WLCSP66
Abstract: PI0297 EIA-481-C EIA 481-C WLCSP64 WLCSP underfill WLCSP stencil design comintec onyx32 smd code marking wlcsp 9
Text: PI0297 Package Information Description of WLCSP for microcontrollers and recommendations for use Introduction This document describes the WLCSP wafer level chip size package , and provides recommendation on how to use it. Only WLCSP for microcontrollers are described herein.
|
Original
|
PDF
|
PI0297
WLCSP66
PI0297
EIA-481-C
EIA 481-C
WLCSP64
WLCSP
underfill
WLCSP stencil design
comintec onyx32
smd code marking wlcsp 9
|
TB451
Abstract: intersil standard part marking wlcsp inspection
Text: Technical Brief 451 PCB Assembly Guidelines for Intersil Wafer Level Chip Scale Package Devices Introduction SOLDER BALL: Sn/Ag/Cu There is an industry-wide trend towards using the smallest package possible for a given pin count. This is driven primarily by the handheld products market where the trend towards
|
Original
|
PDF
|
TB451
intersil standard part marking
wlcsp inspection
|
crystal quartz 24mhz
Abstract: MARKING SMD IC CODE 8-pin SILEGO silego greenclk SILEGO 32.768 slg3 Quartz Crystal 32.768KHz Quartz Crystal 32.768KHz low profile 32FERRI NX2016AA
Text: Not for Distribution World’s Smallest Micropower 32.768kHz Portable Media Player Clock General Description Features The SLG3PMP122 uses a 24MHz crystal to provide one 24MHz clock output and one 32.768kHz clock output for portable media player devices. •
|
Original
|
PDF
|
768kHz
SLG3PMP122
24MHz
56mming
100ku/mo.
000-003PMP122-0993
SLG3PMP122
crystal quartz 24mhz
MARKING SMD IC CODE 8-pin
SILEGO
silego greenclk
SILEGO 32.768
slg3
Quartz Crystal 32.768KHz
Quartz Crystal 32.768KHz low profile
32FERRI
NX2016AA
|
EIA standards 783
Abstract: smd diode order marking code stmicroelectronics EIA 481-C bulk id EIA standards 763 EIA 763 IEC-60286-3 WLCSP flip chip WLCSP stencil design st smd diode marking code
Text: AN1235 Application note IPAD 500 µm Flip Chip: package description and recommendations for use Introduction This document provides package and usage recomendation information for 500 µm pitch Flip Chips. For information on 400 µm Flip Chips, see Application note AN2348.
|
Original
|
PDF
|
AN1235
AN2348.
EIA standards 783
smd diode order marking code stmicroelectronics
EIA 481-C
bulk id
EIA standards 763
EIA 763
IEC-60286-3
WLCSP flip chip
WLCSP stencil design
st smd diode marking code
|
AN2348
Abstract: EIA standards 763 EIA 481-C flip chip bga 0,8 mm WLCSP stencil design EIA 763 Service Manual smd rework station WLCSP chip mount WLCSP flip chip BUT12
Text: AN2348 Application note IPAD 400 µm Flip Chip: package description and recommendations for use Introduction This document provides package and usage recomendation information for 400 µm pitch Flip Chips. For information on 500 µm Flip Chips, see Application note AN1235.
|
Original
|
PDF
|
AN2348
AN1235.
AN2348
EIA standards 763
EIA 481-C
flip chip bga 0,8 mm
WLCSP stencil design
EIA 763
Service Manual smd rework station
WLCSP chip mount
WLCSP flip chip
BUT12
|
transistor SMD MOSFET 2033
Abstract: No abstract text available
Text: PCF8883 Capacitive touch/proximity switch with auto-calibration, large voltage operating range, and very low power consumption Rev. 4 — 17 March 2014 Product data sheet 1. General description The integrated circuit PCF8883 is a capacitive touch and proximity switch that uses a
|
Original
|
PDF
|
PCF8883
PCF8883
transistor SMD MOSFET 2033
|
DG3000
Abstract: No abstract text available
Text: Si8429DB Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 11.7 0.042 at VGS = - 2.5 V - 10.7 0.052 at VGS = - 1.8 V - 9.6 0.069 at VGS = - 1.5 V - 8.3 0.098 at VGS = - 1.2 V - 1.02
|
Original
|
PDF
|
Si8429DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
DG3000
|
016b sot-23-5
Abstract: Marking 023A transistor marking 016b TRANSISTOR SMD MARKING CODE p1 MARKING CODE SMD IC sot 23-6 007B smd smd marking 022b R5323K R5323Z marking code EA SMD Transistor
Text: R5323x SERIES 150mA 2ch LDO REGULATOR NO.EA-089-0607 OUTLINE The R5323x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply current, low dropout, and high ripple rejection. Each of these voltage regulator ICs consists of a voltage
|
Original
|
PDF
|
R5323x
150mA
EA-089-0607
02A/B
03A/B
13A/B
15A/B
19A/B
016b sot-23-5
Marking 023A
transistor marking 016b
TRANSISTOR SMD MARKING CODE p1
MARKING CODE SMD IC sot 23-6
007B smd
smd marking 022b
R5323K
R5323Z
marking code EA SMD Transistor
|
SI-8100D
Abstract: si8100 Si8100DB
Text: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si8100DB
2002/95/EC
Si8100DB-T2trademarks
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
SI-8100D
si8100
|
Si8100DB
Abstract: No abstract text available
Text: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si8100DB
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
mark A15 sot-23-6
Abstract: No abstract text available
Text: R5326x SERIES Automatic Mode Shift 2ch 150mA LDO NO.EA-138-061102 OUTLINE The R5326x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, Typ. 5.5µA low supply current, and remarkably improved transient response compared with the conventional low supply current
|
Original
|
PDF
|
R5326x
150mA
EA-138-061102
R5326N002B
R5326N003A
R5326N003B
R5326N004A
R5326N004B
R5326N005A
mark A15 sot-23-6
|
R5323N046B
Abstract: TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE 1v smd code marking wlcsp 9 R5323N047B transistor smd code 404
Text: R5323x SERIES 150mA Dual LDO REGULATOR NO.EA-089-071105 OUTLINE The R5323x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply current, low dropout, and high ripple rejection. Each of these voltage regulator ICs consists of a voltage
|
Original
|
PDF
|
R5323x
150mA
EA-089-071105
equipment323Z023B
R5323Z024B
R5323Z025B
R5323Z026B
R5323Z027B
R5323N046B
TRANSISTOR SMD MARKING CODE p1
TRANSISTOR SMD MARKING CODE 1v
smd code marking wlcsp 9
R5323N047B
transistor smd code 404
|
Untitled
Abstract: No abstract text available
Text: Si8424CDB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 ID (A)a, e RDS(on) () Max. 0.020 at VGS = 4.5 V 10 0.021 at VGS = 2.5 V 9.7 0.023 at VGS = 1.8 V 9.3 0.028 at VGS = 1.5 V 8.4 0.045 at VGS = 1.2 V 5 Qg (Typ.) 25 nC
|
Original
|
PDF
|
Si8424CDB
8424C
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si8439DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () Max. (A)a, e ID 0.025 at VGS = - 4.5 V - 9.2 0.030 at VGS = - 2.5 V - 8.4 0.037 at VGS = - 1.8 V - 7.6 0.061 at VGS = - 1.5 V - 5.9 0.125 at VGS = - 1.2 V
|
Original
|
PDF
|
Si8439DB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
|
|
E 8439
Abstract: smd diode 74a 8439
Text: Si8439DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () Max. (A)a, e ID 0.025 at VGS = - 4.5 V - 9.2 0.030 at VGS = - 2.5 V - 8.4 0.037 at VGS = - 1.8 V - 7.6 0.061 at VGS = - 1.5 V - 5.9 0.125 at VGS = - 1.2 V
|
Original
|
PDF
|
Si8439DB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
E 8439
smd diode 74a
8439
|
st micro electronics top marking
Abstract: WLCSP stencil design st smd diode marking code smd diode order marking code stmicroelectronics VIA Technology st micro marking
Text: ESDAXLC4-1BF3 Single line extra low capacitance TVS Features • Stand-off voltage 3 V ■ Ultra low capacitance 0.3 pF on a wide frequency spectrum, 200 to 3000 MHz ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.36 mm max
|
Original
|
PDF
|
|
R5326XXXXA
Abstract: r5326n001a R5326N R5326N006A grm219b31a SOT-23-6 marking 633 SOT-23-6 marking .633
Text: R5326x SERIES Automatic Mode Shift 2ch 150mA LDO NO.EA-138-070409 OUTLINE The R5326x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, Typ. 5.5µA low supply current, and remarkably improved transient response compared with the conventional low supply current
|
Original
|
PDF
|
R5326x
150mA
EA-138-070409
ME-R5326Z-0608
R5326Z
R5326Z001A
R5326Z002A
R5326Z003A
R5326Z004A
R5326XXXXA
r5326n001a
R5326N
R5326N006A
grm219b31a
SOT-23-6 marking 633
SOT-23-6 marking .633
|
AEC-Q100
Abstract: PCF8576D TQFP64 TSSOP56 smd diode marking s30
Text: PCF8576D Universal LCD driver for low multiplex rates Rev. 08 — 19 March 2009 Product data sheet 1. General description The PCF8576D is a peripheral device which interfaces to almost any Liquid Crystal Display LCD with low multiplex rates. It generates the drive signals for any static or
|
Original
|
PDF
|
PCF8576D
PCF8576D
AEC-Q100
TQFP64
TSSOP56
smd diode marking s30
|
Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si8902EDB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si8901EDB
8901E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si8901EDB
8901E
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si8902EDB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance
|
Original
|
PDF
|
Si8904EDB
8904E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier
|
Original
|
PDF
|
Si8900EDB
8900E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
