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    SILICON POWER J377 Search Results

    SILICON POWER J377 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    SILICON POWER J377 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    J377

    Abstract: j377 datasheet 2SJ377 silicon power J377 transistor j377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


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    2SJ377 J377 j377 datasheet 2SJ377 silicon power J377 transistor j377 PDF

    J377

    Abstract: 2SJ377 j377 datasheet silicon power J377 transistor j377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance


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    2SJ377 J377 2SJ377 j377 datasheet silicon power J377 transistor j377 PDF

    J377

    Abstract: 2sj377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance


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    2SJ377 J377 2sj377 PDF

    J377

    Abstract: silicon power J377 2SJ377 transistor j377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance


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    2SJ377 J377 silicon power J377 2SJ377 transistor j377 PDF

    2SJ377

    Abstract: J377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : |Yfs| = 4.0 S (typ.) 5.5 ± 0.2 : RDS (ON) = 0.16 Ω (typ.)


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    2SJ377 2SJ377 J377 PDF

    J377

    Abstract: 2SJ377
    Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


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    2SJ377 J377 2SJ377 PDF

    ISP2312

    Abstract: prestonia IPMB Address B0903 sectionneur N82802A circuit diagram of moving LED message display sms Standard BIOS 32-Bit Service Directory Proposal 27376 intel xeon prestonia
    Text: Intel NetStructure MPCBL0001 High-Performance Single Board Computer Technical Product Specification April 2005 Order Number: 273817-006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


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    MPCBL0001 ISP2312 prestonia IPMB Address B0903 sectionneur N82802A circuit diagram of moving LED message display sms Standard BIOS 32-Bit Service Directory Proposal 27376 intel xeon prestonia PDF

    LPC 836 red laser diode

    Abstract: IPMB Address JTAG amibios CONNECTOR intel 8351 dimm mtbf intel 8259 interrupt controller intel desktop board canada ices 003 HER 103 diode prestonia Pentium III XeonTM Processor Bus Terminator Des
    Text: Intel NetStructure MPCBL0001 High Performance Single Board Computer Technical Product Specification October 2007 Order Number: 273817-011 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR


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    MPCBL0001 LPC 836 red laser diode IPMB Address JTAG amibios CONNECTOR intel 8351 dimm mtbf intel 8259 interrupt controller intel desktop board canada ices 003 HER 103 diode prestonia Pentium III XeonTM Processor Bus Terminator Des PDF

    sharp cp 7700 speaker

    Abstract: dimmer LED ford eec V 61H01
    Text: Lighting Systems Catalog Grote: A Worldwide Leader in Vehicle Lighting and Safety Systems Echoing our growing proportion of international business, Grote has transitioned from a North American-based international to a true multi-national organization. Grote’s Madison, Indiana facility is our international


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    D-94559 sharp cp 7700 speaker dimmer LED ford eec V 61H01 PDF

    MJ3771

    Abstract: MJ3773 MJ6257 MJ6302 MJ6700 MJ6701 ADC 808
    Text: MJ6257 SILICON For Specifications, See MJ3771 Data. MJ6302 (silicon) For Specifications, See M J3773 Data. MJ6700,MJ6701 (SILICON) 7 AMPERE POWER TRANSISTORS PNP SILICON M EDIUM-POW ER PNP SILICON TRANSISTORS . . . designed for switching and wide-band amplifier applications.


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    MJ6257 MJ3771 MJ6302 MJ3773 MJ6700 MJ6701 MJ6701 MJ6257 MJ6302 ADC 808 PDF

    J377

    Abstract: MJ3771 MJ3772 TCA 875 AN-415 MJ6257 MSD6100 NIJ3771
    Text: MJ3771, MJ3772, MJ6257 SILICON 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON HIGH POWER NPN SILICO N POWER TRAN SISTO RS 40 and 60 VOLTS 200 WATTS Select from Epibase transistors for ultimate circuit performance based on the design requirements. E P IB A S E - Designed fo r power am plifier and switching applications.


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    MJ3771, MJ3772, MJ6257 NIJ3771 MJ3772 MJ3771 MJ3772 MJ6257 J377 TCA 875 AN-415 MSD6100 NIJ3771 PDF

    MJ3773

    Abstract: AN-415 MJ6302
    Text: MJ3773, MJ6302 SILICON 16 AM PERE POWER TR A N SISTO R S HIGH POWER NPN SILICO N POWER TRA N SISTO R S Hpibase transistors for ultimate circu it performance based on the designer's requirement. E P IB A S E NPN SILICO N 120, 140 V O L T S 200 W ATTS — designed for power am plifier and switching


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    MJ3773, MJ6302 MJ3773 MJ6302 MJ3773 I--55 AN-415 PDF

    BD368

    Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
    Text: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0


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    MJ4034 MJ4031 BD317 BD318 2N5629 2N6029 MJ4035 MJ4032 2N5630 2l\l6030 BD368 MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5631 PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor PDF

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902 PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


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    PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF