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    SOP-8 MARKING CODE W3 Search Results

    SOP-8 MARKING CODE W3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    SOP-8 MARKING CODE W3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MB85R256FPF

    Abstract: 8A10 MB85R256F Marking code M19
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-3v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-3v0-E MB85R256F MB85R256F MB85R256FPF 8A10 Marking code M19

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00010-7v0-E MB85RC16V MB85RC16V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-7v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-7v0-E MB85R256F MB85R256F

    MB85RS16

    Abstract: 30f 124 equivalent
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-3v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00014-3v0-E MB85RS16 MB85RS16 30f 124 equivalent

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-6v0-E MB85R256F MB85R256F

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-6v0-E MB85R256F MB85R256F

    MB85R256FPF

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-2v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-2v0-E MB85R256F MB85R256F MB85R256FPF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00001-3v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16 • DESCRIPTION The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00001-3v0-E MB85RC16 MB85RC16

    MB85RC256VPF-G-JNERE2

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-3v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00017-3v0-E MB85RC256V MB85RC256V MB85RC256VPF-G-JNERE2

    MB85RC256

    Abstract: RC256V FPT-8P-M08 E21200 2006FUJITSU
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-0v01-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00017-0v01-E MB85RC256V MB85RC256V MB85RC256 RC256V FPT-8P-M08 E21200 2006FUJITSU

    MB85RC256

    Abstract: FPT-8P-M08 MB85RC256VPNF MB85RC256V
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-3v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00017-3v0-E MB85RC256V MB85RC256V MB85RC256 FPT-8P-M08 MB85RC256VPNF

    MB85RC256VPF-G-JNERE2

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-2v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00017-2v0-E MB85RC256V MB85RC256V MB85RC256VPF-G-JNERE2

    RC256V

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-4v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00017-4v0-E MB85RC256V MB85RC256V RC256V

    RS64V

    Abstract: schematic diagram ac to DC converter high o
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-1v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00015-1v0-E MB85RS64V MB85RS64V RS64V schematic diagram ac to DC converter high o

    RS256A

    Abstract: MB85RS256APNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-3v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00007-3v0-E MB85RS256A MB85RS256A RS256A MB85RS256APNF-G-JNERE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-2v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00012-2v0-E MB85RS64 MB85RS64

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-2v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00013-2v0-E MB85RC64V MB85RC64V

    LCC-8P-M04

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00001-6v0-E Memory FRAM 16 K 2 K  8 Bit I2C MB85RC16 • DESCRIPTION The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00001-6v0-E MB85RC16 MB85RC16 LCC-8P-M04

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-3v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00008-3v0-E MB85RS128A MB85RS128A

    RC16V

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-4v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00010-4v0-E MB85RC16V MB85RC16V RC16V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–6E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF MB85RC128 MB85RC128

    MB85RC64PNF-G-JNE1

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–6E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF MB85RC64 MB85RC64 MB85RC64PNF-G-JNE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-6v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00010-6v0-E MB85RC16V MB85RC16V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-5v1-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00010-5v1-E MB85RC16V MB85RC16V