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    SMD TRANSISTOR MARKING CODE 335 Search Results

    SMD TRANSISTOR MARKING CODE 335 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR MARKING CODE 335 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MCT5211 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection FEATURES • Saturation CTR - MCT5211, > 100 % at IF = 1.6 mA A 1 6 B C 2 5 C • High isolation voltage, 5300 VRMS 4 E • Compliant to RoHS Directive 2002/95/EC and in


    Original     		PDF MCT5211 i179004-7 MCT5211, 2002/95/EC 2002/96/EC UL1577, E52744 i179004-3 MCT5211 11-Mar-11

    MOSFET TRANSISTOR SMD MARKING CODE nh

    Abstract: No abstract text available
    Text: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV160UP O-236AB) MOSFET TRANSISTOR SMD MARKING CODE nh

    Untitled

    Abstract: No abstract text available
    Text: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS5612PA OT1061 PBSS4612PA.

    Untitled

    Abstract: No abstract text available
    Text: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4612PA OT1061 PBSS5612PA.

    smd transistor marking A6

    Abstract: TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE
    Text: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4620PA OT1061 PBSS5620PA. smd transistor marking A6 TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE

    smd code A9 3 pin transistor

    Abstract: smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA
    Text: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS5612PA OT1061 PBSS4612PA. smd code A9 3 pin transistor smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA

    Untitled

    Abstract: No abstract text available
    Text: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4620PA OT1061 PBSS5620PA.

    smd transistor marking A5

    Abstract: TRANSISTOR REPLACEMENT table for transistor PBSS4612PA
    Text: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4612PA OT1061 PBSS5612PA. smd transistor marking A5 TRANSISTOR REPLACEMENT table for transistor PBSS4612PA

    SMD transistor Marking 1x

    Abstract: No abstract text available
    Text: PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)


    Original     		PDF PMFPB8032XP DFN2020-6 OT1118) SMD transistor Marking 1x

    TRANSISTOR SMD MARKING CODE w2

    Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
    Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright


    Original     		PDF

    SMD TRANSISTOR MARKING 5H

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 PBSS301NX PBSS301PX 6 pin TRANSISTOR SMD CODE 5H
    Text: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 01 — 21 August 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS301PX SC-62/TO-243) PBSS301NX. PBSS301PX SMD TRANSISTOR MARKING 5H TRANSISTOR SMD CODE PACKAGE SOT89 PBSS301NX 6 pin TRANSISTOR SMD CODE 5H

    PBSS301NZ

    Abstract: PBSS301PZ SC-73 TRANSISTOR SMD MARKING CODE 57
    Text: PBSS301PZ 12 V, 5.7 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS301PZ OT223 SC-73) PBSS301NZ. PBSS301PZ PBSS301NZ SC-73 TRANSISTOR SMD MARKING CODE 57

    PBSS301NZ

    Abstract: PBSS301PZ SC-73
    Text: PBSS301PZ 12 V, 5.7 A PNP low VCEsat BISS transistor Rev. 01 — 7 September 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS301PZ OT223 SC-73) PBSS301NZ. PBSS301PZ PBSS301NZ SC-73

    Untitled

    Abstract: No abstract text available
    Text: PBSS301PZ 12 V, 5.7 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS301PZ OT223 SC-73) PBSS301NZ. PBSS301PZ

    TRANSISTOR SMD MARKING CODE 352

    Abstract: PBSS304ND PBSS304PD mosfet SMD MARKING CODE 352
    Text: PBSS304ND 80 V, 3 A NPN low VCEsat BISS transistor Rev. 01 — 7 April 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS304ND OT457 SC-74) PBSS304PD. PBSS304ND TRANSISTOR SMD MARKING CODE 352 PBSS304PD mosfet SMD MARKING CODE 352

    TRANSISTOR SMD MARKING CODE 352

    Abstract: PBSS304ND PBSS304PD
    Text: PBSS304ND 80 V, 3 A NPN low VCEsat BISS transistor Rev. 02 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS304ND OT457 SC-74) PBSS304PD. PBSS304ND TRANSISTOR SMD MARKING CODE 352 PBSS304PD

    sot89 footprint

    Abstract: PBSS301NX PBSS301PX SMD TRANSISTOR MARKING 5H
    Text: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS301PX SC-62/TO-243) PBSS301NX. PBSS301PX sot89 footprint PBSS301NX SMD TRANSISTOR MARKING 5H

    Untitled

    Abstract: No abstract text available
    Text: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS301PX SC-62/TO-243) PBSS301NX. PBSS301PX

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: No abstract text available
    Text: CS3341, CS3351, CS387 Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3−phase alternators. It drives an external power Darlington for control of the alternator


    Original     		PDF CS3341, CS3351, CS387 CS3341/3351/387 CS3341 CS3351 CS387 CS3361. TRANSISTOR SMD MARKING CODE 1 KW

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: smd TRANSISTOR code marking wL TRANSISTOR SMD MARKING CODE MF fet alternator regulator circuit CS387 CS3341 CS3341YD14 CS3341YD14G CS3341YDR14 CS3351
    Text: CS3341, CS3351, CS387 Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3−phase alternators. It drives an external power Darlington for control of the alternator


    Original     		PDF CS3341, CS3351, CS387 CS3341/3351/387 CS3341 CS3351 SOIC-14 CS387 CS3361. TRANSISTOR SMD MARKING CODE 1 KW smd TRANSISTOR code marking wL TRANSISTOR SMD MARKING CODE MF fet alternator regulator circuit CS3341YD14 CS3341YD14G CS3341YDR14

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: transistor marking codes K 044 PMFPB6532 MOSFET TRANSISTOR SMD 033 marking code 1b
    Text: PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 1 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)


    Original     		PDF PMFPB6532UP OT1118 MOSFET TRANSISTOR SMD MARKING CODE A1 transistor marking codes K 044 PMFPB6532 MOSFET TRANSISTOR SMD 033 marking code 1b

    SMD TRANSISTOR MARKING 1B

    Abstract: No abstract text available
    Text: ' 1   PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 2 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)


    Original     		PDF PMFPB6532UP DFN2020-6 OT1118) SMD TRANSISTOR MARKING 1B

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28