sonos Cypress Semiconductor
Abstract: sonos SONOS flash memory
Text: Press Release CYPRESS ACQUIRES SONOS TECHNOLOGY FOR EMBEDDED NON-VOLATILE MEMORY INTEGRATION Cost-Effective Technology to be Used in Microcontrollers, Timing Generators SAN JOSE, Calif., September 14, 1999 - Cypress Semiconductor Corp. NYSE:CY today announced
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FLASH370i
sonos Cypress Semiconductor
sonos
SONOS flash memory
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sonos
Abstract: No abstract text available
Text: FOR IMMEDIATE RELEASE CYPRESS LAUNCHES PROGRAMMABLE SYSTEM-ON-A-CHIP COMPANY Venture Startup to Leverage 8-Bit Cores of Industry-Leading USB Controllers To Provide PSoC Solutions For Fast-Growing Communications Markets SAN JOSE, Calif. - March 6, 2000 – Cypress Semiconductor Corporation NYSE: CY today announced
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EIA-709
Abstract: circuit for home automation sonos Cypress Semiconductor EIA709
Text: For Immediate Release Cypress Introduces the First 40 MHz Communications Processor For LONWORKS EIA-709.1 Control Networks Intelligent Control Processor Family Provides Easy Upgrade Path, High Speed and Low Cost To Drive Building Automation, Home Networking and Embedded Internet Control Applications
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EIA-709
ANSI/EIA709
circuit for home automation
sonos Cypress Semiconductor
EIA709
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energy meter block diagram
Abstract: smart meter circuit diagram Using nvsRAM in RAID Controller Applications CY14B256LA sonos SONOS flash memory
Text: Nonvolatile SRAM nvSRAM Basics AN6023 Author: Ravi Prakash Associated Project: No Associated Part Family: nvSRAMs Software Version: None Associated Application Notes: None Application Note Abstract This application note describes the basic operations of a nonvolatile static random access memory (nvSRAM), using a parallel
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AN6023
energy meter block diagram
smart meter circuit diagram
Using nvsRAM in RAID Controller Applications
CY14B256LA
sonos
SONOS flash memory
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130nm CMOS
Abstract: sonos Cypress Semiconductor sonos nvsram
Text: Non-Volatile Memory Trends By Rajesh Manapat, Non-Volatile Memory Business Unit Director, and Ritesh Mastipuram, Product Manager, Cypress Semiconductor Corp. Executive Summary This article focuses on emerging non-volatile memories and the differences between them. Some of these technologies are
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block diagram for speaking alarm clock
Abstract: sonos
Text: nvSRAMs Eclipse Battery-backed Memory By Doug Mitchell, Cypress Semiconductor Executive Summary Battery-backed Static RAMs have been an industry standard solution for protecting data from power interruption for decades, but they have always had intrinsic flaws related to battery reliability, additional manufacturing steps, and high total costs of
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AN6022
Abstract: sonos
Text: AN6022 - A Comparison between nvSRAMs and BBSRAMs AN6022 Author: Ravi Prakash Associated Project: No Associated Application Notes: None Application Note Abstract This application note describes the comparison of features, capabilities, and benefits between Cypress nvSRAM and
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AN6022
AN6022
sonos
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intel chips 8x930
Abstract: No abstract text available
Text: Press Release CYPRESS Q399: REVENUE $184.5 MILLION, EBG $0.24 RECORD REVENUE AND BOOKINGS San Jose, California, October 19, 1999 . . . . Cypress Semiconductor Corporation NYSE: CY today announced record revenue for the third quarter ended October 3, 1999, of $184.5 million, up 14.2% from the prior quarter’s
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AN6022
Abstract: SRAM 6T micrologic DS1225Y ds1225ab circuit diagram DS1225AB DS1250W M48Z512AY sonos BBSRAM
Text: A Comparison between nvSRAMs and BBSRAMs AN6022 Application Note Abstract This application note describes the comparison of features, capabilities, and benefits between Cypress nvSRAM and BBSRAMs. Introduction What is nvSRAM? With lead-free initiatives being implemented globally,
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AN6022
AN6022
SRAM 6T
micrologic
DS1225Y
ds1225ab circuit diagram
DS1225AB
DS1250W
M48Z512AY
sonos
BBSRAM
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14C88
Abstract: 14CA8 sonos 22C48 Plastic 28-pin 300 mil SOIC SIMTEK 16C88 11C68 12c68 130nm CMOS SONOS flash memory
Text: COMPANY OVERVIEW nvSRAM Features • Unlimited Writes and Reads Simtek Corporation NASDAQ : SMTK , headquartered in Colorado Springs, Colorado, delivers unique integrated NV + SRAM memory products that solve the tough write endurance problems in a variety of applications. Our customers
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20-year
14C88
14CA8
sonos
22C48
Plastic 28-pin 300 mil SOIC SIMTEK
16C88
11C68
12c68
130nm CMOS
SONOS flash memory
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energy meter block diagram
Abstract: SONOS flash memory AN52433 Serial NVSRAM CY14B064 0X96 Smart meter CY14B101P SOIC16 energy meter circuit diagram
Text: nvSRAM in Metering Applications AN52433 Authors: Santhosh Kumar Vojjala, Kendall Castor-Perry Associated Project: No Associated Part Family: CY14B256X, CY14B512X, CY14B101X Software Version: None Associated Application Notes: None Application Note Abstract
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AN52433
CY14B256X,
CY14B512X,
CY14B101X
energy meter block diagram
SONOS flash memory
AN52433
Serial NVSRAM
CY14B064
0X96
Smart meter
CY14B101P
SOIC16
energy meter circuit diagram
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AN68173
Abstract: No abstract text available
Text: Migrating from Serial Peripheral Interface SPI FRAM to SPI nvSRAM AN68173 Author: Shivendra Singh Associated Project: No Associated Part Family: CY14xxxxPA, CY14xxxxQxA Software Version: N/A Associated Application Notes: None Application Note Abstract AN68173 application note describes the hardware/software changes needed at the system level to migrate from SPI FRAM to
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AN68173
CY14xxxxPA,
CY14xxxxQxA
AN68173
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SPI EEPROM code flow diagram
Abstract: 16-SOIC
Text: Migrating from Serial Peripheral Interface SPI EEPROM to SPI nvSRAM AN68174 Author: Shivendra Singh Associated Project: No Associated Part Family: CY14xxxxPA, CY14xxxxQxA Software Version: None Associated Application Notes: None Application Note Abstract
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AN68174
CY14xxxxPA,
CY14xxxxQxA
AN68174
SPI EEPROM code flow diagram
16-SOIC
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MOSEL VITELEC
Abstract: No abstract text available
Text: FOR IMMEDIATE RELEASE Cypress Q300 Records: Revenue, $356.2 million; Earnings, EBG $0.70 per share; Bookings, $428 million San Jose, California, October 17, 2000 . . . Cypress Semiconductor Corporation NYSE: CY today announced record revenue of $356.2 million for the third quarter of fiscal year 2000 ended October
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papers
Abstract: conference system hyundai panel 10 Ronics Ronics Technology springer TOSHIBA flash memory yoshikawa national semiconductor "flash memory" ATM machine
Text: NVSMW 2000 General Chairman Mike Fliesler Advanced Micro Devices, USA Technical Chairman Financial Chairman Arthur Wang Krishna Parat Hyundai Microelectronics, USA Intel, USA Workshop Administrators Tonya Johnson Hyundai Microelectronics, USA Sunday, February 13 ‘2000
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9-11AM,
30-2PM
30-10PM,
30-12PM,
12noon-2PM
papers
conference system
hyundai panel 10
Ronics
Ronics Technology
springer
TOSHIBA flash memory
yoshikawa
national semiconductor "flash memory"
ATM machine
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echelon 3120
Abstract: 3120-E4 MOTOROLA neuron 3120 programmer B3120E2 CY7C53120E2 CY7C53120E4 MC143120E2 ECHELON PLT-10 neuron user guide CY7C5312E4
Text: Using the Cypress Semiconductor CY7C53120Ex Neuron Chips Introduction This application note introduces the first two members of the Cypress 3120 Neuron® Chip Family: CY7C53120E2 and CY7C3120E4. The former is a drop-in replacement for the popular Motorola MC143120E2, while the latter is an improved device with maximum input clock of 40 MHz and increased on-chip memory.
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CY7C53120Ex
CY7C53120E2
CY7C3120E4.
MC143120E2,
echelon 3120
3120-E4
MOTOROLA neuron 3120 programmer
B3120E2
CY7C53120E4
MC143120E2
ECHELON PLT-10
neuron user guide
CY7C5312E4
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Neuron Chip 3150 CYPRESS
Abstract: CY7C53210E2 AN1268 CY7C53120 CY7C53120E2 CY7C53120E4 CY7C53150 Neuron Chip 3150 sonos
Text: Overview of Cypress Neuron Devices AN1268 Author: Todd Dust Associated Project: None Associated Part Family: CY7C53210E2, CY7C53210E4, CY7C53150 Software Version: N/A Associated Application Notes: N/A Application Note Abstract An overview of the CY7C53210E2, CY7C53210E4, and CY7C53150 products is explained in this Application Note. This
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AN1268
CY7C53210E2,
CY7C53210E4,
CY7C53150
CY7C53150
CY7C53120
Neuron Chip 3150 CYPRESS
CY7C53210E2
AN1268
CY7C53120E2
CY7C53120E4
Neuron Chip 3150
sonos
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Untitled
Abstract: No abstract text available
Text: CY14V116F7 CY14V116G7 PRELIMINARY 16-Mbit nvSRAM with Asynchronous NAND Interface 16-Mbit nvSRAM with Asynchronous NAND Interface Features • Overview 16-Mbit nonvolatile static random access memory nvSRAM ❐ Performance up to 33 MT/s per I/O ❐ Maximum data throughput using x16 bus – 528 Mbps
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CY14V116F7
CY14V116G7
16-Mbit
30-ns
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Untitled
Abstract: No abstract text available
Text: CY14V116F7 CY14V116G7 PRELIMINARY 16-Mbit nvSRAM with Asynchronous NAND Interface 16-Mbit nvSRAM with Asynchronous NAND Interface Features Overview • Cypress nvSRAM combines high-performance SRAM cells with nonvolatile elements in a monolithic integrated circuit. The
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CY14V116F7
CY14V116G7
16-Mbit
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Untitled
Abstract: No abstract text available
Text: CY14V116F7 CY14V116G7 PRELIMINARY 16-Mbit nvSRAM with Asynchronous NAND Interface 16-Mbit nvSRAM with Asynchronous NAND Interface Features Overview • Cypress nvSRAM combines high-performance SRAM cells with nonvolatile elements in a monolithic integrated circuit. The
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CY14V116F7
CY14V116G7
16-Mbit
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Untitled
Abstract: No abstract text available
Text: CY14V101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using
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CY14V101Q3
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Untitled
Abstract: No abstract text available
Text: CY14V101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using
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CY14V101Q3
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OF SPI protocol
Abstract: CY14V101Q3
Text: CY14V101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using
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CY14V101Q3
OF SPI protocol
CY14V101Q3
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cy14mb064
Abstract: CY14MX064Q2B
Text: PRELIMINARY CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B 64-Kbit 8 K x 8 SPI nvSRAM 64-Kbit (8 K × 8) SPI nvSRAM Features • ■ ■ 64-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 8 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated
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CY14MB064Q1B/CY14MB064Q2B
CY14ME064Q1B/CY14ME064Q2B
64-Kbit
64-Kbit
CY14MX064Q1B)
CY14MB064Q1B/CY14MB064Q2B:
CY14ME064Q1B/CY14ME064Q2B:
cy14mb064
CY14MX064Q2B
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