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    SOT-363 MARKING BF Search Results

    SOT-363 MARKING BF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-363 MARKING BF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6c2 transistor

    Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
    Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor


    Original     		PDF OT-363 Q62702-F1645 Dec-18-1996 6c2 transistor transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS

    VPS05604

    Abstract: bfs 11
    Text: BFS 17S NPN Silicon RF Transistor 4  For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363


    Original     		PDF VPS05604 EHA07196 OT-363 Oct-25-1999 VPS05604 bfs 11

    transistor marking 7D

    Abstract: MUN5214DW1T1G SMUN5213DW1T1G transistor marking code 7e SOT363 MARKING CODE 7M SMUN5235DW1T1G
    Text: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with


    Original     		PDF MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1GSeries MUN5211DW1T1G OT-363 MUN5211DW1T1/D transistor marking 7D MUN5214DW1T1G SMUN5213DW1T1G transistor marking code 7e SOT363 MARKING CODE 7M SMUN5235DW1T1G

    MUN5233DW1T1G

    Abstract: MUN5214DW1T1G mun5215dw1t1g MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G SOT363 MARKING CODE 7N
    Text: MUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5211DW1T1G MUN5211DW1T1G OT-363 MUN5211DW1T1/D MUN5233DW1T1G MUN5214DW1T1G mun5215dw1t1g MUN5212DW1T1G MUN5213DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G SOT363 MARKING CODE 7N

    Untitled

    Abstract: No abstract text available
    Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G, MBD770DWT1G MBD110DWT1/D

    Untitled

    Abstract: No abstract text available
    Text: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1Gâ MUN5211DW1T1G MUN5211DW1T1/D

    SMUN5211DW1T1G

    Abstract: SMUN5235DW1T1G SMUN5214DW1T1G NSVMUN5212 MUN5214DW1T1G SMUN5233DW1T1G MUN5211DW1T1G MUN5233DW1T1G
    Text: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1GSeries MUN5211DW1T1G OT-363 MUN5211DW1T1/D SMUN5211DW1T1G SMUN5235DW1T1G SMUN5214DW1T1G NSVMUN5212 MUN5214DW1T1G SMUN5233DW1T1G MUN5233DW1T1G

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Symbol Value Unit Collector-Emitter Voltage Rating VCEO – 300 Vdc Collector-Base Voltage


    Original     		PDF BF721T1 318E-04, O-261AA)

    SC-70ML

    Abstract: marking CER 5-pin
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 BASE 1 NPN SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc Collector-Base Voltage


    Original     		PDF BF720T1 318E-04, O-261AA) SC-70ML marking CER 5-pin

    H5 MARKING

    Abstract: marking 12 SOT-363 amplifier
    Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G, MBD770DWT1G OT-363 OT-23 SC-88 H5 MARKING marking 12 SOT-363 amplifier

    MBD110DW

    Abstract: MBD110DWT1G MBD330DW MBD330DWT1G MBD770DW MBD770DWT1G MMBD101LT1 MMBD301LT1 MMBD701LT1 SOT 363 marking code 06 low noise
    Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and


    Original     		PDF MBD110DWT1G, MBD330DWT1G, MBD770DWT1G OT-363 OT-363 OT-23 MBD110DWT1/D MBD110DW MBD110DWT1G MBD330DW MBD330DWT1G MBD770DW MBD770DWT1G MMBD101LT1 MMBD301LT1 MMBD701LT1 SOT 363 marking code 06 low noise

    SOT363 MARKING 3B

    Abstract: No abstract text available
    Text: BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors http://onsemi.com PNP Duals SOT−363/SC−88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


    Original     		PDF BC856BDW1T1G, SBC856BDW1T1GSeries, BC857BDW1T1G, SBC857BDW1T1GSeries, BC858CDW1T1G OT-363/SC-88 AEC-Q101 BC856, SBC856 SOT363 MARKING 3B

    SMUN5113DW1T1G

    Abstract: SMUN5111DW1T1G SOT 363 marking 67 MUN5114DW1T1G
    Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor


    Original     		PDF MUN5111DW1T1G SMUN5111DW1T1G OT-363 SC-88 419Bble MUN5111DW1T1/D SMUN5113DW1T1G SOT 363 marking 67 MUN5114DW1T1G

    Untitled

    Abstract: No abstract text available
    Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a


    Original     		PDF MUN5111DW1T1G SMUN5111DW1T1G OT-363 MUN5111DW1T1/D

    marking 12 SOT-363 amplifier

    Abstract: marking code 04 sot-363 SOT 363 marking code 06 low noise SOT 363 marking CODE T4
    Text: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G OT-363 OT-23 SC-88 marking 12 SOT-363 amplifier marking code 04 sot-363 SOT 363 marking code 06 low noise SOT 363 marking CODE T4

    SMUN5113DW1T1G

    Abstract: No abstract text available
    Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor


    Original     		PDF MUN5111DW1T1G SMUN5111DW1T1G MUN5111DW1T1/D SMUN5113DW1T1G

    MUN5111DW1T1G

    Abstract: MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G
    Text: MUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor


    Original     		PDF MUN5111DW1T1G OT-363 MUN5111DW1T1/D MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G

    Untitled

    Abstract: No abstract text available
    Text: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G MBD110DWT1/D

    SBC857B

    Abstract: BC856BDW1T1G BC857BDW1T1G SBC857CDW1T1G bc857 sot363 BC557 SBC856 SBC856BDW1T1G SBC857BDW1T1G marking 12 SOT-363 amplifier
    Text: BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals SOT−363/SC−88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier


    Original     		PDF BC856BDW1T1G, SBC856BDW1T1GSeries, BC857BDW1T1G, SBC857BDW1T1GSeries, BC858CDW1T1G OT-363/SC-88 AEC-Q101 BC856, SBC856 SBC857B BC856BDW1T1G BC857BDW1T1G SBC857CDW1T1G bc857 sot363 BC557 SBC856BDW1T1G SBC857BDW1T1G marking 12 SOT-363 amplifier

    BC856

    Abstract: BC857BDW1T1G
    Text: BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals SOT−363/SC−88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier


    Original     		PDF BC856BDW1T1G, SBC856BDW1T1Gâ BC857BDW1T1G, SBC857BDW1T1Gâ BC858CDW1T1G 363/SCâ BC856, SBC856 BC856BDW1T1/D BC856 BC857BDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor NPN Silicon BF393 COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 300 Vdc Collector – Base Voltage VCBO 300 Vdc Emitter – Base Voltage


    Original     		PDF BF393 226AA)

    Untitled

    Abstract: No abstract text available
    Text: That HEW LETT W L E M PACKARD 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-51063 Features Surface Mount SOT-363 SC-70 Package Applications Pin Connections and Package Marking QNPifTT Til • Ultra-Miniature Package • Internally Biased, Single 5 V


    OCR Scan     		PDF INA-51063 OT-363 SC-70) OT-363 OT-143 5965-9680E MM475

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current


    OCR Scan     		PDF Q62702-A1097 OT-363 40mmm 535bQ5 aH35fc

    SOT 363 marking code 62 low noise

    Abstract: bf362 bc238c
    Text: ,TELEFUNKEN ELECTRONIC file D fiRBOO^b Q00S201 2 • ALÛÛ ■ r - s t - z . } BF 362 • BF 363 TTEHLtHFODKlGStiMelectronic Creative Technologies Silicon NPN RF Planar Transistors Applications: BF 362: Gain controlled UHF/VHF Input stages 8F 363: Self oscillating mixer stages


    OCR Scan     		PDF Q00S201 569-GS SOT 363 marking code 62 low noise bf362 bc238c