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Nexperia BUK6D385-100EX MOSFETs BUK6D385-100E/SOT1220/SOT1220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	BUK6D385-100EX	Reel	144,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.113	Buy Now
Nexperia PMPB23XNE,115 MOSFETs SOT1220 N CHAN 20V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	PMPB23XNE,115	Reel	60,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.126	Buy Now
Nexperia BUK6D81-80EX MOSFETs BUK6D81-80E/SOT1220/SOT1220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	BUK6D81-80EX	Reel	33,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.108	Buy Now
Nexperia PMPB29XNE,115 MOSFETs SOT1220 N CHAN 30V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	PMPB29XNE,115	Reel	27,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.091	Buy Now
Toshiba America Electronic Components SSM6K361NU,LF MOSFETs SOT1220 100V 3.5A N-CH MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SSM6K361NU,LF	Reel	27,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.126	Buy Now

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SOT122 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
SOT1220	NXP Semiconductors	Plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals	Original	PDF
SOT1220_115	NXP Semiconductors	DFN2020MD-6; reel pack; Standard orientation; 12NC ending 115	Original	PDF
SOT1220_125	NXP Semiconductors	DFN2020MD-6; Tape reel SMD; reversed product orientation 12NC ending 125	Original	PDF
SOT1221-1	NXP Semiconductors	Plastic, heatsink small outline package; 6 leads(flat)	Original	PDF
SOT1222-1	NXP Semiconductors	Plastic, heatsink small outline package; 6 leads	Original	PDF
SOT1223-1	NXP Semiconductors	Plastic, heatsink small outline package; 4 leads(flat)	Original	PDF
SOT1224-1	NXP Semiconductors	Plastic, heatsink small outline package; 4 leads	Original	PDF
SOT1225	NXP Semiconductors	Plastic extremely thin small outline package; no leads; 8 terminals; body 1.6 x 1.2 x 0.4 mm	Original	PDF
SOT1226	NXP Semiconductors	Plastic thermal enhanced extremely thin small outline package; no leads; 5 terminals	Original	PDF
SOT1227A	NXP Semiconductors	Flanged ceramic package; 2 mounting holes; 2 leads	Original	PDF
SOT1227B	NXP Semiconductors	Earless Flanged ceramic package; 2 leads	Original	PDF
SOT1228A	NXP Semiconductors	Flanged LDMOST ceramic package; 2 mounting holes; 4 leads	Original	PDF
SOT1229	NXP Semiconductors	Footprint information for reflow soldering of DFN1212-6 package	Original	PDF
SOT122D	NXP Semiconductors	studless ceramic package; 4 leads	Original	PDF

SOT122E	NXP Semiconductors	studded ceramic package; 4 leads	Original	PDF
SOT122F	NXP Semiconductors	studded ceramic package; 4 leads	Original	PDF

SOT122 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using	Original	PDF	PMPB15XP DFN2020MD-6 OT1220)
Untitled Abstract: No abstract text available Text: Reflow soldering footprint Footprint information for reflow soldering of DFN1212-6 package SOT1229 1.5 1.3 0.15 0.35 6x 0.15 0.3 0.25 (6x) 0.4 0.15 1.4 1.05 0.2 (6x) 0.84 0.94 1.04 0.4 0.35 (6x) solder lands 0.3 (6x) solder paste occupied area solder resist	Original	PDF	DFN1212-6 OT1229 sot1229
Untitled Abstract: No abstract text available Text: High PSRR LDOs Dual Channel LDOs with High PSRR Performance Package DFN1612-8 SOT1225 LD6935 Series Size (mm) 1.6 x 1.2 x 0.4 mm Ptot @ °C (mW) VIN (V) 600 Quiescent Output PSRR @ current noise typ 1 kHz (µA) * (µVrms) (dB) 1.75 5.5 30 50 80 IOUT (mA)	Original	PDF	DFN1612-8 OT1225) LD6935 LD6935L/xxH LD6935L/xxP LD6935L/xxHD LD6935L/xxPD LD6935L/2826H LD6935L/2826P LD6935L/2828H
Untitled Abstract: No abstract text available Text: Package outline HSOP4: plastic, heatsink small outline package; 4 leads SOT1224-1 B D A E X c y v HE A D1 D2 e 4 3 Q E2 E1 A A2 A3 A1 A4 pin 1 index θ Lp 1 2 b detail X w B 10 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A 3.9	Original	PDF	OT1224-1 sot1224-1
RF Wideband Transistors Abstract: No abstract text available Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .	Original	PDF	OT54variant OT122A OT143B OT143R OT172A1 OT172A2 OT223 OT323 OT343N OT343R RF Wideband Transistors
Untitled Abstract: No abstract text available Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using	Original	PDF	PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101
Untitled Abstract: No abstract text available Text: DF N 20 20 MD -6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using	Original	PDF	PMPB85ENEA DFN2020MD-6 OT1220) AEC-Q101
XB2B Abstract: philips 561 sot122e Text: PDF: 2001 Sep 03 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT122E D A Q c w1 M A M D1 N2 D2 A M N W N3 M1 X H detail X b2 b 4 C 3 H 1 b1 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions	Original	PDF	OT122E XB2B philips 561 sot122e
SOT122D Abstract: c 129 transistor Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studless ceramic package; 4 leads SOT122D D A Q c D1 H b 4 3 H 1 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c D D1 H Q mm 4.14 3.27 5.85	Original	PDF	OT122D SOT122D c 129 transistor
marking code 1s Abstract: No abstract text available Text: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using	Original	PDF	PMPB33XP DFN2020MD-6 OT1220) marking code 1s
Untitled Abstract: No abstract text available Text: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using	Original	PDF	NX2020P1 DFN2020MD-6 OT1220)
BFR94A Abstract: No abstract text available Text: tSsmi-Gonau.cko'i iPioaucti, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 BFR94A NPN 3.5 GHz wideband transistor DESCRIPTION PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope.	Original	PDF	BFR94A OT122E BFR94A BFH94. 45004B)
Untitled Abstract: No abstract text available Text: Package outline Studless ceramic package; 4 leads SOT122D D A Q c D1 H b 4 3 H 1 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c D D1 H Q mm 4.14 3.27 5.85 5.58 0.15 0.10 7.50 7.23 7.24 6.99 27.43	Original	PDF	OT122D
Untitled Abstract: No abstract text available Text: Package outline HSOP6F: plastic, heatsink small outline package; 6 leads flat SOT1221-1 D E X c B D3 A E3 y v HE A D1 D2 e1 e3 e2 b1 (2x) b2 (2x) 6 5 4 w B w B 3 E2 E1 A A2 A1 pin 1 index Q1 detail X 2 b (2x) 1 w B e v mm max nom min A A1 3.9 0.2 0.1 A2 b	Original	PDF	OT1221-1 sot1221-1

Untitled Abstract: No abstract text available Text: Package outline Earless Flanged ceramic package; 2 leads SOT1227B D A F 3 U1 w1 A B D1 D c w1 A B 1 H E1 U2 E 2 A w2 b B Q w2 5 mm b c D D1 H Q U1 U2 max 3.68 nom min 2.84 1.40 0.15 5.18 5.21 4.17 4.19 1.07 8.64 1.70 5.21 4.19 1.14 0.08 4.98 4.95 3.96 3.94 0.97	Original	PDF	OT1227B sot1227b
Untitled Abstract: No abstract text available Text: PMPB13XNE 30 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using	Original	PDF	PMPB13XNE DFN2020MD-6 OT1220)
Untitled Abstract: No abstract text available Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using	Original	PDF	PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101
marking code 1f Abstract: NXP SMD mosfet MARKING CODE Text: PMPB12UN 20 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using	Original	PDF	PMPB12UN DFN2020MD-6 OT1220) marking code 1f NXP SMD mosfet MARKING CODE
BFQ108 Abstract: BFQ10 SOT122A 45005B Text: Philips Sem iconductors Product specification - PNP 4 GHz wideband transistor pHILIPS INTERNATIONAL DESCRIPTION 5bE ]> 3 3 -/7 BFQ108 711GÖEb DD4S5S3 fllfl • PHIN PINNING The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily Intended for use	OCR Scan	PDF	BFQ108 711Gfl2b BFQ108 OT122A 45005B) BFQ10 SOT122A 45005B
Untitled Abstract: No abstract text available Text: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.	OCR Scan	PDF	bhS3T31 0031b53 BFQ68 OT122A
Untitled Abstract: No abstract text available Text: Philips Semiconductors tb53^31 0031b73 3=n APX Product specification NPN 4 GHz wideband transistor — — BFQ136 N AUER PHILIPS/DISCRETE b^E ]> PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. Ail leads are isolated	OCR Scan	PDF	0031b73 BFQ136 OT122A
BFR94 Abstract: BFR94A BS3C TRANSISTOR FQ BFR-94 Text: • ^ 53^31 0031070 ^7=5 IA PX , Product specification NPN 3.5 GHz wideband transistor BFR94A N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross	OCR Scan	PDF	BFR94A OT122E BFR94A BFR94. BFR94 BS3C TRANSISTOR FQ BFR-94
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN microwave power transistor LEE1015T FEATURES PINNING - SOT122A • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency	OCR Scan	PDF	OT122A LEE1015T
transistor 45 f 122 Abstract: BFQ54 sot 122 philips bfq54 Text: Philips Components BFQ54 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _À_ _ _ _ _ PNP 4 GHz WIDEBAND TRANSISTOR The BFQ54 is a pnp transistor in a SOT122 package, prim arily intended fo r MATV and microwave amplifiers, such as radar systems, spectrum analysers etc.	OCR Scan	PDF	bfq54 BFQ54 OT122 EiFQ34. IS21I2 1-IS11I2) 1-IS22I 45005B, transistor 45 f 122 sot 122 philips bfq54

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SOT122 Price and Stock

Nexperia BUK6D385-100EX

Nexperia PMPB23XNE,115

Nexperia BUK6D81-80EX

Nexperia PMPB29XNE,115

Toshiba America Electronic Components SSM6K361NU,LF

SOT122 Datasheets (16)

SOT122 Datasheets Context Search

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RF Wideband Transistors

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XB2B

SOT122D

marking code 1s

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BFR94A

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marking code 1f

BFQ108

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BFR94

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transistor 45 f 122