC869-25
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 01 Philips Semiconductors Product specification PNP medium power transistor
|
Original
|
PDF
|
M3D109
BC869
BC868.
BC869-25
SCA53
117047/00/02/pp8
LF 358
SOT89 marking cec
BC868
BC869
BC869-16
BC869-25
|
Untitled
Abstract: No abstract text available
Text: SC1638 3 Dc SDcco n Pv e r t e r January 30, 1998 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.conn DESCRIPTION FEATURES The SC1638 is a high efficiency step up DC-DC converter, particularly suitable for pager applications, using 1 to 2 battery cells. Only 3 external components
|
OCR Scan
|
PDF
|
SC1638
TEL805-498-2111
SC1638
50kHz
270pH
120pH
OT-89
|
