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    SIR882ADP Price and Stock

    Vishay Siliconix SIR882ADP-T1-GE3

    MOSFET N-CH 100V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR882ADP-T1-GE3 Reel 9,000 3,000
    • 1 -
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    • 10000 $1.0125
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    Vishay Intertechnologies SIR882ADP-T1-GE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIR882ADP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR882ADP-T1-GE3 Reel 3,000 27 Weeks 3,000
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    • 10000 $0.99631
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    SIR882ADP-T1-GE3 Ammo Pack 18 Weeks, 3 Days 1
    • 1 $2.41
    • 10 $1.97
    • 100 $1.6
    • 1000 $1.6
    • 10000 $1.6
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    Mouser Electronics SIR882ADP-T1-GE3 15,210
    • 1 $2.86
    • 10 $1.94
    • 100 $1.42
    • 1000 $1.1
    • 10000 $1.01
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    Newark SIR882ADP-T1-GE3 Cut Tape 20,988 1
    • 1 $2.41
    • 10 $1.97
    • 100 $1.6
    • 1000 $1.54
    • 10000 $1.54
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    SIR882ADP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.04
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    TTI SIR882ADP-T1-GE3 Reel 18,000 3,000
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    • 1000 -
    • 10000 $1.05
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    SIR882ADP-T1-GE3 Cut Tape 2,230 10
    • 1 -
    • 10 $1.67
    • 100 $1.67
    • 1000 $1.67
    • 10000 $1.67
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    TME SIR882ADP-T1-GE3 1
    • 1 $2.24
    • 10 $1.86
    • 100 $1.42
    • 1000 $1.19
    • 10000 $1.19
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    Avnet Asia SIR882ADP-T1-GE3 28 Weeks 3,000
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    EBV Elektronik SIR882ADP-T1-GE3 27 Weeks 3,000
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    Vishay Huntington SIR882ADP-T1-GE3

    MOSFET N-CH 100V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIR882ADP-T1-GE3 55,030
    • 1 -
    • 10 -
    • 100 $1.9787
    • 1000 $1.6961
    • 10000 $1.6961
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    SIR882ADP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR882ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A POWERPAK Original PDF

    SIR882ADP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sir882a

    Abstract: No abstract text available
    Text: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR882ADP 11-Mar-11 sir882a

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR882ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiR882ADP

    Abstract: No abstract text available
    Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 11-Mar-11

    SiR882ADP

    Abstract: MV 1662
    Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 11-Mar-11 MV 1662

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 VDS (V) 100 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    sir882adp

    Abstract: No abstract text available
    Text: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiR882ADP 2002/95/EC SiR882ADP-T1-GE3 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    so8 footprint

    Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		PDF SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419

    Untitled

    Abstract: No abstract text available
    Text: designfeature SANJAY HAVANUR, Senior Manager, System Applications Vishay Siliconix, Santa Clara, CA Optimum Dead Time Selection in ZVS Topologies Insufficient dead time during turn off can result in the loss of ZVS, poor efficiency, and in the worst case, failure of the


    Original     		PDF SIR882ADP

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		PDF SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN845 Matching System Dead Time to MOSFET Parameters in ZVS Circuits by Sanjay Havanur Medium- and high-voltage power MOSFETs are used in a variety of isolated converter topologies, such as half- or full-bridges


    Original     		PDF AN845 06-Oct-14