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    MSM511665-10

    Abstract: MSM511665-80
    Text: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the SM511665 is OKI's CMOS silicon gate process technology.


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    PDF b724240 MSM511665 536-WORD 16-BIT MSM511665 W15/I015 Lj7BM240 MSM511665' VOH-W15/1015 MSM511665-10 MSM511665-80

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    Abstract: No abstract text available
    Text: O K I semiconductor SM511665_ 65,536-WORD x 16-BIT DYNAMIC RAM GENERAL DESCRIPTION T he M S M 5 1 1665 is a new ge neration dynam ic RAM organized as 65,536 w ords x 16 bits. The tech nolog y used to fabricate the M S M 5 1 1665 is O KI's C M O S silicon gate process technology.


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    PDF MSM511665_ 536-WORD 16-BIT MSM511665â MSM511665" MSM511665 W15/1015

    transistor w16

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 11665A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WRITE PER BIT DESCRIPTION The SM511665A/AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology.


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    PDF MSM511665A/AL 536-Word 16-Bit MSM511665A/ 16-bit. MSM511664A/AL cycles/32ms transistor w16