Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SILICON THERMAL GREASE Search Results

    SILICON THERMAL GREASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    SILICON THERMAL GREASE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Dow Corning 340

    Abstract: Dow Corning Dow Corning d 340 DOW 340 heat sink compound 340 Heat Sink Compound Semco cartridge AGP5223 D 217 dow corning silicone compound
    Text: Product Information Silicon-Based Compounds Dow Corning 340 Heat Sink Compound FEATURES • High thermal conductivity • Low bleed • Stable at high temperatures COMPOSITION • Greaselike silicone fluid thickened with metal oxide filler Compound provides thermal coupling of electrical/electronic


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: THERMAL PERFORMANCE OF AN ELLIPTICAL PIN FIN HEAT SINK Christopher L. Chapman, and Seri Lee Aavid Engineering, Inc. Laconia, New Hampshire 03247 Bill L. Schmidt Silicon Graphics Computer Systems Mountainview, California 94039 L m Abstract Comparative thermal tests have been carried out using


    Original     		PDF

    DIM150PSM45-F000

    Abstract: No abstract text available
    Text: Preliminary Information DIM150PSM45-F000 Single Switch IGBT Module DS5956.1 January 2010 LN26978 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated AlSiC Base with AlN Substrates KEY PARAMETERS VCES


    Original     		PDF DIM150PSM45-F000 DS5956 LN26978) DIM150PSM45-F000

    microcontroller base rectifier using scr

    Abstract: AN10384 TRIAC power control circuit full wave triac speed controller TO92 triac how to calculate junction to ambient thermal resistance Triac application note drill motor speed control circuit refrigerator thermostat to220 mica
    Text: AN10384 Triacs: How to calculate power and predict Tjmax Rev. 01 — 10 August 2005 Application note Document information Info Content Keywords Triac, Silicon Controlled Rectifier, power, thermal resistance, heatsink, Tjmax, knee voltage, slope resistance


    Original     		PDF AN10384 microcontroller base rectifier using scr AN10384 TRIAC power control circuit full wave triac speed controller TO92 triac how to calculate junction to ambient thermal resistance Triac application note drill motor speed control circuit refrigerator thermostat to220 mica

    bi-directional switches IGBT

    Abstract: dim400xsm65 ge traction motor DIM400XSM65-K000
    Text: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.3 June 2007 LN25453 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates APPLICATIONS • High Reliability Inverters • Motor Controllers


    Original     		PDF DIM400XSM65-K000 DS5808-1 LN25453) DIM400XSM65-K000 bi-directional switches IGBT dim400xsm65 ge traction motor

    DIM800FSM17-A000

    Abstract: LIN26325
    Text: DIM800FSM17-A000 Single Switch IGBT Module DS5461-3.2 August 2008 LIN26325 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES


    Original     		PDF DIM800FSM17-A000 DS5461-3 LIN26325) DIM800FSM17-A000 LIN26325

    DIM1200FSM12-A000

    Abstract: LIN26322
    Text: DIM1200FSM12-A000 Single Switch IGBT Module DS5547-3.1 August 2008 LIN26322 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES


    Original     		PDF DIM1200FSM12-A000 DS5547-3 LIN26322) DIM1200FSM12-A000 LIN26322

    DIM1600FSM12-A000

    Abstract: LIN26324
    Text: DIM1600FSM12-A000 Single Switch IGBT Module DS5533-3.1 August 2008 LIN26324 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES


    Original     		PDF DIM1600FSM12-A000 DS5533-3 LIN26324) DIM1600FSM12-A000 LIN26324

    bi-directional switches IGBT

    Abstract: DIM800FSM12-A000 LIN26320 lin26
    Text: DIM800FSM12-A000 Single Switch IGBT Module DS5531-3.1 August 2008 LIN26320 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES


    Original     		PDF DIM800FSM12-A000 DS5531-3 LIN26320) bi-directional switches IGBT DIM800FSM12-A000 LIN26320 lin26

    Untitled

    Abstract: No abstract text available
    Text: 1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, Stud Version 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and


    Original     		PDF 1N3208 DO-203AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    DIM1200FSM12-A000

    Abstract: IC LM 723 2764-3 DS5547-1
    Text: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Preliminary Information DS5547-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM1200FSM12-A000 DS5547-1 DIM1200FSM12-A000 IC LM 723 2764-3

    AN4502

    Abstract: AN4503 GP1200ESM33 DS5308-1
    Text: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001


    Original     		PDF GP1200ESM33 DS5308-1 DS5308-2 GP1200ESM33 AN4502 AN4503

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v
    Text: GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES • High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF GP800DDM12 DS5291-1 DS5291-2 AN4502 AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v

    mj 13005

    Abstract: DIM100XCM65-F000 DIM200XCM65-F000 6500V VCES 6500V
    Text: Preliminary information DIM100XCM65-F000 IGBT Chopper Module DS5957-1 January 2010 LN26983 FEATURES KEY PARAMETERS • High Thermal Cycling Capability  Soft Punch Through Silicon  Isolated AlSiC Base with AlN Substrates VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM100XCM65-F000 DS5957-1 LN26983) 240ty mj 13005 DIM100XCM65-F000 DIM200XCM65-F000 6500V VCES 6500V

    Untitled

    Abstract: No abstract text available
    Text: DIM1200FSM17-A000 DIM1200FSM17-A000 Single Switch IGBT Module Preliminary Information DS5456-1.1 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM1200FSM17-A000 DS5456-1 DIM1200FSM17-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM2400ESM17-A000 DIM2400ESM17-A000 Single Switch IGBT Module Preliminary Information DS5447-2.0 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM2400ESM17-A000 DS5447-2 DIM2400ESM17-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces February 2003, version DS5492-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM1200ESM33-A000 DS5492-5 DS5492-6 DIM1200ESM33y

    Untitled

    Abstract: No abstract text available
    Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Preliminary Information DS5455-1.1 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM1600FSM17-A000 DS5455-1 DIM1600FSM17-A000

    LM 13500

    Abstract: DIM2400ESM12-A000
    Text: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Preliminary Information DS5529-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM2400ESM12-A000 DS5529-1 LM 13500 DIM2400ESM12-A000

    NTE5371

    Abstract: NTE5372 NTE537
    Text: NTE5371 & NTE5372 Silicon Controlled Rectifier SCR for High Speed Switching 125 Amp, TO94 Features: D All Diffused Design D Center Amplifying Gate D High Surge Current Capability D Low Thermal Impedance D High Speed Performance Applications: D Inverters


    Original     		PDF NTE5371 NTE5372 195K/W 08K/W NTE5371 NTE5372 NTE537

    Untitled

    Abstract: No abstract text available
    Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces February 2003, version DS5492-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM1200ESM33-A000 DS5492-5 DS5492-6 DIM1200ESM33y

    DIM1800ESM12-A000

    Abstract: No abstract text available
    Text: DIM1800ESM12-A000 DIM1800ESM12-A000 Single Switch IGBT Module Preliminary Information DS5529-1.3 April 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM1800ESM12-A000 DS5529-1 DIM1800ESM12-A000

    DIM1600FSM12-A000

    Abstract: No abstract text available
    Text: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Preliminary Information DS5533-1.2 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM1600FSM12-A000 DS5533-1 DIM1600FSM12-A000

    AN4505

    Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
    Text: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF GP800DDM18 DS5364-2 DS5364-3 3300y AN4505 GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram