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    SILICON PNP POWER TRANSISTOR Search Results

    SILICON PNP POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON PNP POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJE350

    Abstract: No abstract text available
    Text: ON Semiconductort MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON


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    PDF MJE350 r14525 MJE350/D MJE350

    MJE350

    Abstract: No abstract text available
    Text: ON Semiconductor MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON


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    PDF MJE350 r14525 MJE350/D MJE350

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON


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    PDF MJE350

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL  DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier.  APPLICATION * Low frequency power amplifier


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    PDF 2SB647 2SB647 2SB647L-x-T9N-B 2SB647G-x-T9N-B 2SB647L-x-T9N-K 2SB647G-x-T9N-K O-92NL QW-R211-010

    insulator nec

    Abstract: 2sb772 nec 2SB772 all ic books in transistor 3569
    Text: DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


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    PDF 2SB772 2SB772 insulator nec 2sb772 nec all ic books in transistor 3569

    2SB772 by Nec

    Abstract: 2SB772 Nec 2SB772
    Text: DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR PACKAGE DRAWING Unit: mm DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


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    PDF 2SB772 2SB772 2SB772 by Nec 2SB772 Nec

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1620 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON POWER TRANSISTOR  DESCRIPTION The UTC UP1620 is a silicon PNP silicon power transistor, it uses UTC’s advanced technology to provide the customers with high collector-emitter breakdown voltage and ultra-high DC current


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    PDF UP1620 UP1620 UP1620L-x-T3P-T UP1620G-x-T3P-T QW-R214-025

    d1117

    Abstract: TRANSISTOR 2202 BL 2SA1988 C10535E C10943X MEI-1202 MP-88
    Text: DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V


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    PDF 2SA1988 2SA1988 MP-88 d1117 TRANSISTOR 2202 BL C10535E C10943X MEI-1202 MP-88

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


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    PDF MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108

    BD234

    Abstract: PNP POWER TRANSISTOR SOT-32
    Text: BD234 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon Epitaxial-Base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.


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    PDF BD234 BD234 OT-32 OT-32 PNP POWER TRANSISTOR SOT-32

    d1117

    Abstract: D111 2SA1988 MP-88
    Text: DATA SHEET Silicon Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. FEATURES • High Voltage VCEO = –200 V • DC Current Gain hFE = 70 to 200


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    PDF 2SA1988 2SA1988 MP-88 d1117 D111 MP-88

    2sB101

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. „ FEATURES * Low base drive


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    PDF 2SB1017 2SB1017 2SB1017L-x-TF3-T 2SB1017G-x-TF3-T 2SB1017L-x-TF3-T O-220F QW-R219-010 2sB101

    PNP Transistors

    Abstract: No abstract text available
    Text: 40362L High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40362L VCEV hFE 35 IC Notes VCEO 70 hFE A .05 COB Polarity PNP ICEV Power Dissipation


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    PDF 40362L 40362L O-205AD/TO-39 07-Sep-2010 PNP Transistors

    BD234

    Abstract: SGS-Thomson
    Text: BD234 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 3


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    PDF BD234 BD234 OT-32 OT-32 SGS-Thomson

    MJL3281A MJL1302A

    Abstract: positioner MJL1302A MJL3281A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


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    PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A positioner complementary npn-pnp power transistors

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


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    PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors

    40394

    Abstract: PNP Transistors MD14
    Text: 40394 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40394 VCEV 60 hFE 15 IC .15 Notes VCEO 40 hFE A .001 COB Polarity PNP ICEV Power Dissipation


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    PDF 07-Sep-2010 40394 PNP Transistors MD14

    BCP68

    Abstract: BCP69T1 BCP69T3
    Text: ON Semiconductort BCP69T1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


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    PDF BCP69T1 OT-223 BCP69T1/D BCP68 BCP69T1 BCP69T3

    Untitled

    Abstract: No abstract text available
    Text: ?M VE5 MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 VOLTS .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability. •


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    PDF MJEC350 3kA/10kA/10kA

    Untitled

    Abstract: No abstract text available
    Text: ftnasr Back to Bipolar Power Transistors MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 V O L T S .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP


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    PDF 3kA/10kA/10kA

    40X40

    Abstract: MJEC350
    Text: ÍJhN BF MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 V O L T S .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability.


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    PDF MJEC350 VEB-30Vdc. lc-01 40X40

    JE350

    Abstract: je 350
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.


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    PDF MJE350 O-22SAA JE350 je 350

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD 234 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and


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    PDF BD234 OT-32 BD234 OT-32 O-126)

    MJE105

    Abstract: MJE205 MJE105K MJE205K CASE 90-05
    Text: MJE105 SILICON MJE105K MEDIUM-POWER PNP SILICON TRANSISTORS 5 AMPERE POWER TRANSISTORS . . . for use as an output device in complementary audio amplifiers up to 20-Watts music power per channel. PNP SILICON • High DC Current Gain - hFE = 25-100 @ lc = 2.0 A


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    PDF MJE105 MJE105K 20-Watts MJE205, MJE205K -MJE105- MJE105 MJE205 MJE105K MJE205K CASE 90-05