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    SMD TRANSISTOR G12 Search Results

    SMD TRANSISTOR G12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR G12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor marking G12

    Abstract: SMD Transistor g12 smd diode marking G12 G12 SMD SOT23 smd marking g12 marking g12 2SK1399
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1399 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 impedance 0.55 Not necessary to consider driving current because of it is high input +0.1 1.3-0.1 +0.1 2.4-0.1 Can be driven by a 3.0-V power source 0.4


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    PDF 2SK1399 OT-23 smd transistor marking G12 SMD Transistor g12 smd diode marking G12 G12 SMD SOT23 smd marking g12 marking g12 2SK1399

    L6562D

    Abstract: Electronic ignitors for HID lamp circuits Diac st 083 schematic diagram Electronic Ballast HID circuit diagram electronic choke for tube light schematic hid ballast 35w ELECTRONIC BALLAST 150 W HID DIAGRAM melf ZENER diode COLOR CODE schematic hid lamp ballast schematic hid sodium lamp ballast
    Text: AN2952 Application note 35 W electronic ballast for HID lamps Introduction Low-power metal halide lamps are becoming popular as lighting sources in indoor environments like shopping centers or malls, serving as alternatives to more traditional halogen lamps, thanks to their intrinsic higher efficiency, longer lifetime and optimal color


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    PDF AN2952 Hz-100 z-400 L6562D Electronic ignitors for HID lamp circuits Diac st 083 schematic diagram Electronic Ballast HID circuit diagram electronic choke for tube light schematic hid ballast 35w ELECTRONIC BALLAST 150 W HID DIAGRAM melf ZENER diode COLOR CODE schematic hid lamp ballast schematic hid sodium lamp ballast

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    SMD Transistor Y12

    Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
    Text: Technical Information Type Designation in Accordance with Pro Electron 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.


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    UJT APPLICATION

    Abstract: SMD Transistor Y12 "tunnel diode" oscillator SMD transistor y11 Y22 transistor smd SMD Transistor g22 y22c NF50 y-parameter Technical Explanations power transistor
    Text: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.


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    germanium diode smd

    Abstract: "tunnel diode" oscillator SMD Transistor Y12 "Step Recovery Diode" NF50 Z2E diode Technical Explanations power transistor tunnel diode diode varactor B11 g21 SMD Transistor
    Text: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.


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    toshiba amplified subwoofer

    Abstract: No abstract text available
    Text: TA5704EVM 4-Channel Digital Audio Power Amplifier with Hardware Control User's Guide Literature Number: SLOU224 April 2008 2 SLOU224 – April 2008 Submit Documentation Feedback Contents Preface . 5


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    PDF TA5704EVM SLOU224 TAS5704EVM toshiba amplified subwoofer

    transistor smd bc rn

    Abstract: SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 SMD transistor BC RN transistor ic equivalent book smd y12 GaAs tunnel diode Common collector configuration basic applications of ujt
    Text: GaAs Components Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.


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    smd code A9 3 pin transistor

    Abstract: smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9
    Text: High Speed Converter Evaluation Platform HSC-ADC-EVALC FEATURES PRODUCT HIGHLIGHTS Xilinx Virtex-4 FPGA-based buffer memory board Used for capturing digital data from high speed ADC evaluation boards to simplify evaluation 64 kB FIFO depth Parallel input at 644 MSPS SDR and 800 MSPS DDR


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    PDF ADP3339AKCZ-3 SKHHAKA010 CBSB-14-01 DPS050300U-P5P-TK ADR512ART ERJ-2GEJ622X ERJ-2GE0R00X ERJ-2GEJ133X ERJ-2GEJ102X ECJ-0EB0J224K smd code A9 3 pin transistor smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9

    e17 ferrite

    Abstract: MT47H64M16HR micron DDR2 pcb layout MICRON POWER RESISTOR 2w 6,8k 1.25mm Pitch smd dip switch MT47H64M16HR-3 IT UM10155 Micron MT47H64M16HR-3 IT MT47H64M16HR-3 smd 3528 led strip MT47H64M16HR
    Text: STMicroelectronics EVALSPEAr320CPU SPEAr320 CPU evaluation board UM1015 User manual Doc ID 18124 Rev 1 October 2010 www.st.com BLANK UM1015 User manual EVALSPEAr320CPU SPEAr320 CPU evaluation board Introduction This document applies to revision 2.0 SPEAr320 CPU evaluation boards.


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    PDF EVALSPEAr320CPU SPEAr320 UM1015 e17 ferrite MT47H64M16HR micron DDR2 pcb layout MICRON POWER RESISTOR 2w 6,8k 1.25mm Pitch smd dip switch MT47H64M16HR-3 IT UM10155 Micron MT47H64M16HR-3 IT MT47H64M16HR-3 smd 3528 led strip MT47H64M16HR

    transistor smd d9d

    Abstract: smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A
    Text: DEMO MANUAL DC2064A LTC3300-1/LTC6803-2 Bidirectional Cell Balancer DESCRIPTION Demonstration Circuit DC2064A is a bidirectional cell balancer using two LTC 3300-1 ICs to achieve active cell balancing of up to 12 Li-Ion batteries. The board uses the LTC6803-2 multi-cell addressable battery stack monitor to


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    PDF DC2064A LTC3300-1/LTC6803-2 DC2064A LTC6803-2 LTC3300-1 DC2064A. LTC6803â DC590B transistor smd d9d smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A

    A434 RF MODULE

    Abstract: JESD31 TRANSISTOR SMD MARKING CODE A45 NCSL Z540.3 MIL-I-46058 part marking b36 smd diode tm-1017 B568 solar water pumping machine control schematic JEDEC JESD31
    Text: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VAC 20 April, 2010 MEMORANDUM FOR MILITARY/INDUSTRY DISTRIBUTION SUBJECT: Initial Draft of MIL-PRF-38535 Revision J: Project Number 5962-2010-006


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    PDF MIL-PRF-38535 MIL-PRF-38535J RD-650) A434 RF MODULE JESD31 TRANSISTOR SMD MARKING CODE A45 NCSL Z540.3 MIL-I-46058 part marking b36 smd diode tm-1017 B568 solar water pumping machine control schematic JEDEC JESD31

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


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    PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    88E1119R

    Abstract: 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide August 2012 Revision: EB62_01.5  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


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    PDF 25MHz HDR40 ATS120SM-1 HC-49/US-SM 25MHZ 1K-0402SMT 20K-0402SMT 100PF-0402SMT 3UF-10V-0805SMT HC49US-25 88E1119R 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13

    npn transistor smd w19

    Abstract: LFE3-35E-FN484CES 88e1119r 88E1119 AA19 smd diode smd transistor w17 pDS4102-DL diode C238 88E111 FTD2232
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide July 2013 Revision: EB62_01.6  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


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    PDF 25MHZ HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X npn transistor smd w19 LFE3-35E-FN484CES 88e1119r 88E1119 AA19 smd diode smd transistor w17 pDS4102-DL diode C238 88E111 FTD2232

    Untitled

    Abstract: No abstract text available
    Text: SPIO-4 Precision Signal-Path Controller Board Users' Guide December 2010 Table of Contents 1.0 SPIO-4 System Overview . 3 1.0 SPIO-4 System Overview . 3


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    LTE antenna

    Abstract: g25 SMD Transistor AVAGO PA LTE SMD Transistor g24
    Text: ACPM-5002-TR1 Multimode PA - UMTS Band2 and CDMA PCS 1850-1910MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5002-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band2 and CDMA PCS band.


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    PDF ACPM-5002-TR1 1850-1910MHz) ACPM-5002-TR1 10-pin 50ohm AV02-2477EN LTE antenna g25 SMD Transistor AVAGO PA LTE SMD Transistor g24

    ACPM-5002

    Abstract: ACPM-5002-TR1 LTE chipsets gps glonass AVAGO PA LTE SMD Transistor g15 SMD Transistor g24
    Text: ACPM-5002-TR1 Multimode PA - UMTS Band2, LTE Band25 and CDMA PCS 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5002-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band2 1850-1910MHz


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    PDF ACPM-5002-TR1 Band25 ACPM-5002-TR1 10-pin 1850-1910MHz) 1850-1915MHz) 50ohm AV02-2477EN ACPM-5002 LTE chipsets gps glonass AVAGO PA LTE SMD Transistor g15 SMD Transistor g24

    286DB

    Abstract: AVAGO PA LTE ACPM5
    Text: ACPM-5002-TR1 Multimode PA - UMTS Band2 and CDMA PCS 1850-1910MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5002-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band2 and CDMA PCS band.


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    PDF ACPM-5002-TR1 1850-1910MHz) ACPM-5002-TR1 10-pin 50ohm AV02-2477EN 286DB AVAGO PA LTE ACPM5

    smd transistor rc1

    Abstract: SMD MARKING CODE g25 SMD Transistor g25 ACPM5 AVAGO PA LTE
    Text: ACPM-5002-TR1 Multimode PA - UMTS Band2 and CDMA PCS 1850-1915MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5002-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band2 (1850-1910MHz)


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    PDF ACPM-5002-TR1 1850-1915MHz) ACPM-5002-TR1 10-pin 1850-1910MHz) 50ohm AV02-2477EN smd transistor rc1 SMD MARKING CODE g25 SMD Transistor g25 ACPM5 AVAGO PA LTE

    SMD Transistor g24

    Abstract: No abstract text available
    Text: ACPM-5002-TR1 Multimode PA - UMTS Band2 and CDMA PCS 1850-1910MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5002-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band2 and CDMA PCS band.


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    PDF ACPM-5002-TR1 1850-1910MHz) ACPM-5002-TR1 10-pin 50ohm AV02-2477EN SMD Transistor g24

    Alc201A

    Abstract: HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN
    Text: Intel 852GME Interactive Client Reference Design User’s Guide October 2003 Order Number: 274000-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


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    PDF 852GME Alc201A HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN

    S7E SMD TRANSISTOR

    Abstract: No abstract text available
    Text: DUALITY -TECHNOLOGIES CORP 27E D Bl QUALITY TECHNOLOGIES • 74bfciä51 Q0G3S4S 7 PHOTOTRANSISTOR OPTOCOUPLER T—41—83 MCT275 DESCRIPTION PACKAGE DIMENSIONS The MCT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    PDF 74bfcià MCT275 MCT275 MCT9001 S7E SMD TRANSISTOR

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn