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    SMD DIODE JC 68 Search Results

    SMD DIODE JC 68 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE JC 68 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STMicroelectronics smd marking code

    Abstract: st smd diode marking code
    Text: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Datasheet - production data Description Packaged in hermetic TO-254 or SMD.5, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other


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    PDF BYW81HR O-254 O-254 BYW81-200CFSY1 DocID17735 STMicroelectronics smd marking code st smd diode marking code

    Untitled

    Abstract: No abstract text available
    Text: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses


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    PDF STPS20100HR O-254 ESCC5000

    STMicroelectronics smd marking code

    Abstract: st smd diode marking code
    Text: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate


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    PDF STPS20100HR O-254 ESCC5000 STPS20100HR DocID16953 STMicroelectronics smd marking code st smd diode marking code

    st smd diode marking code

    Abstract: STPS20100S1 smd diode B3 STMicroelectronics smd DIODE marking code STPS20100AFSYHRB 5106 smd diode code B2 smd diode order marking code stmicroelectronics STPS20100HR STPS20100SHRB
    Text: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses


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    PDF STPS20100HR O-254 ESCC5000 st smd diode marking code STPS20100S1 smd diode B3 STMicroelectronics smd DIODE marking code STPS20100AFSYHRB 5106 smd diode code B2 smd diode order marking code stmicroelectronics STPS20100HR STPS20100SHRB

    ld smd transistor

    Abstract: 78 DIODE SMD KRF2805S 104A smd diode JC 68
    Text: Transistors IC SMD Type HEXFET Power MOSFET KRF2805S TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Advanced Process Technology Ultra Low On-Resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Repetitive Avalanche Allowed up to Tjmax


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    PDF KRF2805S O-263 11gate 22drain 33source ld smd transistor 78 DIODE SMD KRF2805S 104A smd diode JC 68

    400v p-channel mosfet

    Abstract: P-Channel mosfet 400v KQB4P40
    Text: Transistors IC SMD Type 400V P-Channel MOSFET KQB4P40 1 .2 7 -0+ 0.1.1 TO-263 Features 3.5A, -400V, RDS on = 3.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 @VGS = -10 V 5 .2 8 -0+ 0.2.2 100% avalanche tested Improved dv/dt capability 0.1max +0.1 1.27-0.1 Fast switching


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    PDF KQB4P40 O-263 -400V, 400v p-channel mosfet P-Channel mosfet 400v KQB4P40

    smd 1C

    Abstract: 1b smd transistor smd diode JC
    Text: IC IC SMD Type 60V N-Channel PowerTrenchTM MOSFET KDS5670 Features 10 A, 60 V. RDS ON = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability


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    PDF KDS5670 smd 1C 1b smd transistor smd diode JC

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK08G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC


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    PDF IDK08G65C5

    Untitled

    Abstract: No abstract text available
    Text: IC IC MOSFET SMD Type Product specification KDS5670 Features 10 A, 60 V. RDS ON = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability


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    PDF KDS5670

    a2232

    Abstract: smd 1C PF202 A-2232
    Text: IC IC SMD Type 30V P-Channel PowerTrench MOSFET KDS6685 Features -8.8 A, -30 V. RDS ON = 20m RDS(ON) = 35m @ VGS = -10 V @ VGS =-4.5V Low gate charge(17 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability


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    PDF KDS6685 a2232 smd 1C PF202 A-2232

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 0.127 max +0.28 1.50-0.1 +0.1


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    PDF KDD3680 O-252

    1b.1 smd transistor

    Abstract: smd transistor nc 61 1B 4 SMD 1b smd transistor smd diode JC 7 SMD Transistor nc KDD3680
    Text: Transistors IC SMD Type 100V N-Channel Power Trench MOSFET KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15


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    PDF KDD3680 O-252 1b.1 smd transistor smd transistor nc 61 1B 4 SMD 1b smd transistor smd diode JC 7 SMD Transistor nc KDD3680

    3phase MOSFET INVERTER

    Abstract: 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw
    Text: Motor Drive Solutions Integrated modules SPM • Discrete components • Online tools n Pmech = M • � = M • 2 • � • _ = √3 • U • I • cos (�) • � 60s _ min –1 Optimize your motor designs: less energy, cost and time.


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    PDF Power247TM, 3phase MOSFET INVERTER 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw

    diode SMD CODE sm 17

    Abstract: C67078-A5007-A2 E3045 GPT05155 C67078-A5007 smd rgs BTS100
    Text: Smart Highside Power Switch TEMPFET BTS 100 Features ● ● ● ● P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type VDS ID RDS on Package Ordering Code BTS 100


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    PDF O-220AB C67078-A5007-A2 E3045 E3045A GPT05155 C67078-A5007-A7 C67078-A5007-A12 diode SMD CODE sm 17 C67078-A5007-A2 E3045 GPT05155 C67078-A5007 smd rgs BTS100

    4606 MOSFET INVERTER

    Abstract: SMD MOSFET DRIVE DATASHEET 4606 mosfet cross reference inverter 4606 A12A 4606 inverter ic eltek flatpack LED DRIVER ana 618 uc3843 inverter circuit 4606 inverter KA3843
    Text: Shortform Catalog February 2001 http://www.micrel.com/ Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • +1 408 944-0800 • +1 408 944-0970 Micrel Shortform Catalog February 2001 2001 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any


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    C67078-A5007-A2

    Abstract: E3045 GPT05155 C67078-A5007 diode SMD CODE sm 17 C67078-A5007-A7 TEMPFET
    Text: TEMPFET BTS 100 Smart Highside Power Switch Features ● ● ● ● P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type VDS ID RDS on Package Ordering Code BTS 100


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    PDF O-220AB C67078-A5007-A2 C67078-A5007-A2 E3045 GPT05155 C67078-A5007 diode SMD CODE sm 17 C67078-A5007-A7 TEMPFET

    6 pin TRANSISTOR SMD CODE PA

    Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
    Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol


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    PDF BUZ22SMD q67042-s4139 DsJ14 6 pin TRANSISTOR SMD CODE PA BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD

    transistor smd MJ 145

    Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
    Text: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter


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    PDF q67042-s4131 np-60 transistor smd MJ 145 d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145

    A7 SMD TRANSISTOR

    Abstract: smd JH transistor smd diode a7 smd transistor A7 SMD a7 Transistor 6 pin TRANSISTOR SMD CODE 21 smd transistor js BUZ21 smd diode os smd transistor A7 s 50
    Text: Infineon technologies BUZ 21 SMD SIPMOS Power T ransistor • N channel • Enhancement mode tab • Avalanche-rated Pin 1 Pin 2 Pin 3 c? (/> D Type BUZ 21 SMD 100 V 1D R OS(on) 21 A 0.085 Í2 Package d 2p a k Ordering Code Q67042-S4132 Maximum Ratings


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    PDF BUZ21 Q67042-S4132 A7 SMD TRANSISTOR smd JH transistor smd diode a7 smd transistor A7 SMD a7 Transistor 6 pin TRANSISTOR SMD CODE 21 smd transistor js smd diode os smd transistor A7 s 50

    1FW smd

    Abstract: SMD 1FW 1FW 55 1FW 14 smd 1FW 75 1FW 85 1FW 29 BTS100 1FW 60 smd code 12.00 Jn
    Text: SIEMENS Smart Highside Power Switch TEMPFET Features • • • • P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Type Vos h BTS 100 -5 0 V -8 A ^DS<on 0.3 £2 Package Ordering Code


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    PDF O-220AB C67078-A5007-A2 E3045 E3045A C67078-A5007-A7 C67078-A5007-A12 1FW smd SMD 1FW 1FW 55 1FW 14 smd 1FW 75 1FW 85 1FW 29 BTS100 1FW 60 smd code 12.00 Jn

    Drive circuit for IGBT using IR2130

    Abstract: Schematic Drive circuit for IGBT using IR2130 SMD LD3 smd diode h15 AN-985 two IR2130 12 output single phase IR2130 MP816 ac motor speed control circuit ir2130 h1n1
    Text: International ion R e c tifie r D e sig n T ips DT 93-6B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 MINIATURIZATION OF THE POWER ELECTRONICS FOR MOTOR DRIVES By G erry Limjuco & Dana Wilhelm


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    PDF T0-220 IRGBC30KD2-S) Drive circuit for IGBT using IR2130 Schematic Drive circuit for IGBT using IR2130 SMD LD3 smd diode h15 AN-985 two IR2130 12 output single phase IR2130 MP816 ac motor speed control circuit ir2130 h1n1

    A4t 29 smd

    Abstract: smd a4t
    Text: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 Vds f lDS on 200 V 9.5 A 0.4 n • Package Ordering Code TO-220 AB C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current


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    PDF O-220 C67078-S1310-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T A4t 29 smd smd a4t

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS TEMPFET BTS115A Features • • • • • N channel Logic level Enhancem ent mode Tem perature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints see chapter Technical Inform ation


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    PDF BTS115A C67078-S5004-A2 C67078-S5004-A8

    transistor buz 104

    Abstract: No abstract text available
    Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package


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    PDF O-220 C67078-S1353-A2 transistor buz 104