Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4160PANP
DFN2020-6
OT1118)
PBSS4160PAN.
PBSS5160PAP.
AEC-Q101
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DFN2020-6
Abstract: No abstract text available
Text: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB55XP
DFN2020-6
OT1118)
DFN2020-6
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marking code 2Q
Abstract: No abstract text available
Text: PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4260PANP
DFN2020-6
OT1118)
PBSS4260PAN.
PBSS5260PAP.
AEC-Q101
marking code 2Q
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 2 — 2 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB55XP
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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SMD TRANSISTOR MARKING 2e
Abstract: 2e SMD PNP TRANSISTOR
Text: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS5130PAP
DFN2020-6
OT1118)
PBSS4130PANP.
PBSS4130PAN.
AEC-Q101
SMD TRANSISTOR MARKING 2e
2e SMD PNP TRANSISTOR
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npn transistor footprint
Abstract: No abstract text available
Text: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4260PAN
DFN2020-6
OT1118)
PBSS4260PANP.
PBSS5260PAP.
AEC-Q101
npn transistor footprint
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smd diode marking 2U
Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
Text: PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB95XNE
DFN2020-6
OT1118)
smd diode marking 2U
smd diode marking codes 2U
smd diode code marking 2U
marking 2U 28 diode
DIODE smd marking 2U
diode SMD marking code 2u
2U marking code diode smd
smd diode marking 2U 40
marking 2U diode smd
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g1 TRANSISTOR SMD MARKING CODE
Abstract: PMDPB55XP
Text: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 1 — 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench
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PMDPB55XP
OT1118
g1 TRANSISTOR SMD MARKING CODE
PMDPB55XP
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SOT1118
Abstract: PMDPB70XP NXP SMD TRANSISTOR MARKING CODE s1
Text: PMDPB70XP 30 V, dual P-channel Trench MOSFET Rev. 1 — 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench
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PMDPB70XP
OT1118
SOT1118
PMDPB70XP
NXP SMD TRANSISTOR MARKING CODE s1
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NXP SMD ic MARKING CODE
Abstract: No abstract text available
Text: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118
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PBSM5240PF
OT1118
NXP SMD ic MARKING CODE
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PMDPB70EN
Abstract: No abstract text available
Text: PMDPB70EN 30 V, dual N-channel Trench MOSFET Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB70EN
DFN2020-6
OT1118)
PMDPB70EN
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p-channel mosfet with diode sot89
Abstract: PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA
Text: NXP leadless, 2 x 2 mm SOT1061 and SOT1118 packages Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of
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OT1061
OT1118
OT1061)
OT1118)
ap6545UP
PMFPB6532UP
p-channel mosfet with diode sot89
PMFPB6532
PMFPB6545
AEC-Q101-qualified
PMEG30
MOSFET455
PBSS304PX
PMEG3020CPA
PMEG4010CPA
PMEG2020CPA
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS5160PAP
DFN2020-6
OT1118)
PBSS4160PANP.
PBSS4160PAN.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: Package outline HUSON6: plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm bp 6x v A B A B D SOT1118 A E A1 terminal 1 index area detail X C terminal 1 index area Lp (6x) y y1 C e 1 3 (8x) E1 (2x) 6 X
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OT1118
sot1118
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Untitled
Abstract: No abstract text available
Text: PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4130PANP
DFN2020-6
OT1118)
PBSS4130PAN.
PBSS5130PAP.
AEC-Q101
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
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PMDPB58UPE
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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TRANSISTOR SMD MARKING CODE 2P
Abstract: DFN2020 transistor marking codes 2P transistor footprint
Text: PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS5260PAP
DFN2020-6
OT1118)
PBSS4260PANP.
PBSS4260PAN.
AEC-Q101
TRANSISTOR SMD MARKING CODE 2P
DFN2020
transistor marking codes 2P
transistor footprint
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Untitled
Abstract: No abstract text available
Text: NXP PNP low VCEsat BISS/Trench MOSFET module PBSM5240PF in SOT1118 Unique 2-in-1 solution in an ultra-small leadless SOT1118 package This groundbreaking solution enables slim mobile devices and delivers best-in-class thermal performance to support higher currents and longer lifetimes.
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PBSM5240PF
OT1118
OT1118
PBSM5240PF
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SOT1118
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of HUSON6 package SOT1118 2.1 0.65 0.49 0.65 0.49 0.3 6x 0.4 (6×) 0.875 1.05 1.15 (2×) (2×) 2.25 0.875 0.35 (6×) 0.72 (2×) 0.45 (6×) 0.82 (2×) solder land solder land plus solder paste
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OT1118
sot1118
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marking code 1L
Abstract: NXP MARKING 1l
Text: 020 -6 PMDPB42UN DF N2 20 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB42UN
DFN2020-6
OT1118)
marking code 1L
NXP MARKING 1l
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Untitled
Abstract: No abstract text available
Text: 020 -6 PMDPB85UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
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PMDPB85UPE
DFN2020-6
OT1118)
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marking code 2R
Abstract: No abstract text available
Text: PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat BISS transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4112PAN
DFN2020-6
OT1118)
PBSS4112PANP.
PBSS5112PAP.
AEC-Q101
marking code 2R
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NPN TRANSISTOR SMD MARKING CODE B2
Abstract: DFN2020-6
Text: PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat BISS transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4230PAN
DFN2020-6
OT1118)
PBSS4230PANP.
PBSS5230PAP.
AEC-Q101
NPN TRANSISTOR SMD MARKING CODE B2
DFN2020-6
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 1 — 18 January 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using
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PMDPB65UP
OT1118
NXP SMD TRANSISTOR MARKING CODE s1
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