EMERGENCY OFF PUSH BUTTON
Abstract: QN-001AC SONY car service manual circuits QN-008CLA CAR SECURITY SYSTEMS VIA DTMF QN-029BPL QN029BPL car service manual
Text: 3-862-046-11 1 CM-Z100 Portable PCS Telephone Operating Instructions SONY Wireless Hotline Number (USA only) If you have any questions or comments, please call: SONY WIRELESS HOTLINE 1-800-578-SONY (7669) 1998 Sony Electronics Inc. All rights reserved.
|
Original
|
PDF
|
CM-Z100
1-800-578-SONY
CM-Z100/01
100final
EMERGENCY OFF PUSH BUTTON
QN-001AC
SONY car service manual circuits
QN-008CLA
CAR SECURITY SYSTEMS VIA DTMF
QN-029BPL
QN029BPL
car service manual
|
SS-M9ED
Abstract: Ultrasonic Cleaning Transducer 80 watt woofer circuit woofer schematic ULTRASONIC cleaning transducers 80 Hz crossover loudspeaker SONY AUDIO CROSSOVER schematic cnc wiring medium density fibreboard
Text: SS-M9ED LOUDSPEAKER SYSTEM TECHNICAL DESCRIPTION 1999 Sony Electronics, Inc. Reproduction in whole or in part is prohibited without written permission. All rights reserved. Sony and Direct Stream Digital are trademarks of Sony. The SS-M9ED was designed to be an extremely high resolution, accurate and neutral
|
Original
|
PDF
|
|
sony 0642
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron
|
OCR Scan
|
PDF
|
2SK677H5
2SK677H5
D0G312b
sony 0642
|
Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT P RODS M^E D • 6362363 0003113 b «SONY 2SK676H51 SONY. AtGaAs/GaAs Low Noise Microwave HEM T GHIP Description Chip outline •Unit: jum The 2S K 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD M etal Organic Chemical Vapor Deposition . This 0.5 micron
|
OCR Scan
|
PDF
|
2SK676H51
2SK676H5
|
SGH5002F
Abstract: sony fl 901 M253 SGH5002F-01 SGH5002 SGH5002F-02 M2531 SGH5002F-05
Text: SONY CORP/COnPONENT PRODS M^E 3 • 5365353 SONY. S G 0DD31g7 H b » S O NY 5 0 0 2 F 1 AIGaAs/GaAs Low Noise Microwave HEM T Preliminary Description Package Outline Unit : mm SG H 5002F is an AIGaAs/GaAs HEM T fabricated by M O C V D Metal Organic Chemical Vapor
|
OCR Scan
|
PDF
|
00Q3127
SGH5002F
SGH5002F
SGH5002F-T6
M-253
SGH5002F05
sony fl 901
M253
SGH5002F-01
SGH5002
SGH5002F-02
M2531
SGH5002F-05
|
SONY hemt
Abstract: SGH5003F 12GHz 462-2 MAG SGH5003Ft6 SGH5003F01 130 sony sony 1217
Text: SONY C O R P / C O M P O N E N T PR OD S 4TE D Ô3fi23â3 0 0 0 3 1 3 1 ô « S O N Y SGH5003F SONY« AIGaAs/GaAs Low Noise Microwave HEMT, D escriptib it Package Outline * 7 “ ^ SGH5003F is an AIGaAs/GaAs HEMT fabricated by MOCVD M etal O rganic Chemical Vapor
|
OCR Scan
|
PDF
|
SGH5003F
SGH5003F
SGH5003F-T6
SGH5003F-05
T-31-25
f-12GHz
SONY hemt
12GHz
462-2 MAG
SGH5003Ft6
SGH5003F01
130 sony
sony 1217
|
SONY A 2509
Abstract: No abstract text available
Text: SONY C O R P / C O M P O N E N T P R O D S 0385303 0003135 S « S O N Y 4HE D SGH5612F SONY f — 2 5— A IG aA s/G aA s Low Noise Microwave, H EM T Description SGH5612F is an AIG^As/GaAs HEMTfabricatedby MOCVD Metal Organic Chemical Vapor Deposi tion . This HEMT features very low noise figure and
|
OCR Scan
|
PDF
|
SGH5612F
SGH5612F
SGH5612F-T6
T-31-25
12GHz,
SONY A 2509
|
2 Wavelength Laser Diode
Abstract: SLD304V SLD304V-1 SLD304V-2 SLD304V-21 SLD304V-3 marking PHO
Text: _ SLD304V SONY, lOOOmW High Power Laser Diode Description Package O utline Unit: mm SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output
|
OCR Scan
|
PDF
|
SLD304V
SLD304V
900mW
900mW)
2 Wavelength Laser Diode
SLD304V-1
SLD304V-2
SLD304V-21
SLD304V-3
marking PHO
|
Untitled
Abstract: No abstract text available
Text: SLD304V SONY» lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline
|
OCR Scan
|
PDF
|
SLD304V
SLD304V
900mW
|
Laser Diode 1550 nm
Abstract: SLD304
Text: SLD304V SONY, lOOOmW High Power Laser Diode Package Outline Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current
|
OCR Scan
|
PDF
|
SLD304V
SLD304V
900mW
EleSLD304V
--900m
Laser Diode 1550 nm
SLD304
|
Untitled
Abstract: No abstract text available
Text: SLD304V SONY, lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline
|
OCR Scan
|
PDF
|
SLD304V
SLD304V
900mW
|
SONY 171
Abstract: No abstract text available
Text: SONY SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Po = 90mW
|
OCR Scan
|
PDF
|
100mW
SLD301V
SS-00259,
SLD301V
SS00259
net/Sonylnfo/procurementinfo/ss00259/
M-248
LO-11)
SONY 171
|
SONY 171
Abstract: Sony laser
Text: SONY SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Po = 180mW
|
OCR Scan
|
PDF
|
200mW
SLD302V
180mW,
SLD302V
180mW
SS-00259,
SS00259
net/Sonylnfo/procurementinfo/ss00259/
SONY 171
Sony laser
|
oJ-50
Abstract: TCA 785 SLD302V SLD302V-1 SLD302V-2 SLD302V-21 SLD302V-3 laser diode cd sony
Text: SLD302V SONY, 200mW High Power Laser Diode Description SLD302V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Package Outline Unit: mm R•f •r«nct Features • High power Recommended power output Po=180mW
|
OCR Scan
|
PDF
|
SLD302V
200mW
SLD302V
180mW
180mW)
oJ-50
TCA 785
SLD302V-1
SLD302V-2
SLD302V-21
SLD302V-3
laser diode cd sony
|
|
|
Untitled
Abstract: No abstract text available
Text: SLD301V SONY. l O O m W High Power Laser Diode Description SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Po=90mW
|
OCR Scan
|
PDF
|
SLD301V
SLD301V
100nnW
|
2SK676
Abstract: GaAs FET HEMT Chips
Text: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high
|
OCR Scan
|
PDF
|
2SK676H5
2SK676H
2SK676
GaAs FET HEMT Chips
|
Untitled
Abstract: No abstract text available
Text: SLD303V SONY, 500mW High Power Laser Diode Description Package Outline U n it: mm SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power o utp ut • Small operating current
|
OCR Scan
|
PDF
|
SLD303V
500mW
SLD303V
500mW
|
SLD301V-21
Abstract: SLD301V SLD301 SLD301V-2 SLD301V-3 1R1H
Text: SLD301V SONY lO O m W High Power Laser Diode Description Package O utline U nit: mm SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current
|
OCR Scan
|
PDF
|
SLD301V
SLD301V
SLD301V-21
SLD301
SLD301V-2
SLD301V-3
1R1H
|
laser diode 780 nm cd
Abstract: sony tc SLD304V SLD304V-1 SLD304V-2 SLD304V-21 SLD304V-3 15C200
Text: SONY _ S L D 3 4 V | lOOOmW High Power Laser Diode_ For the availability of this product, please contact the sales office? D e scrip tio n SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD.
|
OCR Scan
|
PDF
|
SLD304V
SLD304V
900mW
900mW)
laser diode 780 nm cd
sony tc
SLD304V-1
SLD304V-2
SLD304V-21
SLD304V-3
15C200
|
SONY 171
Abstract: No abstract text available
Text: SONY SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method*1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which
|
OCR Scan
|
PDF
|
SLD322V
SLD300
SLD322V
SS-00259,
SS00259
net/Sonylnfo/procurementinfo/ss00259/
M-248
LO-11)
SONY 171
|
Untitled
Abstract: No abstract text available
Text: SONY SLP323V High Power Density 1 W Laser Diode Package Outline_Unit : mm Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method*’ . Compared to the R tr« SLD300 Series, this laser diode has a high brightness
|
OCR Scan
|
PDF
|
SLD323V
SLD300
SLP323V
SLD323V
|
Untitled
Abstract: No abstract text available
Text: SONY CXD2302Q 8-bit 50MSPS Video A/D Converter with Clamp Function Description The CXD2302Q is an 8-bit CMOS A/D converter for video with synchronizing clamp tunction. The adoption of 2 step-parallel method achieves low power consumption and a maximum conversion rate
|
OCR Scan
|
PDF
|
CXD2302Q
50MSPS
CXD2302Q
50MSPS.
50MSPS
125mW
applicatXD2302Q,
|
Untitled
Abstract: No abstract text available
Text: SLD301V SONY. lO O m W High P o w e r L aser Diode D e sc rip tio n SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. M O C V D : Metal Organic Chemical Vapor Deposition F e a tu re s • High power Recommended power output • Small operating current
|
OCR Scan
|
PDF
|
SLD301V
SLD301V
|
2SK566
Abstract: 2SK676 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1
Text: SONY CORP/COMPONENT PRODS 0 3 0 2 3 0 3 0 0 0 2 1 3 4 =1 IfiE D 2SK676 AIGaAs/GaAs Low Noise Microwave HEMT Description Package Outline Unit: mm The 2 SK 6 7 6 is an AIGaAs/GaAs HEMT fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET
|
OCR Scan
|
PDF
|
2SK676
power12
GD02137
T-31-25
12GHz
2SK566
2SK989
2SK677
2SK587
3SK165
2SK67-6
2SK9
2SK677-2
2SK676-1
|
