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    SOT-23 MARKING MB Search Results

    SOT-23 MARKING MB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148A/SE/CC/CA SOT-23 SWITCHING DIODES FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: MMBD4148A:5H MMBD4148CA :D6


    Original     		PDF OT-23 MMBD4148A/SE/CC/CA OT-23 MMBD4148A MMBD4148CA MMBD4148CC MBD4148SE

    BAS70

    Abstract: No abstract text available
    Text: BAS70 SOT-23 SURFACE MOUNT SCHOTTKY DIODE FEATURES * Low Turn-on voltage * Fast switching * Ultra-small surface mount package * Also available in lead free version * Marking BAS70 = 73 SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		PDF BAS70 OT-23 OT-23 MIL-STD-202E BAS70

    MMBT1015

    Abstract: marking a4 sot-23
    Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MBT1815 2 1 3 MARKING A4 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR


    Original     		PDF MMBT1015 150mA MBT1815 OT-23 QW-R206-015 MMBT1015 marking a4 sot-23

    TRANSISTOR b100

    Abstract: No abstract text available
    Text: UTCMMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR


    Original     		PDF UTCMMBT1815 150mA MBT1015 OT-23 QW-R206-014 TRANSISTOR b100

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR


    Original     		PDF MMBT1815 150mA MBT1015 OT-23 QW-R206-014

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR


    Original     		PDF MMBT1815 150mA MBT1015 OT-23 QW-R206-014

    mbt1015

    Abstract: MMBT1815
    Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR


    Original     		PDF MMBT1815 150mA MBT1015 OT-23 QW-R206-014 mbt1015 MMBT1815

    Untitled

    Abstract: No abstract text available
    Text: 350mW Switching Diode FMBD4148A/SE/CC/CA FMBD4148A/SE/CC/CA Data Sheet Mechanical Dimensions Description SOT-23 MARKING: FMBD4148A:5H Dimensions in mm FMBD4148CA :D6 FMBD4148CC :KD5 FMBD4148SE :D4 Maximum Ratings @TA=25C Parameter Symbol Peak Repetitive Peak reverse voltage


    Original     		PDF 350mW FMBD4148A/SE/CC/CA OT-23 FMBD4148A FMBD4148CA FMBD4148CC FMBD4148SE /150mA

    marking 301 sot-23

    Abstract: 301 marking code sot-23 MBD301G MMBD301LT1G marking 4T sot-23 MBD301 MMBD301 MMBD301LT1 MMBD301LT3 MMBD301LT3G
    Text: MBD301, MMBD301LT1 Preferred Device Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an


    Original     		PDF MBD301, MMBD301LT1 MMBD301 MBD301RS marking 301 sot-23 301 marking code sot-23 MBD301G MMBD301LT1G marking 4T sot-23 MBD301 MMBD301 MMBD301LT1 MMBD301LT3 MMBD301LT3G

    Untitled

    Abstract: No abstract text available
    Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G, MBD770DWT1G MBD110DWT1/D

    marking 12 SOT-363 amplifier

    Abstract: marking code 04 sot-363 SOT 363 marking code 06 low noise SOT 363 marking CODE T4
    Text: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G OT-363 OT-23 SC-88 marking 12 SOT-363 amplifier marking code 04 sot-363 SOT 363 marking code 06 low noise SOT 363 marking CODE T4

    SOT 363 marking CODE m4

    Abstract: marking code 12 SOT-363 amplifier MBD110DW MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1
    Text: MBD110DWT1, MBD330DWT1, MBD770DWT1 Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and


    Original     		PDF MBD110DWT1, MBD330DWT1, MBD770DWT1 OT-363 OT-363 OT-23 MBD110DWT1/D SOT 363 marking CODE m4 marking code 12 SOT-363 amplifier MBD110DW MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1

    MBD110DW

    Abstract: MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 marking code 04 sot-363
    Text: MBD110DWT1, MBD330DWT1, MBD770DWT1 Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and


    Original     		PDF MBD110DWT1, MBD330DWT1, MBD770DWT1 OT-363 OT-363 OT-23 MBD110DWT1/D MBD110DW MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 marking code 04 sot-363

    Untitled

    Abstract: No abstract text available
    Text: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G MBD110DWT1/D

    MBD101

    Abstract: marking 556C
    Text: ON Semiconductort MBD101 MMBD101LT1 Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer


    Original     		PDF MBD101 MMBD101LT1 MMBD101LT1 marking 556C

    H5 MARKING

    Abstract: marking 12 SOT-363 amplifier
    Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G, MBD770DWT1G OT-363 OT-23 SC-88 H5 MARKING marking 12 SOT-363 amplifier

    MBD110DW

    Abstract: MBD110DWT1G MBD330DW MBD330DWT1G MBD770DW MBD770DWT1G MMBD101LT1 MMBD301LT1 MMBD701LT1 SOT 363 marking code 06 low noise
    Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and


    Original     		PDF MBD110DWT1G, MBD330DWT1G, MBD770DWT1G OT-363 OT-363 OT-23 MBD110DWT1/D MBD110DW MBD110DWT1G MBD330DW MBD330DWT1G MBD770DW MBD770DWT1G MMBD101LT1 MMBD301LT1 MMBD701LT1 SOT 363 marking code 06 low noise

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other


    Original     		PDF MBD701 MMBD701LT1

    709 SOT23

    Abstract: marking 4T sot-23
    Text: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other


    Original     		PDF MBD301 MMBD301LT1 MBD301, MMBD301 709 SOT23 marking 4T sot-23

    MMBD501

    Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
    Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2


    OCR Scan     		PDF OT-23 OT-23 MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD501 MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MBAS16

    Untitled

    Abstract: No abstract text available
    Text: Temic BF799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features • • High power gain Low noise figure 1 R iJ— E3T 2 9+9280 BF799 Marking: G2 Plastic case SOT 23


    OCR Scan     		PDF BF799 BF799 500MHz 00127H4 DD12725

    Transistor K 799

    Abstract: marking G2 NPN planar RF transistor
    Text: Tem ic BF799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features • High power gain • Low noise figure 1 H TJ- - ET3 2 »9 2 8 0 BF799 Marking: G2 Plastic case SOT 23


    OCR Scan     		PDF BF799 BF799 500MHz 00127H4 Transistor K 799 marking G2 NPN planar RF transistor

    MMBTH24L

    Abstract: MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL
    Text: MOT OROL A SC XSTRS/R F 4bE D • b3b72SiJ OO^bSGB ? ■ MOTb 'T ^ - O j SOT-23 TRANSISTORS (continued) S w itch in g T ran sisto rs Pinout: 1-Base, 2-Emitter, 3-Collector Devices are listed in order of descending f f . Switching Time (ns) Device hre Marking


    OCR Scan     		PDF b3b72SiJ OT-23 MMBT2369L BSV52L MMBT2222L MMBT2222AI. MMBT3904T MMBT3638 MBT3640L MBT4403L MMBTH24L MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL

    MARKING a3 SOT-23

    Abstract: No abstract text available
    Text: Temic BF569/BF569R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For selfoscillating RF m ixer stages 1 R R E 3 1— 1 BF569 Marking: LH Plastic case SOT 23


    OCR Scan     		PDF BF569/BF569R BF569 BF569R llk40 D-74025 31-Oct-97 MARKING a3 SOT-23