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    SKM 40 GD 121 Search Results

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    SKM 75 Gb 124 IGBT

    Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
    Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON


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    skm 152 ga

    Abstract: Semitrans M SKD 100 GAL semikron skt 40/12 semikron skkt 15/12 semikron 14 MD skm 200 gb 122 d semikron skm 152 ga semikron skkd 15/12 SKN 170 semikron skkt 132/ 14/ E
    Text: SEMIBOX Standard Packing Units Component Types Standard Packing Unit Content Box Dimensions Weight compo- accesnents sories 1 mm x mm x mm kg 1. SEMIPACK Thyristor/Diode Modules SEMIPACK 0 SEMIPACK 1 SEMIPACK 2 SEMIPACK 3 SEMIPACK 4 SEMIPACK 5 SKKD 15; SKKE 15; SKKH 15;


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    SKM 40 GD 121 D

    Abstract: SKM 40 GD 101 D skm 40 gd 121 skm 200 gb 122 d skm 75 gb 101 d skm 150 gb 122 SKM 25 GD IGBT cross reference semikron skm 40 gd 121 SKM 300 GA 102 D Semitrans M SKm 100 ga 121 d
    Text:  6 0,75$16Š ,*%7 0RGXOHV ,QVXODWHG *DWH %LSRODU 7UDQVLVWRU 0RGXOHV HDWXUHV 7\SLFDO $SSOLFDWLRQV ‡ 026 LQSXW YROWDJH FRQWUROOHG ‡ )UHTXHQF\ FRQYHUWHUV IRU $& PRWRU GULYHV ‡ 1 FKDQQHO ‡ '& VHUYR DQG URERW GULYHV ‡ /RZ VDWXUDWLRQ YROWDJH VHULHV DYDLODEOH


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    PDF 1371RQ SKM 40 GD 121 D SKM 40 GD 101 D skm 40 gd 121 skm 200 gb 122 d skm 75 gb 101 d skm 150 gb 122 SKM 25 GD IGBT cross reference semikron skm 40 gd 121 SKM 300 GA 102 D Semitrans M SKm 100 ga 121 d

    Wacker Silicones p12

    Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note
    Text: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available


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    SKiip 83 EC 125 T1

    Abstract: SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1 SKiiP 24 NAB 063 T12 skiip 83 ac 128 BUZ78 equivalent SKIIP 81 AC 12 I T1
    Text: 0 Betriebsweise von Leistungshalbleitern Betriebsweise von Leistungshalbleitern 0.1 Elementare Schaltvorgänge Leistungshalbleiter arbeiten bis auf wenige Sonderanwendungen im Schalterbetrieb. Daraus resultieren grundlegende Prinzipien und Funktionsweisen, die in allen leistungselektronischen


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    SKM 22 GD 101 D

    Abstract: SKM 40 GD 101 D SKM 15 GD 100 D SKM 40 GD 121 D FS403 skm 40 gd 121
    Text: se MIKRO n Absolute Maximum Ratings Symbol Conditions 1 Values . 101 D I . 121 D 1000 1000 V cES = 20 kQ 1 case = 25/80 °C Tease = 25/80 °C R ge VcGR lc ICM per IGBT, Tease = 25 °C jH — C /5I CQ Visol humidity climate 1200 1200 22/15 44/30 ±20 150


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    Untitled

    Abstract: No abstract text available
    Text: fll3bb71 G003b54 5ET S1E D SEMIKRON SEMIKRON INC Absolute Maximum Ratings Symbol Values . 101 D 121 D Conditions ' VcES lc R g e = 20 k n T case = 2 5 /8 0 ICM T case = 2 5 /8 0 VcGR per Visol AC, 1 min DIN 4 0 0 4 0 DIN IEC 6 8 1200 V 1000 1200 V °C °C


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    PDF fll3bb71 G003b54 fil3btj71 B6-94

    Untitled

    Abstract: No abstract text available
    Text: SIE D • Ö13bb71 DD03b3ö 3flb « S E K G SEMIKRON S E M I K R O N INC Absolute Maximum Ratings Symbol Conditions1 VcES VcGR lc Rge = 20 k f l Values .121 D . 101 D 1000 1000 V ges Ptot T], Tstg Visoi per IGBT, Tease = 25 °C AC, 1 min humidity DIN 40 040


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    PDF 13bb71 DD03b3Ã fll3bb71 QGD3b45 T-39-31 SKM22GD101 SKM22GD121

    SKM 40 GD 101 D

    Abstract: SKM 40 GD 121 D skm 40 gd 121 SKM 15 GD 100 D SKM40 B 688 MEEHAN SKM 22 GD 101 D SKM40GD121
    Text: 5EMIKRDN Absolute Maximum Ratings Symbol V ce S VcGR lc ICM V ges Values Conditions ' . 101 D 1000 1000 Rge = 20 k f i Tcase — 25 /80 C T case = 25 /80 =C AC, 1 min humidity climate D IN 40 040 DIN I EC 6 8 T .1 1200 1200 4 0 /2 5 80 /50 ±20 300 - 5 5 . .+150


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    PDF SKM40 SKM 40 GD 101 D SKM 40 GD 121 D skm 40 gd 121 SKM 15 GD 100 D B 688 MEEHAN SKM 22 GD 101 D SKM40GD121

    SKHI 20

    Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
    Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200


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