MJE350
Abstract: No abstract text available
Text: ON Semiconductort MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON
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MJE350
r14525
MJE350/D
MJE350
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MJE350
Abstract: No abstract text available
Text: ON Semiconductor MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON
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MJE350
r14525
MJE350/D
MJE350
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Untitled
Abstract: No abstract text available
Text: ON Semiconductor MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON
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MJE350
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier. APPLICATION * Low frequency power amplifier
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2SB647
2SB647
2SB647L-x-T9N-B
2SB647G-x-T9N-B
2SB647L-x-T9N-K
2SB647G-x-T9N-K
O-92NL
QW-R211-010
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insulator nec
Abstract: 2sb772 nec 2SB772 all ic books in transistor 3569
Text: DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.
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2SB772
2SB772
insulator nec
2sb772 nec
all ic books in
transistor 3569
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2SB772 by Nec
Abstract: 2SB772 Nec 2SB772
Text: DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR PACKAGE DRAWING Unit: mm DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.
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2SB772
2SB772
2SB772 by Nec
2SB772 Nec
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP1620 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON POWER TRANSISTOR DESCRIPTION The UTC UP1620 is a silicon PNP silicon power transistor, it uses UTC’s advanced technology to provide the customers with high collector-emitter breakdown voltage and ultra-high DC current
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UP1620
UP1620
UP1620L-x-T3P-T
UP1620G-x-T3P-T
QW-R214-025
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d1117
Abstract: TRANSISTOR 2202 BL 2SA1988 C10535E C10943X MEI-1202 MP-88
Text: DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V
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2SA1988
2SA1988
MP-88
d1117
TRANSISTOR 2202 BL
C10535E
C10943X
MEI-1202
MP-88
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2SC1419
Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.
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MJE350
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2SC1419
TIP54
MJ1000
MJ15024 MJ15025
2SC1943
SE9302
MJE2482
2SD675
BU326
BU108
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BD234
Abstract: PNP POWER TRANSISTOR SOT-32
Text: BD234 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon Epitaxial-Base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.
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BD234
BD234
OT-32
OT-32
PNP POWER TRANSISTOR SOT-32
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d1117
Abstract: D111 2SA1988 MP-88
Text: DATA SHEET Silicon Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. FEATURES • High Voltage VCEO = –200 V • DC Current Gain hFE = 70 to 200
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2SA1988
2SA1988
MP-88
d1117
D111
MP-88
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2sB101
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive
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2SB1017
2SB1017
2SB1017L-x-TF3-T
2SB1017G-x-TF3-T
2SB1017L-x-TF3-T
O-220F
QW-R219-010
2sB101
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PNP Transistors
Abstract: No abstract text available
Text: 40362L High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40362L VCEV hFE 35 IC Notes VCEO 70 hFE A .05 COB Polarity PNP ICEV Power Dissipation
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40362L
40362L
O-205AD/TO-39
07-Sep-2010
PNP Transistors
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BD234
Abstract: SGS-Thomson
Text: BD234 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 3
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BD234
BD234
OT-32
OT-32
SGS-Thomson
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MJL3281A MJL1302A
Abstract: positioner MJL1302A MJL3281A complementary npn-pnp power transistors
Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors
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MJL3281A*
MJL1302A*
MJL3281A
MJL1302A
r14525
MJL3281A/D
MJL3281A MJL1302A
positioner
complementary npn-pnp power transistors
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MJL3281A MJL1302A
Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors
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MJL3281A*
MJL1302A*
MJL3281A
MJL1302A
r14525
MJL3281A/D
MJL3281A MJL1302A
MJL3281A-D
complementary npn-pnp power transistors
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40394
Abstract: PNP Transistors MD14
Text: 40394 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40394 VCEV 60 hFE 15 IC .15 Notes VCEO 40 hFE A .001 COB Polarity PNP ICEV Power Dissipation
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07-Sep-2010
40394
PNP Transistors
MD14
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BCP68
Abstract: BCP69T1 BCP69T3
Text: ON Semiconductort BCP69T1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the
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BCP69T1
OT-223
BCP69T1/D
BCP68
BCP69T1
BCP69T3
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Untitled
Abstract: No abstract text available
Text: ?M VE5 MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 VOLTS .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability. •
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MJEC350
3kA/10kA/10kA
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Untitled
Abstract: No abstract text available
Text: ftnasr Back to Bipolar Power Transistors MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 V O L T S .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP
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3kA/10kA/10kA
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40X40
Abstract: MJEC350
Text: ÍJhN BF MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 V O L T S .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability.
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MJEC350
VEB-30Vdc.
lc-01
40X40
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JE350
Abstract: je 350
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
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MJE350
O-22SAA
JE350
je 350
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD 234 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and
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BD234
OT-32
BD234
OT-32
O-126)
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MJE105
Abstract: MJE205 MJE105K MJE205K CASE 90-05
Text: MJE105 SILICON MJE105K MEDIUM-POWER PNP SILICON TRANSISTORS 5 AMPERE POWER TRANSISTORS . . . for use as an output device in complementary audio amplifiers up to 20-Watts music power per channel. PNP SILICON • High DC Current Gain - hFE = 25-100 @ lc = 2.0 A
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MJE105
MJE105K
20-Watts
MJE205,
MJE205K
-MJE105-
MJE105
MJE205
MJE105K
MJE205K
CASE 90-05
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