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    SOT-353 MARKING VF Search Results

    SOT-353 MARKING VF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-353 MARKING VF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-353

    Abstract: marking 3U RB481K VF SOT353
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes SOT-353 RB481K SCHOTTLKY BARRIER DIODE FEATURES z Low current rectification z High reliability MARKING: 3U Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original     		PDF OT-353 RB481K CharactT-353 100mA 200mA SOT-353 marking 3U RB481K VF SOT353

    SOT-353

    Abstract: marking 3t RB480K
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes SOT-353 RB480K SCHOTTLKY BARRIER DIODE FEATURES z Low current rectification z High reliability MARKING: 3T Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original     		PDF OT-353 RB480K 100mA SOT-353 marking 3t RB480K

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UML2N Isolated transistor and diodes SOT-353 Features z The 2SC2412K and a diodes are housed independently In a package 1 MARKING：L2 TR MAXIMUM RATINGS Ta=25℃ unless otherwise noted


    Original     		PDF OT-353 OT-353 2SC2412K to150 100MHz 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes SOT-353 RB481K SCHOTTLKY BARRIER DIODE 5 FEATURES z Low current rectification z High reliability 1 4 2 3 MARKING: 3U Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃


    Original     		PDF OT-353 OT-353 RB481K 100mA 200mA

    SDS914

    Abstract: SUD493Z DX SOT
    Text: SUD493Z Semiconductor Silicon epitaxial planar Diode Features • • • • Ultra high speed Fast reverse recovery time : trr=1.6ns Typ. Small total capacitance : CT=2.2pF(Typ.) Four SDS914 chips in SOT-353 package Ordering Information Type NO. Marking


    Original     		PDF SUD493Z SDS914 OT-353 OT-343 SUD493Z DX SOT

    Untitled

    Abstract: No abstract text available
    Text: SUD493Z Semiconductor Silicon epitaxial planar Diode Features • • • • Ultra high speed Fast reverse recovery time : trr=1.6ns Typ. Small total capacitance : CT=2.2pF(Typ.) Four SDS914 chips in SOT-353 package Ordering Information Type NO. Marking


    Original     		PDF SUD493Z SDS914 OT-353 SUD493Z OT-343 KSD-D5Q001-000

    SOT-353

    Abstract: diode marking x6 ic 353 datasheet SDS914 SUD492H ksd50 sot-353 marking X6
    Text: SUD492H Semiconductor Silicon epitaxial planar Diode Features • • • • Ultra high speed Fast reverse recovery time : trr=1.6ns Typ. Small total capacitance : CT=2.2pF(Typ.) Three SDS914 chips in SOT-353 package Ordering Information Type NO. Marking


    Original     		PDF SUD492H SDS914 OT-353 OT-353 KSD-5001-001 100mA SOT-353 diode marking x6 ic 353 datasheet SUD492H ksd50 sot-353 marking X6

    sot-353 marking X6

    Abstract: No abstract text available
    Text: SUD492H Semiconductor Silicon epitaxial planar Diode Features • • • • Ultra high speed Fast reverse recovery time : trr=1.6ns Typ. Small total capacitance : CT=2.2pF(Typ.) Four SDS914 chips in SOT-353 package Ordering Information Type NO. Marking


    Original     		PDF SUD492H SDS914 OT-353 SUD492H OT-353 KSD-5001-001 sot-353 marking X6

    marking 3t

    Abstract: No abstract text available
    Text: SCS480N VOLTAGE 45 V, 1 A Small Signal Schottky Plastic-Encapsulate Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-353 FEATURES ♦ ♦ A E L Low current rectification High reliability B MARKING


    Original     		PDF SCS480N OT-353 17-Nov-2009 100mA marking 3t

    SCS481N

    Abstract: marking 3U
    Text: SCS481N VOLTAGE 30 V, 0.2 A Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-353 A E L FEATURES ♦ ♦ B Low Current Rectification High Reliability C 4 C 5 F H DG K REF. MARKING:3U


    Original     		PDF SCS481N OT-353 100mA 200mA 17-Nov-2009 SCS481N marking 3U

    ON Semiconductor marking

    Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
    Text: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


    Original     		PDF DLD601/D Mar-2001 r14525 DLD601 ON Semiconductor marking fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline

    marking CODE W2D

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1G126 353/SC marking CODE W2D marking w2d

    V = Device Code

    Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


    Original     		PDF MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08

    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64

    V = Device Code

    Abstract: No abstract text available
    Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G02 353/SC V = Device Code

    V = Device Code

    Abstract: MC74VHC1G00
    Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G00 353/SC V = Device Code

    V = Device Code

    Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
    Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G86 353/SC V = Device Code vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A

    V = Device Code

    Abstract: diode T132
    Text: MC74VHC1GU04 Unbuffered Inverter The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1GU04 MC74VHCU04 MC74VHC1G04 MC74VHC04 V = Device Code diode T132

    torex new marking

    Abstract: TOSHIBA el suffix V = Device Code
    Text: MC74VHC1G03 2-Input NOR Gate with Open Drain Output The MC74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low


    Original     		PDF MC74VHC1G03 torex new marking TOSHIBA el suffix V = Device Code

    ON Semiconductor marking

    Abstract: marking code v6 29 DIODE V = Device Code diode Marking code v3 marking t08 TOSHIBA el suffix Wafer Fab Plant Codes ST t02 y95 H2 sc88a
    Text: MC74VHC1GT02 2-Input NOR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT02 is a single gate 2–input NOR fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1GT02 ON Semiconductor marking marking code v6 29 DIODE V = Device Code diode Marking code v3 marking t08 TOSHIBA el suffix Wafer Fab Plant Codes ST t02 y95 H2 sc88a

    ON Semiconductor marking

    Abstract: fairchild marking codes sot-23 SOT-353 MARKING w5 date code marking toshiba Nand M2 MARKING SOT23 MARKING W2 SOT23 sot353 vk sot-353 cf sot-353 on semi marking code sot T138-A
    Text: MC74VHC1GT00 2-Input NAND Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT00 is a single gate 2–input NAND fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1GT00 ON Semiconductor marking fairchild marking codes sot-23 SOT-353 MARKING w5 date code marking toshiba Nand M2 MARKING SOT23 MARKING W2 SOT23 sot353 vk sot-353 cf sot-353 on semi marking code sot T138-A

    ON Semiconductor marking

    Abstract: marking VU sot363 V = Device Code SOT23 "Marking Code" t04 ON TSOP6 MARKING 6L marking 62 ON Semi VM MARKING CODE SOT353 marking code V6 diode
    Text: MC74VHC1GT86 2-Input Exclusive OR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky


    Original     		PDF MC74VHC1GT86 ON Semiconductor marking marking VU sot363 V = Device Code SOT23 "Marking Code" t04 ON TSOP6 MARKING 6L marking 62 ON Semi VM MARKING CODE SOT353 marking code V6 diode

    SOT-353 MARKING VL

    Abstract: No abstract text available
    Text: MC74VHC1G125 Noninverting 3-State Buffer The MC74VHC1G125 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1G125 SOT-353 MARKING VL