kf 8715
Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
Text: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while
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HFA3101
HFA3101
10GHz)
10GHz
kf 8715
900mhz frequency generator
Ic 9430
UPA101
transistors equivalent 9012
5GHz band pass filter
500E
H3101B
HFA3101B
HFA3101B96
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HFA3101
Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair
Text: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while
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HFA3101
HFA3101
10GHz)
10GHz
9700E
fiber optic FM Modulator
gilbert cell sum
8906 ic
FM Modulator 2GHz
500E
H3101B
HFA3101B
gilbert cell differential pair
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northrop
Abstract: NGC3575 NGC3573 NGC3574 SOI 1998 Switch MIL-STD-883A Northrop Grumman 357498 soi switches
Text: 3UHOLPLQDU\ NGC3573 / NGC3574 / NGC3575 Radiation Hardened CMOS Analog Switches Northrop Grumman Corporation April 1998 Features NGC3573 D3 NC • CMOS analog switching allows rail to rail operation and low switch impedance NC • 40 V maximum operating voltage Nominal: ±15V
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NGC3573
NGC3574
NGC3575
NGC3573
northrop
NGC3575
SOI 1998 Switch
MIL-STD-883A
Northrop Grumman
357498
soi switches
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Untitled
Abstract: No abstract text available
Text: HIGH PERFORMANCE SOI/Cu SRAMs AND MEMORIES IN MICROPROCESSORS INVITED R. V. Joshi, S. Kang*, C. T. Chuang, G. Shahidi IBM Research Division, T. J. Watson Research Center, Yorktown Heights,NY 10598 * Aavid Thermalloy LLC, Concord, NH 03301 ([email protected], 914-945-1118)
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Modeling of SOI FET for RF Switch Applications
Abstract: No abstract text available
Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is
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12-stacked
12stacked
Modeling of SOI FET for RF Switch Applications
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E3081
Abstract: HT2080 CINOX OSCILLATOR CMOS technology length 0.4um 12GE 88Au HT1104HZ HT2160 IC CD4066 quad bilateral switch HTMOS
Text: High Temperature Electronics for Sensor Interface and Data Acquisition Sensors Expo, October 7, 1998 Jay Goetz – Applications Engineer Honeywell SSEC 12001 St Hwy 55 Plymouth MN 55441 612 954-2520 [email protected] Introduction High Temperature designs need components rated to operate in the harsh environment in which they will be
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Report-1997,
E3081
HT2080
CINOX OSCILLATOR
CMOS technology length 0.4um
12GE
88Au
HT1104HZ
HT2160
IC CD4066 quad bilateral switch
HTMOS
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Choosing the Right RF Switches for Smart Mobile Device Applications
Abstract: No abstract text available
Text: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than
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Untitled
Abstract: No abstract text available
Text: RMO2D-2 Novel Silicon-on-Insulator SP5T Switch-LNA Front-end IC Enabling Concurrent Dual-band 256-QAM 802.11ac WLAN Radio Operations Chun-Wen Paul Huang, Joe Soricelli, Lui Lam, Mark Doherty, Phil Antognetti, and William Vaillancourt Skyworks Solutions, Inc., Andover, MA 01810, USA
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256-QAM
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SiS 6215
Abstract: 8025g sis7016 pci 6254 44PIN SiS7014
Text: SiS7014 Single Chip 100Base-TX/10Base-T Physical Layer Solution SiS7014 Single Chip 100Base-TX/10Base-T Physical Layer Solution Preliminary Revision 1.0 January 18,1998 Silicon Integrated Systems Corp. This specification is subject to change without notice.
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SiS7014
100Base-TX/10Base-T
100Base-TX/10Base-T
100Base-TX1
SiS 6215
8025g
sis7016
pci 6254
44PIN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FL7KM-12A HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 à • 10V DRIVE • V d s s . 600V rD S ON ( M A X ) . 1 .3D.
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FL7KM-12A
O-220FN
30ERATURE
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS16KMA-4A HIGH-SPEED SWITCHING USE FS16KMA-4A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 1 • 10V DRIVE • V d s s . .200V • rDS ON (M AX). . 0.25Í2
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FS16KMA-4A
FS16KMA-4A
O-22QFN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS12UMA-4A HIGH-SPEED SWITCHING USE FS12UMA-4A OUTLINE DRAWING Dimensions in mm X < ® Q ©© © GATE © DRAIN ® SOURCE © DRAIN • 10V • V d s s .2 0 0 V
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FS12UMA-4A
O-220
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • • • • • PBYR2045CTF, PBYR2045CTX series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance
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PBYR2045CTF,
PBYR2045CTX
PBYR2045CTF
OT186
OT186A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS20UMA-4A HIGH-SPEED SWITCHING USE FS20UMA-4A OUTLINE DRAWING Dimensions in mm X < Q ® © © ©G ATE © DRAIN ® SOURCE © DRAIN • 10V D R IV E • V d s s . . 2 0 0 V • rDS ON (M AX).
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FS20UMA-4A
O-220
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10KMA-4A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 TO-220FN APPLICATION Cs Sw itch for CRT D isplay m onitor, Sw itch mode power supply, etc. MAXIMUM RATINGS Symbol Tc = 2 5°C Ratings
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FS10KMA-4A
FS10KMA-4A
O-22QFN
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SOT186A package
Abstract: Tj-102
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • • • • • PBYR1545CTF, PBYR1545CTX series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance
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PBYR1545CTF,
PBYR1545CTX
PBYR1545CTF
OT186
OT186A
SOT186A package
Tj-102
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • • • • • PBYR2545CTF, PBYR2545CTX SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance
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PBYR2545CTF,
PBYR2545CTX
PBYR2545CTF
OT186
PBYR2545CTX
OT186A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET F L 1 2 K M -1 2 A HIGH-SPEED SWITCHING USE FL12KM -12A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 • 10V DRIVE . 600V • V d s s • rD S O N ( M A X ) .
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FL12KM
O-220FN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS16UMA-4A HIGH-SPEED SWITCHING USE FS16UMA-4A OUTLINE DRAWING Dimensions in mm X < ® Q ©© ©G ATE © D R A IN ® SOURCE © D R A IN • 10V • V d s s .2 0 0 V
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FS16UMA-4A
O-220
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET F L 1 0 K M -1 2 A HIGH-SPEED SWITCHING USE FL10KM -12A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 600V
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FL10KM
O-220FN
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS20KMA-4A HIGH-SPEED SWITCHING USE FS20KMA-4A OUTLINE DRAWING D im e n s io n s in m m 10 ± 0 .3 • 10V • V d s s . 2 0 0 V •
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FS20KMA-4A
O-220FN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS12KMA-4A HIGH-SPEED SWITCHING USE FS12KMA-4A OUTLINE DRAWING D im ensions in mm 10 ±0.3 2.8 ±0.2 4 • 10V DRIVE • V . .200V • rDS ON (M A X ). .0.40Í2
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FS12KMA-4A
O-220FN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 • 10V DRIVE . 300V • V • rDS ON ( M A X ) .
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FL16KM-6A
O-220FN
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TLP751
Abstract: E67349 TLP750 VDE0884
Text: TO SHIBA TLP751 TOSHIBA PHOTOCOUPLER G a A M s IRED +PHOTO IC TLP751 DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING PO W ER SUPPLY FEEDBACK CONTROL ANALOG SIGNAL ISOLATION The TOSHIBA TLP751 Consists of GaA£As high-output light
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TLP751
TLP751
TLP750
E67349
VDE0884
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