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    SOT-23 MARKING LG Search Results

    SOT-23 MARKING LG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING LG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot marking code ZS

    Abstract: No abstract text available
    Text: BF 775A NPN Silicon RF Transistor • Especially suitable for amplifiers and TV-sat tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 775A SOT-23 LGs Q62702-F1250 1=B


    Original     		PDF OT-23 Q62702-F1250 Tst500 S21/S12| Dec-12-1996 sot marking code ZS

    marking 7002

    Abstract: No abstract text available
    Text: 2N7002 Mosfet N-Channel SOT-23 1. GATE 2. SOURCE 3. DRAIN Features — High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability — — — Marking: 7002 Dimensions in inches and (millimeters)


    Original     		PDF 2N7002 OT-23 500mA 200mA 115mA, marking 7002

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    IGBT Battery 120 watt Charger circuit diagrams

    Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
    Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .


    Original     		PDF BRD8016/D Nov-2000 r14525 IGBT Battery 120 watt Charger circuit diagrams tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    DIODE WJ SOt23

    Abstract: 7.a sot-23 marking BSs sot23
    Text: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on


    OCR Scan     		PDF OT-23 OT-23, 62702-S DIODE WJ SOt23 7.a sot-23 marking BSs sot23

    BAS 16 MARKING

    Abstract: marking A6s diode A6s sot 23 sot-23 MARKING A6S lg-330 lg330
    Text: SIEMENS Silicon Switching Diode BAS 16 • For high-speed switching Type Marking Ordering Code tape and reel BAS 16 A6s Q62702-F739 Pin Configuration Package1) SOT-23 * 01-o 1 CHA07002 Maximum Ratings Parameter Symbol


    OCR Scan     		PDF Q62702-F739 CHA07002 OT-23 BAS 16 MARKING marking A6s diode A6s sot 23 sot-23 MARKING A6S lg-330 lg330

    Bi 3101 A

    Abstract: transistor ITT 108 MMBT3904
    Text: MMBT3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBT3904 is recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter. Marking code 3N SOT-23 Plastic Package Weight approx. 0.008 g


    OCR Scan     		PDF MMBT3906 MMBT3904 OT-23 Bi 3101 A transistor ITT 108

    Q62702-C2371

    Abstract: No abstract text available
    Text: SIEMENS BCR 553 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=2.2kQ, Rz=2.2k£2 Type Marking Ordering Code Pin Configuration BCR 553 XBs 1=B Q62702-C2371 Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2371 OT-23 Q62702-C2371

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 148 NPN Silicon Digital Transistor ►Switching circuit, inverter, interface circuit, driver circuit » Built in bias resistor Ri=47kfl, R2=47kfi Type Marking Ordering Code Pin Configuration BCR 148 WEs Q62702-C2261 1 =B Package 2= E 3=C SOT-23


    OCR Scan     		PDF 47kfl, 47kfi) Q62702-C2261 OT-23 0235b05 Q12Q7b5 015D7bB

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 562 PNP Silicon Digital Transistor » Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7kü, R2=4.7kiì Type Marking Ordering Code Pin Configuration BCR 562 XUs Q62702-C2356 1=B Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2356 OT-23 a23SbOS G12CH03 QE35b05

    marking BSs sot23

    Abstract: BSS-229 s 100 139 004 BSS229 marking BSs sot23 siemens
    Text: SIEMENS SIPMOS Small-Signal Transistors VDS lD ^ D S o n • • • BSS 139 BSS 229 = 250 V = 0 .0 4 /0 .0 7 A = 100 Q N channel Depletion mode Packages: SOT-23, T O -9 2 1) Type Marking Ordering code fo r version in bulk Ordering code Ordering code


    OCR Scan     		PDF OT-23, Q62702-S575 Q62702-S567 Q62702-S567-P1 Q62702-S612 Q62702-S600 Q62702-S600-P1 marking BSs sot23 BSS-229 s 100 139 004 BSS229 marking BSs sot23 siemens

    SmD TRANSISTOR a77

    Abstract: smd marking code SSs
    Text: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138


    OCR Scan     		PDF BSS138 OT-23 Q67000-S566 Q67000-S216 E6327 E6433 fopu22 S35bQ5 Q133777 SQT-89 SmD TRANSISTOR a77 smd marking code SSs

    1SS SOT-23

    Abstract: 1SS TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC fllC D a^EDORb 0005275 R • AL6G BF 989 Marked with: M 89 YilLilFlUJNlKIIMl electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input' and Mixerstages especially for UHFTV-tuners up to 900 MHz


    OCR Scan     		PDF 569-GS 1SS SOT-23 1SS TRANSISTOR

    BU 508 transistor

    Abstract: FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3
    Text: TELEFUNKEN ELECTRONIC 17E J> • Ô^OO'îb 000^471 * ■ AL QG BU 508 DR 'V ITiyitFMlMKIM electronic Creato*"fechnotogies T-3 3 - I I Silicon NPN Power Transistor Applications: Horizontal deflection circuits in colour TV-receivers Features: • In tripple diffusion technique


    OCR Scan     		PDF T-33-13 DIN41 T0126 15A3DIN BU 508 transistor FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3

    BF 234 transistor

    Abstract: BC 194 TRANSISTORS transistor bf 196 Electronic car ignition circuit BF 194 npn transistor DIN I diode marking code BUX BF 194 transistor BUX37 transistor marking code 41 BF
    Text: 17E T> m TELEFUNKEN ELECTRONIC ÔRSOÜSfc. 000*1577 1 • ALG6 . B U X 37 TnMLUFSBMCSdiii] electronic C fe â h v i 1 ie h n o lo 6 * s Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application


    OCR Scan     		PDF 15A3DIN BF 234 transistor BC 194 TRANSISTORS transistor bf 196 Electronic car ignition circuit BF 194 npn transistor DIN I diode marking code BUX BF 194 transistor BUX37 transistor marking code 41 BF

    transistor bd 126

    Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
    Text: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


    OCR Scan     		PDF DIN41869 DIN125A 15A3DIN transistor bd 126 TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711

    TRANSISTOR BC 208

    Abstract: transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U
    Text: i l . •.-.— 17E D TELEFUNKEN ELECTRONIC ■ 0 1 2 0 0 ^ 0001451 1 BU 207 * BU 208 • BU 209 TTf Li(FTOKIM electronic C re itM le c h n o to g w s r - 33-07 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in colour TV-receivers


    OCR Scan     		PDF r-33-07 T0126 15A3DIN TRANSISTOR BC 208 transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U

    transistor BF 164

    Abstract: buv 47 i L61A
    Text: «I TELEFUNKEN ELECTRONIC 17E D WÊ Ô^SOO^fc. QDQTSM? 3 BUV 47 • BUV 47 A m iitPW K iN l electronic CrM lfW Tschnotog*«* T - 3 V 13 Silicon NPN Power Transistors Applications: Switching mods power supply, inverters, motor control and relay driver Features:


    OCR Scan     		PDF 15A3DIN transistor BF 164 buv 47 i L61A

    transistor BUX 83

    Abstract: bux c st bux bux 47 MARKING BUX bc 201 transistor st bux c Marking 47 transistor BUX transistor k 2718
    Text: 17E D TELEFUNKEN ELECTRONIC • â^SQQ^b OOCHSÔ1 BUX 47 • BÜX 47 A TTiiLSiPIUlMKIiM electronic CrMin*üKhnotoö*«* Silicon NPN Power Transistors ^ ^ Applications: Switching mode power supply, inverters, motor control, and relay driver Features: • In triple diffusion technique


    OCR Scan     		PDF 15A3DIN transistor BUX 83 bux c st bux bux 47 MARKING BUX bc 201 transistor st bux c Marking 47 transistor BUX transistor k 2718

    buv48

    Abstract: BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92
    Text: TELEFUNKEN ELECTRONIC 17E D • fl^SOEHb DOG^SSB BUV 48 • BUV 48 A ■¡nULKPHÄIN electronic CrwtN*Tfcchootog* Silicon NPN Power Transistors Applications: Switching mode power supply, inverters, motor control and relay driver Features; • In triple diffusiion technique


    OCR Scan     		PDF 15A3DIN buv48 BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92

    BF964

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC TdUHFÜSWIiia electronic filC D • fl^DO^b 0005254 1 * A L 6 G ~r- BF B r 964 j Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mlxerstages especially for VHF TV-tuners Futures:


    OCR Scan     		PDF 569-GS BF964

    BF960

    Abstract: transistor ft 960
    Text: TELEFUNKEN ELECTRONIC Ô1C D 0 1 2 0 0 % 000S530 T • ALG6 ■ r - 3 t TfEtLitFyKlKiKlelectronic ~ *-5 * BF 960 Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz


    OCR Scan     		PDF 000S530 569-GS BF960 transistor ft 960

    transistor Bf 966

    Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
    Text: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners


    OCR Scan     		PDF 00052b2 IAL66 ft-11 569-GS 000s154 hal66 if-11 transistor Bf 966 LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET