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    SMD TRANSISTOR ZL Search Results

    SMD TRANSISTOR ZL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR ZL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 129 transistor

    Abstract: BLU86 SMD ic catalogue
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU86 UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile


    Original     		PDF BLU86 OT223 c 129 transistor BLU86 SMD ic catalogue

    BLT50

    Abstract: philips Trimmers 2222 series MEA218 MEA223 RF Transistor smd transistor zl
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification File under Discrete Semiconductors, SC08b April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures


    Original     		PDF BLT50 SC08b OT223 BLT50 philips Trimmers 2222 series MEA218 MEA223 RF Transistor smd transistor zl

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA


    Original     		PDF BLT50 OT223

    BLT50

    Abstract: ptfe trimmer philips 100 pf film dielectric trimmer BLT50,115
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA


    Original     		PDF BLT50 OT223 OT223 BLT50 771-BLT50115 ptfe trimmer philips 100 pf film dielectric trimmer BLT50,115

    L5 smd transistor

    Abstract: BLU86 c 129 transistor L6 smd transistor SMD ic catalogue MRA235 transistor handbook MRA236
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU86 UHF power transistor Product specification File under Discrete Semiconductors, SC08b September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for


    Original     		PDF BLU86 SC08b L5 smd transistor BLU86 c 129 transistor L6 smd transistor SMD ic catalogue MRA235 transistor handbook MRA236

    smd 809 x transistor

    Abstract: blt50 MEA218 philips Trimmer 60 pf L6 TRANSISTOR philips 2222 trimmer
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA


    Original     		PDF BLT50 OT223 smd 809 x transistor blt50 MEA218 philips Trimmer 60 pf L6 TRANSISTOR philips 2222 trimmer

    SMD TRANSISTOR L6

    Abstract: BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC08b 1996 May 02 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation


    Original     		PDF BLT80 SC08b OT223 OT223 MAM043 SMD TRANSISTOR L6 BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3

    BLU56

    Abstract: 35XL 809 npn smd 809 x transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU56 UHF power transistor Product specification January 1991 Philips Components Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures


    Original     		PDF BLU56 OT223 BLU56 35XL 809 npn smd 809 x transistor

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


    Original     		PDF BLT80 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


    Original     		PDF BLT81 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12

    BLT81

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC08b 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation


    Original     		PDF BLT81 SC08b OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12 BLT81

    358 SMD transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


    Original     		PDF BLT80 BLT80 OT223 MAM043 cir2724825 SCDS48 127061/1200/02/pp12 771-BLT80-T/R 358 SMD transistor

    4894

    Abstract: SMD ic catalogue BLT80 KM10 4312 020 36640
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


    Original     		PDF BLT80 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12 4894 SMD ic catalogue BLT80 KM10 4312 020 36640

    2222 730

    Abstract: BLT81
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


    Original     		PDF BLT81 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12 2222 730 BLT81

    Transistor B 1566

    Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
    Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application


    Original     		PDF DRF1402F OT-89 DRF1402F OT-89 465MHz 100nF Transistor B 1566 ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734

    SC74 marking 345

    Abstract: BC847DS TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC 45V100
    Text: BC847DS 45 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 — 25 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a small SOT457 SC-74 Surface-Mounted Device (SMD) plastic package.


    Original     		PDF BC847DS OT457 SC-74) AEC-Q101 BC847DS SC74 marking 345 TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC 45V100

    marking s20 SMD Transistor

    Abstract: sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power
    Text: 62 7  & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.


    Original     		PDF BFU730LX OT883C JESD625-A marking s20 SMD Transistor sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power

    smd transistor zl

    Abstract: rf transistor mar 8 DRF1401 THN5601B
    Text: THN5601B NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5601B THN5601B OT-223 900MHz Mar-22-2005 100nF 100pF smd transistor zl rf transistor mar 8 DRF1401

    16-2-472

    Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
    Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501

    XS 630 B

    Abstract: ic smd a 1712 THN5602F NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566
    Text: THN5602F SOT-89 NPN SiGe RF POWER TRANSISTOR The THN5602F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor 4 encapsulated in a plastic SOT-89 SMD package. The THN5602F can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5602F OT-89 THN5602F OT-89 465MHz 100nF XS 630 B ic smd a 1712 NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566

    smd transistor zk

    Abstract: 2SB1114 hFE CLASSIFICATION Marking
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1114 Features World standard miniature package. High DC current gain hFE=135 to 600. Low VCE sat : VCE(sat)=-0.3V at 1.5A Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage


    Original     		PDF 2SB1114 smd transistor zk 2SB1114 hFE CLASSIFICATION Marking

    BFS17

    Abstract: BFS17R BFS17W BFS17 E1
    Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 BFS17 E1

    BFS17

    Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 D-74025 bfs17 Vishay 702 TRANSISTOR sot-23 85038

    Untitled

    Abstract: No abstract text available
    Text: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA


    OCR Scan     		PDF b53T31 BLT80