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    SOT-23 MOSFET MARKING AK Search Results

    SOT-23 MOSFET MARKING AK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MOSFET MARKING AK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sot-23 mosfet Marking SA s

    Abstract: BSS123LT1G marking SA sot-23 BSS123LT1 BSS123LT3 BSS123LT3G sot-23 mosfet Marking ak
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS on = 6 W N−Channel 3 MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Gate−Source Voltage


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    BSS123LT1 OT-23 BSS123LT1/D sot-23 mosfet Marking SA s BSS123LT1G marking SA sot-23 BSS123LT1 BSS123LT3 BSS123LT3G sot-23 mosfet Marking ak PDF

    NTR4502PT1G

    Abstract: NTR4502P NTR4502PT1 NTR4502PT3 NTR4502PT3G STR22
    Text: NTR4502P Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23 Features • • • • http://onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS ON for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm)


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    NTR4502P OT-23 OT-23 NTR4502P/D NTR4502PT1G NTR4502P NTR4502PT1 NTR4502PT3 NTR4502PT3G STR22 PDF

    TR7 SOT

    Abstract: TR7 sot-23 MARKING TR7 SOT-23 tr/MJE13006/TR7 sot-23
    Text: NTR2101P Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23 Features Leading Trench Technology for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint (3 x 3 mm) This is a Pb−Free Device http://onsemi.com


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    NTR2101P OT-23 OT-23 NTR2101P/D TR7 SOT TR7 sot-23 MARKING TR7 SOT-23 tr/MJE13006/TR7 sot-23 PDF

    tr4 surface mount

    Abstract: MOSFET P-channel SOT-23 sot-23 P-Channel MOSFET NTR4101PT1G "battery protection" marking code tr4 MARKING QG 6 PIN NTR4101P ntr4101p datasheet NTR4101PT1
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


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    NTR4101P OT-23 OT-23 NTR4101P/D tr4 surface mount MOSFET P-channel SOT-23 sot-23 P-Channel MOSFET NTR4101PT1G "battery protection" marking code tr4 MARKING QG 6 PIN NTR4101P ntr4101p datasheet NTR4101PT1 PDF

    SOT-23 tr4

    Abstract: sot 23 tr4 NTR4101PT1 NTR4101P NTR4101PT1G
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


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    NTR4101P OT-23 OT-23 NTR4101P/D SOT-23 tr4 sot 23 tr4 NTR4101PT1 NTR4101P NTR4101PT1G PDF

    BSS123LT1G

    Abstract: BSS123LT1 BSS123LT3 BSS123LT3G
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS on = 6 W N−Channel 3 MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage VDSS


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    BSS123LT1 OT-23 BSS123LT1/D BSS123LT1G BSS123LT1 BSS123LT3 BSS123LT3G PDF

    BSS123LT1

    Abstract: BSS123LT1G BSS123LT3 BSS123LT3G
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS on = 6 W N−Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage


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    BSS123LT1 OT-23 BSS123LT1/D BSS123LT1 BSS123LT1G BSS123LT3 BSS123LT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS on = 6 W N−Channel 3 MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage VDSS


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    BSS123LT1 OT-23 BSS123LT1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features • Low RDS on Provides Higher Efficiency and Extends Battery Life http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −20 V 550 mW @ −10 V −400 mA Applications • • • •


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    NTR0202PL OT-23 NTR0202PL/D PDF

    NTR1P02LT1

    Abstract: No abstract text available
    Text: NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical


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    NTR1P02LT1 OT-23 NTR1P02LT1/D PDF

    N3 SOT-23

    Abstract: sot-23 mosfet Marking ak
    Text: MGSF1N03LT1 Preferred Device Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical


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    MGSF1N03LT1 OT-23 OT-23 MGSF1N03LT1/D N3 SOT-23 sot-23 mosfet Marking ak PDF

    MGSF1N03LT3

    Abstract: MGSF1N03LT3G MGSF1N03LT1
    Text: MGSF1N03LT1 Preferred Device Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical


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    MGSF1N03LT1 OT-23 OT-23 MGSF1N03LT1/D MGSF1N03LT3 MGSF1N03LT3G MGSF1N03LT1 PDF

    NTR4501N

    Abstract: NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G
    Text: NTR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available


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    NTR4501N OT-23 OT-23 NTR4501N/D NTR4501N NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G PDF

    RG 701

    Abstract: NTR1P02T1 NTR1P02T3
    Text: NTR1P02T1 Power MOSFET −20 V, −1 A, P−Channel SOT−23 Package Features • Ultra Low On−Resistance Provides Higher Efficiency http://onsemi.com V BR DSS RDS(on) TYP ID MAX −20 V 148 mW @ −10 V −1.0 A P−Channel D Applications • • • •


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    NTR1P02T1 OT-23 NTR1P02T1/D RG 701 NTR1P02T1 NTR1P02T3 PDF

    STP4119

    Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
    Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices


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    SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a PDF

    Untitled

    Abstract: No abstract text available
    Text: LMP8645, LMP8645HV www.ti.com SNOSB29F – NOVEMBER 2009 – REVISED MARCH 2013 LMP8645/LMP8645HV Precision High Voltage Current Sense Amplifier Check for Samples: LMP8645, LMP8645HV FEATURES DESCRIPTION • • The LMP8645 and the LMP8645HV are precision


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    LMP8645, LMP8645HV SNOSB29F LMP8645/LMP8645HV LMP8645 LMP8645HV PDF

    BSS84

    Abstract: BSS84 MARKING CODE BSS84 marking code SOT-23 marking code 84L SOT-23
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance Low Gate Threshold Voltage


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    BSS84 OT-23 2002/95/EC BSS84 T/R13 BSS84 MARKING CODE BSS84 marking code SOT-23 marking code 84L SOT-23 PDF

    BSS84

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance Low Gate Threshold Voltage


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    BSS84 OT-23 BSS84 T/R13 PDF

    Aromat RSL2D-5V

    Abstract: aromat relay aromat relay JS1E Aromat relays NUD3105 NUD3105LT1 NUD3105LT1G jw4d
    Text: NUD3105 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps , and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It


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    NUD3105 NUD3105/D Aromat RSL2D-5V aromat relay aromat relay JS1E Aromat relays NUD3105 NUD3105LT1 NUD3105LT1G jw4d PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage


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    BSS84 OT-23 2002/95/EC IEC61249 OT-23 MIL-STD-750 Method2026 BSS84 T/R13 PDF

    marking code 84L SOT-23

    Abstract: sot-23 MARKING CODE GS 5 BSS84 marking code SOT-23
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage


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    BSS84 OT-23 2002/95/EC IEC61249 MIL-STD-750 Method2026 BSS84 T/R13 marking code 84L SOT-23 sot-23 MARKING CODE GS 5 BSS84 marking code SOT-23 PDF

    12v dc power supply with sg3526

    Abstract: MAC97A6 630 LM7580 tl494 inverter 12v 230v design smps 500 watt TL494 MRC 433 mosfet uc3842a uc3842b mc44604p bc558b MTP5P25
    Text: SGJ388/D Aug-2000 半導体総合カタログ 半 導 体 総 合 カ タ ロ グ および はSemiconductor Components Industries, LLC(SCILLC)の商標です。SCILLCはここに記載の製品のすべてについて


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    SGJ388/D Aug-2000 UC3845BV ULN2003A VN0300L VN0610LL VN2222LL VN2406L 12v dc power supply with sg3526 MAC97A6 630 LM7580 tl494 inverter 12v 230v design smps 500 watt TL494 MRC 433 mosfet uc3842a uc3842b mc44604p bc558b MTP5P25 PDF

    aromat 5v 8 pin relay

    Abstract: No abstract text available
    Text: NUD3105 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps , and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It


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    NUD3105 NUD3105/D aromat 5v 8 pin relay PDF

    pj 989

    Abstract: No abstract text available
    Text: 47E J> m S23SbOS 0Q243GS S • S I E G 1^31-35 Silicon N Channel MOSFET Tetrode BF 989 _ SIEMENS AKTIENGESELLSCHAF • • _ For amplifier and mixer stages in UHF and VHF TV tuners Low input and output capacitance Type Marking Ordering code


    OCR Scan
    S23SbOS 0Q243GS Q62702-F874 Q62702-F969 fi23Sb05 BF989 pj 989 PDF