Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SMD DIODE MARKING JJ Search Results

    SMD DIODE MARKING JJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE MARKING JJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Small Signal Switching Diode BAS16T/BAV70T/BAW56T/BAV99T List List. 1 Package outline. 2


    Original
    PDF BAS16T/BAV70T/BAW56T/BAV99T MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs.

    smd diode sod-323 marking code a2

    Abstract: smd diode A2 smd diode a6 JJ SMD diode smd diode marking JJ smd diode code a6 diode SMD MARKING CODE A6 DIODE SMD A6 A2 diode smd smd diode marking a6
    Text: Two Terminals SMD Switching Diodes 1N4148WS/1N4448WS/BAV16WS Two Terminals SMD Switching Diodes Features • • • • Fast Switching Speed High Conductance Electrically Identical to Standard JEDEC RoHS compliant SOD-323 Mechanical Data SOD-323, Plastic Case


    Original
    PDF 1N4148WS/1N4448WS/BAV16WS OD-323 OD-323, MIL-STD-202G, 1N4148WS BAV16WS 1N4448WS smd diode sod-323 marking code a2 smd diode A2 smd diode a6 JJ SMD diode smd diode marking JJ smd diode code a6 diode SMD MARKING CODE A6 DIODE SMD A6 A2 diode smd smd diode marking a6

    smd marking JD

    Abstract: JJ SMD diode smd diode JD smd diode je smd transistor JE smd diode bas16t smd diode marking JJ smd marking JE smd diode A2 BAV70T
    Text: Diodes SMD Type Switching Diode BAS16T;BAW56T BAV70T;BAV99T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 +0.01 0.1-0.01 +0.05 0.8-0.05 1 +0.15 1.6-0.15 2 0.55 Features 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter


    Original
    PDF BAS16T BAW56T BAV70T BAV99T OT-523 BAS16T BAV70T smd marking JD JJ SMD diode smd diode JD smd diode je smd transistor JE smd diode bas16t smd diode marking JJ smd marking JE smd diode A2

    SMD M1B diode

    Abstract: SMD M1B sr smd diode smd marking KM m1b marking smd diode A4 J532 M3FL20U smd diode sr SMD marking "SR"
    Text: Super Fast Recovery Diode mtm OUTLINE Single Diode M3FL20U U nit-m m W eight 0.072g Typ Package : M2F Jj V—Y-?—? 200V 3A Feature • /J v P S M D • Small SMD • ß y -rx • trr= 3 5 n s • Low Noise G> \4 • trr=35ns • Low V f=0.95V • <SV f=0.95V


    OCR Scan
    PDF M3FL20U i50Hz SMD M1B diode SMD M1B sr smd diode smd marking KM m1b marking smd diode A4 J532 M3FL20U smd diode sr SMD marking "SR"

    10LC20U

    Abstract: 10LC20 spacification DIODE smd marking MO 10LC2 smd diode marking JC DF10LC20U
    Text: Super Fast Recovery Diode Twin Diode m tm m o u tlin e DF1 0 LC 2 0 U 20 0V 10A Feature • SMD • Low Noise • trr-35ns • SMD • e y -rx • trr-3 5 n s Main Use • D C /D C D y / K - Ï • m m , OA.RBE • a e .F A • • • • Switching Regulator


    OCR Scan
    PDF DF10LC20U trr-35ns STO-220 10LC20U J532-1) 10LC20 spacification DIODE smd marking MO 10LC2 smd diode marking JC DF10LC20U

    s4c diode

    Abstract: DIODE SMD MARKING 5C smd ic marking SH
    Text: Super Fast Recovery Diode Single Diode mfm OUTLINE Package : STO-220 DF20L60 PyhfLig- ffl Unit-mm Weight 1.5g (Typ) 10.2 600V 20A Feature • SMD 1ralîEE • SMD •trr=70ns • trr=70ns • High Voltage 4.7 Main Use - PFC • PFC(Power Factor Correction)


    OCR Scan
    PDF STO-220 DF20L60 s4c diode DIODE SMD MARKING 5C smd ic marking SH

    Untitled

    Abstract: No abstract text available
    Text: Single Diode M1FH3 Schottky Barrier Diode mtmm o u t l in e 30V 1.5A io V - P v - ? C ath o d e m ark CD Feature I Small SMD Super-Low V f= 0 .3 6 V •g e < g V F = 0 .3 6 V Unit-mm Weight 0.027g Typ Package : M1F H92 1 , T y p e No. Main Use • D C /D C


    OCR Scan
    PDF

    J532

    Abstract: WTT device marking marking BTJ
    Text: Schottky Barrier Diode mtmm Single Diode M1FJ4 40V1.5A o u t l in e io V - P v - ? Cathode mark CD Feature l • /J v g y S M D - Small SMD > Tj=150°C 1Tj=150°C 1Low lR=0.05mA 1Resistance for thermal run-away • < S lR = 0 .0 5 m A :u ic < n Unit-mm Weight 0.027g Typ


    OCR Scan
    PDF 150lC 50IIz J532 WTT device marking marking BTJ

    marking 33a on semiconductor

    Abstract: 2TWR smd diode code marking 33A SMD MARKING CODE tvw marking code vu
    Text: Schottky Barrier Diode mtmm o u t l i n e Single Diode M1FS4 U nit I mm Package : M1F W eight 0 .0 2 7 tf T y p 40 V 1.33A &y—Kv—? Cathode mark Feature • /JvgaSMD • Small SMD • V f=0.55V • Low V f=0.55V • P R R S M ^ n '^ > '> x (* !iE • P rrsm Rating


    OCR Scan
    PDF J532-1 marking 33a on semiconductor 2TWR smd diode code marking 33A SMD MARKING CODE tvw marking code vu

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Single Diode D3FP3 U nit I mm Package : 2F Weight 0.16tf Typ ay— K v -y 30V 3A ' Cathode mark Feature • î • £«» • Small SMD • Ultra-Low Vf=0.4V S V f = 0 .4 V Main Use • n y x u - im s it • D C t U ^ lO R f f l


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1414A International IO R Rectifier IR L M S 6 7 0 2 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channei MOSFET . * «1 : n V q ss J f , * *| O'— JJ — G ~ iJ L-f~ s = -20V ^ D S (o n ) =


    OCR Scan
    PDF

    smd code A1t

    Abstract: A1T SMD diode A1t smd 10j smd diode 134 B 360 SMD smd marking code KN PMBD2835 PMBD2836 marking H01 a1t MARKING
    Text: Philips Semiconductors Product specification High-speed double diodes FEATURES PMBD2835; PMBD2836 MARKING • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 35 V and 75 V respectively PINNING MARKING CODE


    OCR Scan
    PDF PMBD2835; PMBD2836 PMD2835, PMD2836 PMBD2835 PMBD2836 711DflEb smd code A1t A1T SMD diode A1t smd 10j smd diode 134 B 360 SMD smd marking code KN marking H01 a1t MARKING

    Untitled

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode Single Diode OUTLINE D2FK60 Unit* mm Weight O.lötf Typ Package : 2F a y -K v -» / Cattaxlr mark 600V 1.5A Feature !> — M - •HJBEE • Small SMD • High Voltage • trr= 7 5 n s • trr-7 5 n s • <£V f=1.3V • Low Vf=1.3V


    OCR Scan
    PDF D2FK60 J532-1)

    smd diode 27c

    Abstract: marking smd NU smd diode marking sim kb MARKING SMD Diode marking 27C SMD MARKING DIODE VU smd marking nu smd diode marking NN smd marking 2x DG1M3
    Text: Schottky Barrier Diode Single Diode m tm m DG1M3 o u t lin e Package : G 1 F Unu:mm Weight O.O llii Typ 30 V 1A in 3 Feature • • • • • lâiW§y=0.8mm • ß V f = 0.46 V • 1ftlR= 0.05mA i |C24 Ultra-small SMD Ultla-thin PKG=0.8mm Low Vf -0.46V


    OCR Scan
    PDF J532-1) smd diode 27c marking smd NU smd diode marking sim kb MARKING SMD Diode marking 27C SMD MARKING DIODE VU smd marking nu smd diode marking NN smd marking 2x DG1M3

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS GaAs IRL 80A IRL 81A GaAIAs Infrared Emitter Dimensions in inches mm .650(16.51) .630 (16.00) r t .06(1.52) 100 (2.54) Anode APPLICATIONS • Beam interruption usage • Light barriers DESCRIPTION .100 (2.54) .080 (2.03) 092 (2.34) 082 (2.08) Cathode


    OCR Scan
    PDF IRL80A: IRL81A: 18-pln fl535t

    smd diode marking zf

    Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
    Text: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •


    OCR Scan
    PDF DF10SC4M 11-PKG STO-220 J532-1) smd diode marking zf DF10SC4M smd diode marking c MTKM Diode 1_b SMD

    JJ SMD diode

    Abstract: diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W
    Text: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package


    OCR Scan
    PDF 4-02W Q62702-A1215 SCD-80 100MHz JJ SMD diode diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W

    SMD TRANSISTOR MARKING xf

    Abstract: TRANSISTOR SMD MARKING CODE QO SMD Transistor Marking Code Nt smd transistor marking ip h 6NI37 chip die hp transistor smd transistor xf HCPL-6650 883B smd transistor marking A11
    Text: T £ 2 ñ HEW LETT* W SEM P A C K A R D Hermeticalfy Sealed, High Speed, High CMR, Logic Gate Optocouplers 6N134* 81028 HCPL-563X HCPL-663X Technical Data HCPL-665X 5962-90855 HCPL-560X *See matrix for available extensions. Features • Dual Marked w ith Device


    OCR Scan
    PDF 6N134* HCPL-563X HCPL-663X HCPL-665X HCPL-560X MIL-PRF-38534 QML-38534, 6NI37, HCPL-2601, HCPL2630/-31 SMD TRANSISTOR MARKING xf TRANSISTOR SMD MARKING CODE QO SMD Transistor Marking Code Nt smd transistor marking ip h 6NI37 chip die hp transistor smd transistor xf HCPL-6650 883B smd transistor marking A11

    smd transistor 1yc

    Abstract: smd tr 1yc smd marking ACH marking code yc SMD Transistor 8302401E marking code EA SMD Transistor 8302401EA A13j 6n140a
    Text: Wißt mLfïM Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data HEWLETT PACKARD 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix fo r available extensions. Features • D ual M arked w ith D ev ice


    OCR Scan
    PDF 6N140A* HCPL-675X HCPL-570X HCPL-177K HCPL-573X HCPL-673X IL-PRF-38534 L-38534, 5964-2063E 5966-2799E smd transistor 1yc smd tr 1yc smd marking ACH marking code yc SMD Transistor 8302401E marking code EA SMD Transistor 8302401EA A13j 6n140a

    IC MARKING NS-05

    Abstract: smd code Yj 33 5962-8851601LX ST 431c
    Text: AMD n REVISIONS LT R D A T E YR-H0-DA DESCRIPTION APPROVED A A d d e d b u r n - i n c o n d i t i o n C to 4 . 2 . a . l and 4 . 3 .2.b.l. D e v i c e ty p e s 03 an d 04 i n a c t i v e f o r n e w d esign. Not available from an approved source. E ditorial changes throughout.


    OCR Scan
    PDF AM29C923/BLA AM29C821A/BLA AM29C821A/6KA AM29C821A/B3A AM29C823A/BLA AM29C823A/BKA AM29C823A/BLA 29C821A/823A IC MARKING NS-05 smd code Yj 33 5962-8851601LX ST 431c

    SMD 100 6n cap

    Abstract: smd transistor marking 6n SMD TRANSISTOR MARKING 6C
    Text: Wißt H E W L E T T mLfïM P A C K A R D Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers 6N 134* 81028 HCPL-563X HCPL-663X Technical Data 5962-98001 HCPL-268K HCPL-665X 5962-90855 HCPL-560X :'See m atrix for available extensions. F eatu res


    OCR Scan
    PDF HCPL-563X HCPL-663X HCPL-268K HCPL-665X HCPL-560X MIL-PRF-38534 QML-38534, 6N137, HCPL-2601, HCPL2630/-31 SMD 100 6n cap smd transistor marking 6n SMD TRANSISTOR MARKING 6C

    Untitled

    Abstract: No abstract text available
    Text: BAT74 SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ ■ ■ ■ NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP EXTREMELY FAST SWITCHING SURFACE MOUNT DEVICE DESCRIPTION Two separate Schottky barrier diodes encapsu­


    OCR Scan
    PDF BAT74 OT-143

    SMD MARKING XL

    Abstract: No abstract text available
    Text: PD - 9.1380A International IOR Rectifier IRLL2705 HEXFET Power MOSFET • • • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance V dss = 55V


    OCR Scan
    PDF IRLL2705 OT-223 C-603 C-604 SMD MARKING XL

    c608 e diode

    Abstract: smd diode 46A C605 Q C605 B marking c606 c600h c608 A diode irll3303
    Text: PD - 9.1379A International M R Rectifier IRLL3303 HEXFET Power MOSFET • • • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance Vdss = 30V


    OCR Scan
    PDF IRLL3303 T-223 C-609 c608 e diode smd diode 46A C605 Q C605 B marking c606 c600h c608 A diode irll3303