SOT-23 297 MARKING Search Results

SOT-23 297 MARKING Result Highlights (5)

Part	Manufacturer	Description
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TCR2EF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)

SOT-23 297 MARKING Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BAS19 Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol	Original	PDF	BAS19LT1, BAS20LT1, BAS21LT1 BAS19LT1 BAS20LT1 BAS19 BAS20 BAS21 r14525 BAS19 BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
BCW69 Abstract: BCW69LT1 BCW70 BCW70LT1 Text: ON Semiconductort BCW69LT1 BCW70LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –100 mAdc Collector Current — Continuous 3 1 DEVICE MARKING	Original	PDF	BCW69LT1 BCW70LT1 236AB) r14525 BCW69LT1/D BCW69 BCW69LT1 BCW70 BCW70LT1
MMBTA70LT1 Abstract: 50K MARKING SOT23 Text: ON Semiconductort General Purpose Transistor MMBTA70LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –100 mAdc Collector Current — Continuous 3 1 2 DEVICE MARKING	Original	PDF	MMBTA70LT1 236AF) r14525 MMBTA70LT1/D MMBTA70LT1 50K MARKING SOT23
1N916 Abstract: NSCT2907ALT1G NSCT2907ALT3G Text: NSCT2907ALT1G General Purpose Transistors PNP Silicon Features • These are Pb−Free Devices http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage	Original	PDF	NSCT2907ALT1G NSCT2907ALT1/D 1N916 NSCT2907ALT1G NSCT2907ALT3G
1N916 Abstract: NSCT2907ALT1G NSCT2907ALT3G Text: NSCT2907ALT1G General Purpose Transistors PNP Silicon Features • These are Pb−Free Devices http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage	Original	PDF	NSCT2907ALT1G NSCT2907ALT1/D 1N916 NSCT2907ALT1G NSCT2907ALT3G
M6H MARKING sot23 Abstract: MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 DIODE M5G Text: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts	Original	PDF	MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 236AB) r14525 MMBD352LT1/D M6H MARKING sot23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 DIODE M5G
MMBFJ175LT1 Abstract: MMBF175 Text: ON Semiconductort JFET Chopper MMBFJ175LT1 P–Channel — Depletion ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 V VGS r –25 V 3 1 2 THERMAL CHARACTERISTICS Characteristic	Original	PDF	MMBFJ175LT1 236AB) r14525 MMBF175LT1/D MMBFJ175LT1 MMBF175
BSS64LT1 Abstract: No abstract text available Text: ON Semiconductort Driver Transistor BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C	Original	PDF	BSS64LT1 r14525 BSS64LT1/D BSS64LT1
MMBFJ177LT1 Abstract: No abstract text available Text: ON Semiconductort JFET Chopper MMBFJ177LT1 P–Channel — Depletion MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r –25 Vdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W TJ, Tstg –55 to +150	Original	PDF	MMBFJ177LT1 236AB) r14525 MMBFJ177LT1/D MMBFJ177LT1
MMBV105GLT1 Abstract: marking C3 sot-23 Text: ON Semiconductort Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio	Original	PDF	MMBV105GLT1 236AB) r14525 MMBV105GLT1/D MMBV105GLT1 marking C3 sot-23
BAS21SLT1 Abstract: No abstract text available Text: BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: Class 1 ESD Rating – Machine Model: Class B http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage	Original	PDF	BAS21SLT1 r14525 BAS21SLT1/D BAS21SLT1
MMBV432LT1 Abstract: No abstract text available Text: ON Semiconductort Silicon Tuning Diode MMBV432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT–23 plastic package for	Original	PDF	MMBV432LT1 r14525 MMBV432LT1/D MMBV432LT1
MMBV609LT1 Abstract: marking C3 sot-23 Text: ON Semiconductort Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT–23 plastic package for	Original	PDF	MMBV609LT1 r14525 MMBV609LT1/D MMBV609LT1 marking C3 sot-23
MMBD914LT1 Abstract: No abstract text available Text: MMBD914LT1 Preferred Device High-Speed Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit VR 100 Vdc Reverse Voltage Forward Current Peak Forward Surge Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW http://onsemi.com 3 CATHODE 1 ANODE	Original	PDF	MMBD914LT1 r14525 MMBD914LT1/D MMBD914LT1

BCW68GLT1 Abstract: No abstract text available Text: ON Semiconductort BCW68GLT1 General Purpose Transistor PNP Silicon 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –800 mAdc Symbol Max	Original	PDF	BCW68GLT1 236AB) r14525 BCW68GLT1/D BCW68GLT1
BAL99LT1 Abstract: No abstract text available Text: ON Semiconductort Switching Diode BAL99LT1 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc 3 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300	Original	PDF	BAL99LT1 236AB) r14525 BAL99LT1/D BAL99LT1
BC817 Abstract: BC817-16LT1 BC817-25LT1 BC817-40LT1 Text: ON Semiconductort BC817-16LT1 BC817-25LT1 BC817-40LT1 General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 V Collector–Base Voltage VCBO 50 V Emitter–Base Voltage VEBO 5.0 V IC 500 mAdc Collector Current — Continuous	Original	PDF	BC817-16LT1 BC817-25LT1 BC817-40LT1 236AB) r14525 BC817 16LT1/D BC817-16LT1 BC817-25LT1 BC817-40LT1
BSV52LT1 Abstract: No abstract text available Text: ON Semiconductort Switching Transistor BSV52LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc IC 100 mAdc Collector Current — Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic	Original	PDF	BSV52LT1 r14525 BSV52LT1/D BSV52LT1
MMBD6050LT1 Abstract: No abstract text available Text: ON Semiconductort Switching Diode MMBD6050LT1 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg	Original	PDF	MMBD6050LT1 r14525 MMBD6050LT1/D MMBD6050LT1
MMBF170LT1 Abstract: MMBF170LT3 Text: MMBF170LT1 Power MOSFET 500 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 ms VGS VGSM	Original	PDF	MMBF170LT1 r14525 MMBF170LT1/D MMBF170LT1 MMBF170LT3
BCW65ALT1 Abstract: No abstract text available Text: ON Semiconductort BCW65ALT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 32 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 800 mAdc Symbol Max Unit PD 225	Original	PDF	BCW65ALT1 236AB) r14525 BCW65ALT1/D BCW65ALT1
1GM sot-23 transistor Abstract: 1GM sot-23 MMBTA05LT1 MMBTA06 MMBTA06LT1 MMBTA05 Text: MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA05 MMBTA06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage VEBO 4.0 Vdc	Original	PDF	MMBTA05LT1 MMBTA06LT1* MMBTA05 MMBTA06 r14525 MMBTA05LT1/D 1GM sot-23 transistor 1GM sot-23 MMBTA05LT1 MMBTA06 MMBTA06LT1 MMBTA05
NPN 200 VOLTS POWER TRANSISTOR Abstract: MMBT918LT1 Text: ON Semiconductort VHF/UHF Transistor MMBT918LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C	Original	PDF	MMBT918LT1 r14525 MMBT918LT1/D NPN 200 VOLTS POWER TRANSISTOR MMBT918LT1
BAV74LT1 Abstract: No abstract text available Text: ON Semiconductort Monolithic Dual Switching Diode BAV74LT1 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic	Original	PDF	BAV74LT1 236AB) r14525 BAV74LT1/D BAV74LT1

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SOT-23 297 MARKING Search Results

SOT-23 297 MARKING Result Highlights (5)

SOT-23 297 MARKING Datasheets Context Search

BAS19

BCW69

MMBTA70LT1

1N916

1N916

M6H MARKING sot23

MMBFJ175LT1

BSS64LT1

MMBFJ177LT1

MMBV105GLT1

BAS21SLT1

MMBV432LT1

MMBV609LT1

MMBD914LT1

BCW68GLT1

BAL99LT1

BC817

BSV52LT1

MMBD6050LT1

MMBF170LT1

BCW65ALT1

1GM sot-23 transistor

NPN 200 VOLTS POWER TRANSISTOR

BAV74LT1