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    SIS447DN Price and Stock

    Vishay Siliconix SIS447DN-T1-GE3

    MOSFET P-CH 20V 18A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIS447DN-T1-GE3 Cut Tape 3,720 1
    • 1 $1.32
    • 10 $0.83
    • 100 $1.32
    • 1000 $0.38883
    • 10000 $0.38883
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    SIS447DN-T1-GE3 Digi-Reel 3,720 1
    • 1 $1.32
    • 10 $0.83
    • 100 $1.32
    • 1000 $0.38883
    • 10000 $0.38883
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    SIS447DN-T1-GE3 Reel 3,000 3,000
    • 1 -
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    • 10000 $0.33943
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    Vishay Intertechnologies SIS447DN-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIS447DN-T1-GE3)
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    Avnet Americas SIS447DN-T1-GE3 Reel 12,000 18 Weeks 3,000
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    • 10000 $0.27966
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    Mouser Electronics SIS447DN-T1-GE3 14,509
    • 1 $0.53
    • 10 $0.522
    • 100 $0.437
    • 1000 $0.357
    • 10000 $0.295
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    Verical SIS447DN-T1-GE3 11,206 19
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    • 100 $0.3168
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    Arrow Electronics SIS447DN-T1-GE3 Cut Strips 11,206 18 Weeks 1
    • 1 $0.3197
    • 10 $0.3194
    • 100 $0.3184
    • 1000 $0.3175
    • 10000 $0.3168
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    Newark SIS447DN-T1-GE3 Reel 12,000 3,000
    • 1 $0.416
    • 10 $0.416
    • 100 $0.416
    • 1000 $0.416
    • 10000 $0.376
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    SIS447DN-T1-GE3 Cut Tape 11,895 1
    • 1 $1.15
    • 10 $1.15
    • 100 $0.549
    • 1000 $0.318
    • 10000 $0.282
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    SIS447DN-T1-GE3 Reel 6,000
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    • 10000 $0.376
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    TTI SIS447DN-T1-GE3 Reel 6,000
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    • 10000 $0.307
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    TME SIS447DN-T1-GE3 1
    • 1 $0.766
    • 10 $0.591
    • 100 $0.469
    • 1000 $0.437
    • 10000 $0.437
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    Avnet Asia SIS447DN-T1-GE3 20 Weeks 3,000
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    EBV Elektronik SIS447DN-T1-GE3 19 Weeks 3,000
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    Vishay Huntington SIS447DN-T1-GE3

    MOSFET P-CH 20V 18A PPAK1212-8
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    Win Source Electronics SIS447DN-T1-GE3 30,000
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    • 100 $0.606
    • 1000 $0.4692
    • 10000 $0.4692
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    SIS447DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS447DN-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 18A POWERPAK1212 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SiS447DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () Max. ID (A) 0.0071 at VGS = -10 V -18 a 0.0090 at VGS = -4.5 V -18 a 0.0125 at VGS = -2.5 V -18 a Qg (Typ.) 57.5 nC • TrenchFET Gen III P-Channel power MOSFET


    Original     		PDF SiS447DN SiS447DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS447DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiS447DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS447DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () Max. ID (A) 0.0071 at VGS = -10 V -18 a 0.0090 at VGS = -4.5 V -18 a 0.0125 at VGS = -2.5 V -18 a Qg (Typ.) 57.5 nC • TrenchFET Gen III P-Channel power MOSFET


    Original     		PDF SiS447DN SiS447DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12